Abstract: Provided herein as a steerable surgical robotic system for positioning a catheter comprising a sheath and a guidewire within a patient body, including a sheath driver configured to advance and retract a sheath having a hollow interior along a sheath advance and retract path extending therein, a guidewire driver configured to advance and retract a guidewire along a guidewire advance and retract path extending therein, wherein each of the sheath advance and retract path and the guidewire advance and retract path extend between pairs of rollers in the respective sheath and roller drivers, and the paths are parallel to each another.

Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.

Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

Abstract: The disclosure provides a flexible, narrow medical device (such as a micro-catheter or a guidewire) that is controllably moved and steered through lumens of a body. The medical device may include an electrically-actuatable bendable portion at a distal end, which may be provided by a polymer electrolyte layer, electrodes distributed about the polymer electrolyte layer, and electrical conduits coupled to the electrodes, such that the polymer electrolyte layer deforms asymmetrically in response to an electrical signal through one or more conduits. The disclosure further includes a controller for moving the device into and out of bodily lumens and for applying the electrical signal for steering the device. The device further includes methods of preparing the polymer electrolyte layer in tubular shape.

Abstract: A catheter comprises a hollow sheath, a guidewire extendable through the hollow sheath, where the guidewire comprises a controllably bendable tip portion, a hollow tubular intermediate portion connected to the tip portion, an electrical connection portion connected to the hollow tubular portion, at least a first wire extending through the hollow tubular portion and connected at a first end thereof to a first circumferential conductor and at a second end thereof to a surface of the tip end, and a power supply connector, therein the electrical connection portion is received in the power supply connector and a first terminal in the power supply connector contacts the first circumferential conductor.

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a gate structure on a core-peri region of a substrate. The substrate may further include a cell region. The methods may also include forming a gate spacer on a sidewall of the gate structure, forming a first impurity region adjacent the gate spacer in the core-peri region of the substrate by performing a first ion implantation process, removing the gate spacer, forming a second impurity region in the core-peri region of the substrate between the gate structure and the first impurity region by performing a second ion implantation process, forming a stress film on the gate structure, an upper surface of the first impurity region, and an upper surface of the second impurity region, and forming a recrystallization region by crystallizing the first impurity region and the second impurity region by performing an annealing process.

Abstract: Provided herein as an end effector for a surgical apparatus including a housing having an outer wall and an opening therein, and opposed first and second walls extending along opposite sides of the opening, a first actuator pivotally coupled to the first wall of the housing, a second actuator pivotally coupled to the second wall of the housing, and a coupling disposed within the opening of the housing and between at least a portion of the first and second actuators, the coupling including opposed first and second ends, each end pivotally coupled to a different one of the first and second actuators.

Abstract: Provided herein is a mechanism to controllably move a wire within a flexible tubular member, the wire including opposed wire ends extending outwardly of a proximal end of the flexible tubular member, comprising a drive mechanism and a coupling located between the drive mechanism and the wire end, wherein movement of the coupling in the direction of the wire end results in opposed motion of the wire end.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

Abstract: Provided herein is a surgical instrument comprising a cap having a first and second aperture extending therethrough, a first extendable and retractable member having a distal end coupled to a first coupling, a first arm extending from the first coupling and pivotable with respect to the distal end of the first member, and a second arm connected to the first arm through a second coupling and pivotable, with respect to the first arm, a second extendable and retractable member having a distal end coupled to a third coupling, a third arm extending from the second coupling, the third arm pivotable, with respect to the distal end of the second member, and a fourth arm connected to the third arm through a fourth coupling and pivotable, with respect to the third arm, a first end effector connected to the second arm and a second end effector connected to the fourth arm.

Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.

Abstract: The present invention relates to an elongate, flexible, medical device comprising: an elongate, flexible inner member; a support member extending around the inner member; a plurality of electrically-conductive wires, each being braided with the support member; an outer member; and at least one ionic electroactive polymer actuator, the actuator comprising: at least one polymer electrolyte layer secured adjacent to the distal end of the inner member; and a plurality of electrodes circumferentially distributed about the exterior surface of the at least one polymer electrolyte layer, wherein at least one of the plurality of electrically-conductive wires, adjacent to the distal end thereof, is electrically connected to one of the electrodes, and the at least one polymer electrolyte layer is configured to deform asymmetrically in response to the application of an electrical signal through at least one of the plurality of electrically-conductive wires to at least one of the plurality of electrodes.

Abstract: A medical device includes at least one ionic electroactive polymer actuator, the actuator including at least one polymer electrolyte member defining at least a surface and a plurality of electrodes disposed about the surface of the at least one polymer electrolyte member, an elongate, flexible portion defining a proximal end and a distal end secured adjacent to the ionic electroactive polymer actuator and the elongate, flexible portion further comprising a core and a sleeve surrounding the core and a plurality of electrically-conductive wires, each having a proximal end and a distal end coupled to at least one of the plurality of electrodes, wherein the at least one polymer electrolyte member deforms asymmetrically in response to the application of an electrical potential supplied through at least one of the plurality of electrically-conductive wires to at least one of the plurality of electrodes.

Abstract: Provided herein as an end effector for a surgical apparatus including a housing having an outer wall and an opening therein, and opposed first and second walls extending along opposite sides of the opening, a first actuator pivotally coupled to the first wall of the housing, a second actuator pivotally coupled to the second wall of the housing, and a coupling disposed within the opening of the housing and between at least a portion of the first and second actuators, the coupling including opposed first and second ends, each end pivotally coupled to a different one of the first and second actuators.

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

Abstract: A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.