Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

Abstract: A cover window includes a base layer; a first coating layer on the base layer; and a second coating layer on the first coating layer. The first coating layer directly contacts a first part of an upper surface of the base layer and exposes a second part of the upper surface of the base layer, the upper surface of the base layer consists of the first part and the second part, and the second coating layer directly contacts the second part of the upper surface of the base layer exposed by the first coating layer, and an upper surface of the first coating layer.

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

Abstract: A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

Abstract: A method of manufacturing a window includes providing a base substrate and a protective film each including an upper surface and a lower surface, providing the upper surface of the protective film removably attached to the lower surface of the base substrate, providing a processed base substrate and a processed protective film by removing portions of the base substrate and the protective film to provide an exposed upper surface of the processed protective film which is closer to the lower surface thereof than the upper surface thereof, providing a first surface protection layer on both the upper surface of the processed base substrate and the exposed upper surface of the processed protective film, and providing the processed protective film separated from the processed base substrate to provide the window which is attachable to a display device and includes the processed base substrate having the first surface protection layer.

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

Abstract: A laser crystallization system includes a transfer part that transfers a substrate on which an amorphous silicon thin film is deposited into a chamber, a laser irradiation part that irradiates an excimer laser to the substrate for crystallization of the amorphous silicon thin film in the chamber, a stage that supports the substrate in the chamber, a measuring part that measures a light transmittance value of the substrate, and a controller that controls the laser irradiation part to irradiate the excimer laser to the substrate when the light transmittance value is equal to or lower than a reference transmittance value and controls the laser irradiation part not to irradiate the excimer laser to the substrate when the light transmittance value is higher than the reference transmittance value.

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

Abstract: A display device may include a substrate, a first layer on the substrate, the first layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a second layer on the first layer, an active pattern on the second layer, the active pattern overlapping only the first portion of the first layer, a gate electrode on the active pattern, a source electrode and a drain electrode on the gate electrode and connected to the active pattern, a first electrode connected to one of the source electrode and the drain electrode, a pixel defining layer on the first electrode, the pixel defining layer having an opening portion exposing at least a portion of the first electrode, an emission layer in the opening portion on the first electrode, and a second electrode on the emission layer.

Abstract: A cover window includes a base member which includes a top surface, a bottom surface opposite to the top surface, and a side surface connecting the top surface and the bottom surface to each other, a first hard coating layer on the top surface of the base member, and a protection layer in direct contact with at least a portion of the side surface of the base member.

Abstract: A cover window includes a base layer. A first hard coating layer is disposed on a first side of the base layer. A second hard coating layer is disposed on the first hard coating layer. The first hard coating layer comprises an acryl-based organic-inorganic material and the second hard coating layer comprises a silicon-based or epoxy-based organic-inorganic material or the first hard coating layer comprises the silicon-based or the epoxy-based organic-inorganic material and the second hard coating layer comprises the acryl-based organic-inorganic material.

Abstract: The disclosure relates to a micro lens assembly including: a base; a support inserted into the base to be movable in an optical axis direction; a driver for auto focus adjustment configured to move the support in the optical axis direction; a lens unit inserted into the support to be movable in a direction perpendicular to the optical axis direction and including a lens barrel to which a lens part is coupled; a driver for optical image stabilization configured to move the lens unit in the direction perpendicular to the optical axis direction; a plurality of ball bearings arranged between the support and the base for the support to be movable with respect to the base in the optical axis direction; and a plurality of connection members configured to connect the lens unit and the support to each other for the lens unit to be movable with respect to the support and formed of an elastic nonconductor.

Abstract: An auto focusing apparatus according to the present invention comprises: a base having an accommodation groove; a lens carrier provided in the accommodation groove of the base; a magnet provided on one surface of the lens carrier; a coil provided to the base so as to face the magnet; a main ball accommodation part formed in a corner of one side of the inner surface of the base facing the magnet on the lens carrier; a sub-ball accommodation part which is provided on the inner surface of the base, on which the main ball accommodation part is not formed, and which supports the other surface of the lens carrier, on which the magnet is not provided; a guide protrusion which is provided on the lens carrier at one side of the magnet and which protrudes toward the main ball accommodation part; and a plurality of balls provided between the main ball accommodation part and the guide protrusion and between the sub-ball accommodation part and the other surface of the lens carrier, wherein one ball is provided between the

Abstract: A cover window includes a base layer including a first flat portion and a first bending portion bent from a first end of the first flat portion and a coating layer including a first coating portion disposed on the first flat portion and a second coating portion disposed on the first bending portion and having a thickness less than a thickness of the first coating portion. A first end of the second coating portion has a thickness greater than a thickness of a second end of the second coating portion, and the first end of the second coating portion is closer to the first coating portion than the second end of the second coating portion is.

Abstract: A method of manufacturing a window includes preparing a base material layer, forming a first hard coating layer on the base material layer, and forming a second hard coating layer on the first hard coating layer. The forming of the second hard coating layer is performed in an environment having an oxygen concentration of about 0.01% to about 0.1%.

Abstract: Disclosed is a camera lens assembly having a lens part and a lens carrier for moving the lens part such that the same moves forward and backward in the direction of an optical axis. The disclosed camera lens assembly comprises: a base part; a lens carrier disposed to be slidable along a direction of an optical axis in the base part; and an automatic focal point adjustment driving part having one portion installed to the base part and the remaining portion installed to the lens carrier, to drive the lens carrier to move forward and backward along the direction of the optical axis by means of an electromagnetic force, wherein a part of the lens carrier and a part of the base part are convex-concave-coupled to each other, and a plurality of bearings are arranged on the convex-concave-coupled portion.

Abstract: A laser crystallization system includes a transfer part that transfers a substrate on which an amorphous silicon thin film is deposited into a chamber, a laser irradiation part that irradiates an excimer laser to the substrate for crystallization of the amorphous silicon thin film in the chamber, a stage that supports the substrate in the chamber, a measuring part that measures a light transmittance value of the substrate, and a controller that controls the laser irradiation part to irradiate the excimer laser to the substrate when the light transmittance value is equal to or lower than a reference transmittance value and controls the laser irradiation part not to irradiate the excimer laser to the substrate when the light transmittance value is higher than the reference transmittance value.

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.