Abstract: A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

Abstract: A display device includes a substrate; a first active layer disposed on the substrate; and a first gate electrode overlapping a part of the first active layer, the first gate electrode having a hole, and the hole of the first gate electrode does not overlap the first active layer.

Abstract: A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods.

Abstract: A cartridge for virus detection and a system for virus detection are disclosed. The cartridge includes a sample chamber capable of accommodating therein a sample solution containing therein magnetic beads capable of fixing a virus thereto, wherein a control hole is formed at the sample chamber; a lysis chamber connected to the sample chamber via a channel and capable of receiving the sample solution therefrom, wherein a lysis reaction is carried out in the lysis chamber; and a detection flow path having one or more first degassing holes formed at a downstream end thereof, wherein the detection flow path is capable of extracting the sample solution free of the magnetic beads from the lysis chamber under a negative pressure generated by an interaction between the control hole and the first degassing hole, and of detecting the virus therefrom.

Abstract: A light emitting element, a display device including the same and a method of fabricating the same. The light emitting element may include an element rod including a first semiconductor layer, an active layer, and a second semiconductor layer. First and second contact electrodes may be respectively disposed on a first end surface and a second and opposite end surface of the element rod. A reflection layer may surround the first contact electrode and the element rod. An inner insulating layer may be disposed inside the reflection layer and surround the first contact electrode and the element rod. An outer insulating layer external to the reflection layer and may surround the first contact electrode and the element rod. A first inclination of side surfaces of the first semiconductor layer and the active layer and a second inclination of a side surface of the second semiconductor layer may be different.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

Abstract: A light emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a first insulating layer surrounding the first semiconductor layer, the second semiconductor layer, and the active layer, and a first thickness of the first insulating layer surrounding the first semiconductor layer is different from a second thickness of the first insulating layer surrounding the second semiconductor layer.

Abstract: A light-emitting element comprises a first semiconductor layer, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, an electrode layer provided on the second semiconductor layer, and an insulating film around outer peripheral surfaces of the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, wherein the active layer includes a cover layer including a plurality of quantum dots, and the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer are sequentially stacked in one direction to form a shape of a rod.

Abstract: Disclosed are an electrolyte solution for a lithium secondary battery capable of improving the output and lifespan characteristics at high temperature of a lithium secondary battery, and a lithium secondary battery including the same. An electrolyte solution for a lithium secondary battery includes a lithium salt, a solvent, and a functional additive, and in particular, the functional additive includes (4-(1H-1,2,4-triazol-1-yl)phenyl)(fluorosulfonyl)sulfamoyl fluoride.

Abstract: The present disclosure relates to an electrolyte solution for a lithium secondary battery capable of improving the output and lifespan characteristics at high temperature of a lithium secondary battery, and a lithium secondary battery including the same. An electrolyte solution for a lithium secondary battery includes a lithium salt, a solvent, and a functional additive, wherein the functional additive includes a first electrode film additive, which is 3-(4-cyano-5-(4-nitrophenyl)-1H-1,2,3-triazol-1-yl)propyl 4-methylbenzenesulfonate.

Abstract: Disclosed are an electrolyte solution for a lithium secondary battery capable of improving the output and lifespan characteristics at high temperature of a lithium secondary battery, and a lithium secondary battery including the same. The electrolyte solution includes a lithium salt, a solvent, and a functional additive. The functional additive includes benzo[d]thiazol-6-yl(fluorosulfonyl)sulfamoyl fluoride.

Abstract: The present disclosure relates to an electrolyte solution for a lithium secondary battery capable of improving the output and lifespan characteristics at high temperature of a lithium secondary battery, and a lithium secondary battery including the same. An electrolyte solution for a lithium secondary battery includes a lithium salt, a solvent, and a functional additive, wherein the functional additive includes a positive-electrode film additive, which is 3-(4-cyano-5-(4-nitrophenyl)-1H-1,2,3-triazol-1-yl)propyl methanesulfonate.

Abstract: A light-emitting diode includes a first semiconductor region having a first conductive type; a second semiconductor region having a second conductive type; and an active layer disposed between the first semiconductor region and the second semiconductor region and including phosphorus (P). The light-emitting diode has a rod shape, the second semiconductor region includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, which are sequentially stacked, the first semiconductor layer is disposed between the active layer and the second semiconductor layer, and the second semiconductor layer includes a compound represented by AlGaInP and satisfying Equation 1.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of: preparing a lower substrate, which includes a substrate and a separation layer formed on the substrate, and preparing at least one semiconductor rod, which is formed on the separation layer, forming a rod structure, which includes a rod protecting layer formed on the separation layer to surround the at least one semiconductor rod and an auxiliary layer formed on at least part of the rod protecting layer and separating the rod structure from the lower substrate by removing the separation layer, and separating the at least one semiconductor rod from the rod structure.

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Abstract: A display device may include: a substrate including a display area and a non-display area; and pixels in the display area, and each including sub-pixels. Each sub-pixel may include a pixel circuit layer, and a display element layer including at least one light emitting element. The display element layer may include: a first electrode on the pixel circuit layer; a second electrode on the first electrode and electrically insulated from the first electrode; the light emitting element including a first end portion coupled to the first electrode and a second end portion coupled to the second electrode, and between the first electrode and the second electrode; an intermediate layer enclosing at least one area of the light emitting element, and on the first electrode; a connection line electrically connected to the second electrode. The second electrode may be on the intermediate layer.

Abstract: A display device includes a via insulating layer on a substrate; a first electrode on the via insulating layer; a pixel defining layer including an inclined region on the first electrode and including a first opening exposing a portion of the first electrode, and a flat region at a side of the inclined region and in contact with the via insulating layer; a light emitting layer on the portion of the first electrode exposed by the first opening; organic particles on the flat region of the pixel defining layer; an encapsulation layer covering the pixel defining layer, the light emitting layer, and the organic particles, and including a first layer, a second layer, and a third layer; and a first light blocking layer on the third layer of the encapsulation layer to overlap the flat region of the pixel defining layer and form a second opening.