Abstract: A display device, a light-emitting element, and a method of manufacturing a light-emitting element are provided. A display device includes: a first electrode and a second electrode spaced apart from each other; and light-emitting elements between the first electrode and the second electrode, and each of the light-emitting elements includes a first area having a first diameter, a second area having a second diameter greater than the first diameter, a first insulating film surrounding the first area, and a second insulating film on the first insulating film, and the second insulating film surrounds the second area exposed by the first insulating film.

Abstract: The disclosed computer-implemented method may include establishing a virtual boundary for a virtual-world environment in reference to a real-world environment, and determining whether the virtual boundary requires a correction. The method may include providing, in response to determining that the virtual boundary requires the correction, and alert and, in response to the alert, receiving a request from a user to modify the virtual boundary. The method may further include monitoring, in response to the request from the user, an orientation of a direction indicator to generate orientation data, and modifying the virtual boundary based on the orientation data. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: A developer cartridge including a housing to contain a developer and including a developer outlet from which the developer is dischargeable. A transport member is arranged inside the housing to rotate to transport the developer to the developer outlet. A volume adjustment member is insertable inside the transport member opposite to the developer outlet to adjust an inside volume of the housing.

Abstract: A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to ?20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.

Abstract: A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Abstract: A computing system includes a host, a first electronic device including a memory and an accelerator, and a second electronic device including a direct memory access (DMA) engine. Based on a command transmitted from the host through the first electronic device, the DMA engine transmits data and completion information of the command to the first electronic device. The memory includes a data buffer storing the data and a completion queue buffer storing the completion information. The accelerator executes a calculation on the data. The DMA engine transmits the data to the first electronic device and then transmits the completion information to the first electronic device.

Abstract: Disclosed are a multi-mode thermal imaging device and an operation method thereof. According to an embodiment of the present invention, in a first mode, a first sample is scanned with an optical signal from a light source, signals reflected from the first sample by the scanning are detected separately for each wavelength, a reflectance change spectrum according to the wavelength is derived on the basis of the signals detected separately for each wavelength, a wavelength is selected on the basis of the derived reflectance change spectrum, and a thermal image of the first sample is obtained, through a filter, by detecting an optical signal limited to the selected wavelength from among the signals reflected from the first sample. In a second mode, thermal radiation of a second sample is detected to obtain a thermal image of the second sample.

Abstract: A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

Abstract: A developer cartridge including a housing, a spring auger, and a rotation member. The housing accommodating a developer and including a first end portion and a second end portion in a lengthwise direction. The housing is to discharge the developer through a developer discharge outlet coupled to the housing and adjacent to one of the first end portion and the second end portion. The spring auger is located inside the housing and is to rotate to transport the developer to the developer discharge outlet. The rotation member is located at the first end portion of the housing and connected to a first end of the spring auger to rotate the spring auger. A first portion of a bottom surface of the housing is flat and a second portion of the bottom surface is internally convex from the first portion are repeatedly arranged on the bottom surface in the lengthwise direction.

Abstract: A method of verifying an application, according to an embodiment, includes: storing application codes; loading a part of the application codes into a memory; and verifying the application by using the codes loaded into the memory.

Abstract: A light-emitting diode includes a first semiconductor region having a first conductive type; a second semiconductor region having a second conductive type; and an active layer disposed between the first semiconductor region and the second semiconductor region and including phosphorus (P). The light-emitting diode has a rod shape, the second semiconductor region includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, which are sequentially stacked, the first semiconductor layer is disposed between the active layer and the second semiconductor layer, and the second semiconductor layer includes a compound represented by AlGaInP and satisfying Equation 1.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods.

Abstract: A display device may include: a substrate including a display area and a non-display area; and pixels in the display area, and each including sub-pixels. Each sub-pixel may include a pixel circuit layer, and a display element layer including at least one light emitting element. The display element layer may include: a first electrode on the pixel circuit layer; a second electrode on the first electrode and electrically insulated from the first electrode; the light emitting element including a first end portion coupled to the first electrode and a second end portion coupled to the second electrode, and between the first electrode and the second electrode; an intermediate layer enclosing at least one area of the light emitting element, and on the first electrode; a connection line electrically connected to the second electrode. The second electrode may be on the intermediate layer.

Abstract: Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of: preparing a lower substrate, which includes a substrate and a separation layer formed on the substrate, and preparing at least one semiconductor rod, which is formed on the separation layer, forming a rod structure, which includes a rod protecting layer formed on the separation layer to surround the at least one semiconductor rod and an auxiliary layer formed on at least part of the rod protecting layer and separating the rod structure from the lower substrate by removing the separation layer, and separating the at least one semiconductor rod from the rod structure.

Abstract: A light emitting element structure may include at least one light emitting element which is disposed on a substrate and spaced apart from each other, and extends in a direction perpendicular to the substrate; an auxiliary layer which is disposed on the substrate, exposes at least a portion of the upper surface of the substrate, and surrounds the outer surface of the light emitting element; a current spreading layer which is disposed on the auxiliary layer and electrically contacts an end of the light emitting element; a first pad which is electrically connected to the end of the light emitting element, disposed on the current spreading layer, and does not to overlap the light emitting element; and a second pad which is electrically connected to another end of the light emitting element disposed on the upper surface of the exposed substrate and spaced apart from the auxiliary layer.

Abstract: An electronic system includes a host device and a storage device including a first memory device of a volatile type and a second memory device of a nonvolatile type. The first memory device is accessed by the host device through a memory-mapped input-output interface and the second memory device is accessed by the host device through a block accessible interface. The storage device provides a virtual memory region to the host device such that a host-dedicated memory region having a first size included in the first memory device is mapped to the virtual memory region having a second size larger than the first size.

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Abstract: A light emitting device may include: a substrate; a light emitting element located on the substrate and configured to emit light; a first electrode and a second electrode spaced from each other with the light emitting element interposed therebetween; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode with a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode with a second end of the light emitting element. In a plan view, the color conversion layer may be spaced from the light emitting element and overlaps with at least one of the first and the second contact electrodes.

Abstract: A developer cartridge including a housing to contain a developer and including a developer outlet from which the developer is dischargeable. A transport member is arranged inside the housing to rotate to transport the developer to the developer outlet. A volume adjustment member is insertable inside the transport member opposite to the developer outlet to adjust an inside volume of the housing.