Patents by Inventor Dong-Won Hwang

Dong-Won Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160089637
    Abstract: The present invention relates to a nitrogen adsorbent having nitrogen selective adsorptivity by including an organic-inorganic hybrid nanoporous material having a coordinatively unsaturated metal site with density of 0.2 mmol/g to 10 mmol/g in a skeleton, surface or pore; and use thereof, such as a device separating nitrogen from a gas mixture containing nitrogen and methane, a pressure swing adsorption separation device and a temperature swing adsorption separation device for separating nitrogen provided, a method for separating nitrogen and methane from a gas mixture containing nitrogen and methane, a device for separating nitrogen, oxygen or argon, a method for separating nitrogen, oxygen or argon from a gas mixture containing nitrogen, oxygen or argon, and a method for preparing nitrogen or high purity inert gas all separated from a gas mixture containing nitrogen and inert gas.
    Type: Application
    Filed: September 25, 2015
    Publication date: March 31, 2016
    Inventors: Jong-San Chang, Young Kyu Hwang, Ji Woong Yoon, Do-Young Hong, U-Hwang Lee, Sukyung Lee, Kyung Ho Cho, Dong Won Hwang, Youn-Sang Bae, Seung-Joon Lee
  • Publication number: 20160016151
    Abstract: The present invention provides a method for directly producing lactide by subjecting lactic acid to a dehydration reaction in the presence of a catalyst comprising a tin compound, preferably, a tin (IV) compound, wherein lactide can be produced directly or by one step from lactic acid, without going through the step of producing or separating lactic acid oligomer. The method of the present invention has advantages of causing no loss of lactic acid, having a high conversion ratio to lactic acid and a high selectivity to optically pure lactide, and maintaining a long life time of the catalyst. Further, since lactic acid oligomer is not or hardly generated and the selectivity of meso-lactide is low, the method also has an advantage that the cost for removing or purifying this can be saved.
    Type: Application
    Filed: September 29, 2015
    Publication date: January 21, 2016
    Inventors: Dong Won HWANG, Jong-San CHANG, Pravin P. UPARE, U-Hwang LEE, Young Kyu HWANG
  • Publication number: 20150292058
    Abstract: The present invention relates to a method for recovering indium in a high selectivity and a high efficiency from an indium-containing solution, dispersion or mixture such as seawater, industrial water, waste water, cooling water, a solution extracted from wastes of electronic products such as display panel, or the like.
    Type: Application
    Filed: January 18, 2013
    Publication date: October 15, 2015
    Inventors: U-Hwang Lee, Jong-San Chang, Sue Kyung Lee, Young Kyu Hwang, Dong Won Hwang, Da Hye Jeon, Kyu Eun Shim
  • Publication number: 20150239863
    Abstract: The present invention provides a method for directly producing lactide by subjecting lactic acid to a dehydration reaction in the presence of a catalyst comprising a tin compound, preferably, a tin (IV) compound, wherein lactide can be produced directly or by one step from lactic acid, without going through the step of producing or separating lactic acid oligomer. The method of the present invention has advantages of causing no loss of lactic acid, having a high conversion ratio to lactic acid and a high selectivity to optically pure lactide, and maintaining a long life time of the catalyst. Further, since lactic acid oligomer is not or hardly generated and the selectivity of meso-lactide is low, the method also has an advantage that the cost for removing or purifying this can be saved.
    Type: Application
    Filed: April 24, 2013
    Publication date: August 27, 2015
    Inventors: Dong Won Hwang, Jong-San Chang, Pravin P. Upware, U-Hwang Lee, Young Kyu Hwang
  • Patent number: 9038409
    Abstract: The present disclosure provides an apparatus for treating air by using porous organic-inorganic hybrid materials as an absorbent, which comprises an inlet passage for receiving air from outside; a dehumidifying part comprising porous organic-inorganic hybrid materials as an adsorbent for removing moisture from the air receiving through the inlet passage; a regenerating unit for regenerating the adsorbent of the dehumidifying part; and an outlet passage for discharging the dehumidified air to outside. Said apparatus preferably comprises two dehumidifying parts of two-bed switching type and two switch valves, wherein said two dehumidifying parts are alternatively operated for dehumidification and for regeneration by switching said switch valves to convert direction of air flow.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: May 26, 2015
    Assignee: Korea Research Institute of Chemical Technology
    Inventors: Young Kyu Hwang, Jong-San Chang, Dong Won Hwang, Ji Sun Lee
  • Patent number: 9012685
    Abstract: A method for recovery of highly pure alkyl lactate and lactic acid is provided, which includes a step 1 for producing source liquid comprising lactic acid or ammonium lactate; a step 2 for dehydrating the source liquid product of step 1; a step 3 for producing liquid mixture by sequentially adding and stirring alcohol and acid solution to the dehydrated source liquid; a step 4 for separating and removing ammonium salt precipitation from the liquid mixture of step 3; a step 5 for producing alkyl lactate from ammonium salt-free liquid mixture by esterification reaction; and a step 6 for separating alcohol and alkyl lactate by distillation from the mixture of step 5.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: April 21, 2015
    Assignee: Korea Research Institute of Chemical Technology
    Inventors: Dong Won Hwang, Jong-San Chang, Young Kyu Hwang, U-Hwang Lee, HyoJin Gwak
  • Publication number: 20140287235
    Abstract: The present invention relates to a complex and a method for manufacturing same, the complex comprising: at least one crystalline hybrid nanoporous material powder, in which a metal ion, or a metal ion cluster to which oxygen is bound, and an organic ligand, or the organic ligand and a negative ion ligand are in a coordinate covalent bond; and at least one organic polymer additive, or at least one organic polymer additive and an inorganic additive, wherein the shape of the complex is spherical or pseudo-spherical, the size of the complex is 0.1 to 100 mm, a total volume of pores is 5 or more volume % based on the sum of a total volume of nanoporous material having a size of at most 10 nm and a total volume of pores having a size of at least 0.1 ?m, and wherein a non-surface value per weight (m2/g) of the complex as at least 83% of a non-surface value per weight (m2/g) of the nanoporous material powder.
    Type: Application
    Filed: August 14, 2012
    Publication date: September 25, 2014
    Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Jong-San Chang, U-Hwang Lee, Young Kyu Hwang, Dong Won Hwang, You-Kyong Seo, Ji Sun Lee, Ji Woong Yoon, Kyu Eun Shim
  • Patent number: 8507399
    Abstract: Porous organic-inorganic hybrid materials with crystallinity and a method for preparing the same are provided. The method comprises preparing a reaction solution containing a mixture of at least one inorganic metal precursor, at least one organic compound which may act as a ligand, and a solvent (step 1); and forming porous organic-inorganic hybrid materials with crystallinity by reacting the reaction solution (step 2), wherein the reaction is carried out under the pressure of about 3 atm or less.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: August 13, 2013
    Assignee: Korea Research Institute of Chemical Technology
    Inventors: Young Kyu Hwang, Jong-San Chang, You-Kyong Seo, Dong Won Hwang
  • Publication number: 20120289399
    Abstract: Porous organic-inorganic hybrid materials with crystallinity and a method for preparing the same are provided. The method comprises preparing a reaction solution containing a mixture of at least one inorganic metal precursor, at least one organic compound which may act as a ligand, and a solvent (step 1); and forming porous organic-inorganic hybrid materials with crystallinity by reacting the reaction solution (step 2), wherein the reaction is carried out under the pressure of about 3 atm or less.
    Type: Application
    Filed: July 27, 2012
    Publication date: November 15, 2012
    Inventors: Young Kyu HWANG, Jong-San CHANG, You-Kyong SEO, Dong Won HWANG
  • Patent number: 8252950
    Abstract: Porous organic-inorganic hybrid materials with crystallinity and a method for preparing the same are provided. The method comprises preparing a reaction solution containing a mixture of at least one inorganic metal precursor, at least one organic compound which may act as a ligand, and a solvent (step 1); and forming porous organic-inorganic hybrid materials with crystallinity by reacting the reaction solution (step 2), wherein the reaction is carried out under the pressure of about 3 atm or less.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: August 28, 2012
    Assignee: Kora Research Institute of Chemical Technology
    Inventors: Young Kyu Hwang, Jong-San Chang, You-Kyong Seo, Dong Won Hwang
  • Publication number: 20120142945
    Abstract: A method for recovery of highly pure alkyl lactate and lactic acid is provided, which includes a step 1 for producing source liquid comprising lactic acid or ammonium lactate; a step 2 for dehydrating the source liquid product of step 1; a step 3 for producing liquid mixture by sequentially adding and stirring alcohol and acid solution to the dehydrated source liquid; a step 4 for separating and removing ammonium salt precipitation from the liquid mixture of step 3; a step 5 for producing alkyl lactate from ammonium salt-free liquid mixture by esterification reaction; and a step 6 for separating alcohol and alkyl lactate by distillation from the mixture of step 5.
    Type: Application
    Filed: December 2, 2011
    Publication date: June 7, 2012
    Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Dong Won HWANG, Jong-San CHANG, Young Kyu HWANG, U-Hwang LEE, HyoJin GWAK
  • Publication number: 20110118490
    Abstract: Porous organic-inorganic hybrid materials with crystallinity and a method for preparing the same are provided. The method comprises preparing a reaction solution containing a mixture of at least one inorganic metal precursor, at least one organic compound which may act as a ligand, and a solvent (step 1); and forming porous organic-inorganic hybrid materials with crystallinity by reacting the reaction solution (step 2), wherein the reaction is carried out under the pressure of about 3 atm or less.
    Type: Application
    Filed: December 2, 2009
    Publication date: May 19, 2011
    Inventors: Young Kyu HWANG, Jong-San Chang, You-Kyong Seo, Dong Won Hwang
  • Publication number: 20110073801
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Application
    Filed: November 30, 2010
    Publication date: March 31, 2011
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In LA, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
  • Publication number: 20110067426
    Abstract: The present disclosure relates to an apparatus for treating air. More particularly, the present disclosure provides an apparatus for treating air comprising porous organic-inorganic hybrid materials formed by binding a central metal ion with an organic ligand.
    Type: Application
    Filed: December 2, 2009
    Publication date: March 24, 2011
    Inventors: Young Kyu HWANG, Jong-San Chang, Dong Won Hwang, Ji Sun Lee
  • Patent number: 7879736
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: February 1, 2011
    Assignees: Samsung Electronics Co., Ltd., Cheil Industries, Inc.
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In La, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
  • Publication number: 20090130842
    Abstract: A contact hole forming method and a method of manufacturing semiconductor device using the same may include forming a layer on a substrate; anisotropically etching the layer to form a dummy contact hole exposing the substrate; isotropically etching a sidewall of the dummy contact hole to form a contact hole by alternatively and repeatedly supplying an etching solution including a fluoride salt in a low-polarity organic solvent and deionized water to the dummy contact hole. The methods increase reliability of semiconductor memory devices.
    Type: Application
    Filed: October 17, 2008
    Publication date: May 21, 2009
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Yang-koo Lee, Hun-Jung Yi
  • Publication number: 20080121622
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 29, 2008
    Applicants: SAMSUNG ELECTRONICS CO., LTD., CHEIL INDUSTRIES, INC.
    Inventors: Dong-Won HWANG, Kook-Joo KIM, Jung-In LA, Pil-Kwon JUN, Seung-Ki CHAE, Yang-Koo LEE
  • Patent number: 7351667
    Abstract: An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: April 1, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Won Hwang, Hun-Jung Yi, Kwang-Shin Lim, Jung-Dae Park
  • Publication number: 20070102023
    Abstract: An apparatus and method for removing silicate from a phosphoric acid solution, including a treating unit, a regeneration line coupled to the treating unit, an additive solution supply member in communication with the regeneration line to decrease the temperature of the phosphoric acid solution and the concentration of the phosphoric acid therein, a filter in communication with the regeneration line to remove precipitated silicate particles, and a heating member having a heater and a vaporizing chamber to remove the additive.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 10, 2007
    Inventors: Hun-jung Yi, Byung-kwang Byun, Gyung-soo Kim, Jai-young Woo, Dong-won Hwang, Seung-ki Chae, Yang-koo Lee, Sang-hee Kim, Young-hwan Park
  • Publication number: 20070090325
    Abstract: An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
    Type: Application
    Filed: October 16, 2006
    Publication date: April 26, 2007
    Inventors: Dong-Won Hwang, Hun-Jung Yi, Kwang-Shin Lim, Jung-Dae Park