Abstract: Embodiments of the invention provide a composition adapted to remove polysilicon. The composition comprises about 1.0 to 10 percent by weight of alkylammonium hydroxide, about 0.1 to 5.0 percent by weight of hydrogen peroxide, and water.

Abstract: In one embodiment, a sample of chemical solution is provided. A first optical property of the sample is detected at a first wavelength and an expected optical property is predicted at a second wavelength, using the first optical property. A second optical property of the sample is detected at the second wavelength. The second optical property is compared with the expected optical property to measure a contamination level of a particular contaminant in the sample.

Abstract: In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.

Abstract: Monitoring metal contamination of a rinsing solution may include providing a sample of the rinsing solution, and mixing the sample of the rinsing solution with a monitoring reagent to provide a monitoring mixture. A property of the monitoring mixture that is dependent on a concentration of a metal in the rinsing solution may then be measured. More particularly, the property of the monitoring mixture may be an absorbency of the monitoring mixture with respect to electromagnetic radiation transmitted through the monitoring mixture. Related systems and reagents are also discussed.