Abstract: A method for forming a contact is provides that can minimize junction leakage. In this method, A contact hole is opened in an insulating layer to expose an impurity diffusion layer in a semiconductor substrate. A silicide layer is then selectively formed on the bottom of the contact hole, i.e., over the impurity diffusion layer. Impurity ions are then implanted into the impurity diffusion layer through the silicide layer so as to reduce contact resistance. The remainder of the contact hole is then filled with metal. Because of the presence of the silicide layer, ion implanting damages is confined to within the suicide layer, and there is no damage to the underlying impurity diffusion layer. As a result, silicon substrate defects can be minimized and a reliable junction without junction leakage can be obtained.

Abstract: Methods of forming integrated circuit capacitors (e.g., DRAM capacitors) include the steps of forming a first capacitor electrode (e.g., polysilicon electrode) on a substrate and then forming a titanium nitride layer on the first capacitor electrode. A tantalum pentoxide dielectric layer is then formed on an upper surface of the titanium nitride layer. A step is then performed to convert the underlying titanium nitride layer into a titanium oxide layer. A second capacitor electrode is then formed on the tantalum pentoxide layer. The step of converting the titanium nitride layer into a titanium oxide layer is preferably performed by annealing the tantalum pentoxide layer in an oxygen ambient in a range between about 700° C. and 900° C. This oxygen ambient provides free oxygen to fill vacancies within the tantalum oxide layer and also provides free oxygen which diffuses into the underlying titanium nitride layer.

Abstract: Control of smoke and fire in a region threatened by a fire through the use of an exit door and a doorcase around an exit door is accomplished in such a manner to first supply water from a water source to a water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube is provided with a solenoid valve for controlling the water flow into the doorcase and a branch-connecting portion. Further, pressurized air is supplied to an air supply tube connected to the branch-connecting portion to fluid-communicate with the water supply tube. The air supply tube is provided with an air solenoid valve for controlling the airflow into the branch-connecting portion. The solenoid valve is opened to render the water to flow into the doorcase having a plurality of nozzle holes facing to the exit door, if a fire is detected either by a detector or a manual actuator.

Abstract: A ferroelectric memory device formed on a microelectronic substrate is evaluated. The memory device includes a sense amplifier and a plurality of ferroelectric capacitors that are operatively connected to the sense amplifier to read information stored in the ferroelectric capacitors. A plurality of test ferroelectric capacitors is formed on the microelectronic substrate. Polarization characteristics are determined for the plurality of test ferroelectric capacitors. An input to the sense amplifier is estimated from the determined polarization characteristics, and the ferroelectric memory device is evaluated based on the estimated input. The estimated input may be compared to an input criterion, e.g., a minimum sensing charge or voltage for the sense amplifier, and the ferroelectric memory device may be either rejected or subjected to further testing depending on whether the estimated input fails to meet or meets the input criterion.