Abstract: There are provided a gate driver and a display device including the same. The gate driver includes: a first scan driver; a first sensing driver; a first scan clock line; and a first sensing clock line. The first scan clock line includes a first scan clock main line extending in one direction, and a first scan clock connection line connected to the first scan clock main line and the first scan driver. The first sensing clock line includes a first sensing clock main line extending in one direction, and a first sensing clock connection line connected to the first sensing clock main line and the first sensing driver. The first scan clock main line is closer to each of the first scan driver and the first sensing driver than the first sensing clock main line.

Abstract: Various embodiments generally relate to a method for forming a graphene barrier layer for a semiconductor device, and more particularly, to a method of forming a barrier thin film including a graphene layer capable of reducing the contact resistance of a metal interconnect. A method for forming a graphene barrier layer according to an embodiment includes: loading a substrate, which has a titanium-containing layer formed thereon, in a chamber of a substrate processing system, the chamber having a processing space formed therein; inducing nucleation on the titanium-containing layer by supplying a first reactant gas including a unsaturated hydrocarbon into the chamber; and forming a graphene layer on the titanium-containing layer by supplying a second reactant gas including a saturated hydrocarbon into the chamber.

Abstract: A display device, an apparatus for manufacturing a display device and a method of manufacturing a display device are provided. A display device includes a flexible substrate including a main region, a bending region, which extends from an end of the main region, and a sub-region, which extends from an end of the bending region, the sub-region being reversed from the bending region to be attached on a rear surface of the main region, and an active element layer disposed in the main region of the flexible substrate, wherein a thickness of the flexible substrate is greater in the bending region than in the main region and the sub-region.

Abstract: A display device includes a substrate, a metal layer disposed on the substrate, a first conductive layer including a lower pattern disposed on the metal layer, an active layer disposed on the first conductive layer, a second conductive layer disposed on the active layer and including a first gate electrode, a pixel electrode disposed on the second conductive layer, and an emission layer and a common electrode disposed on the pixel electrode.

Abstract: A display device includes: a power source line; a plurality of gate lines each extending in a first direction and arranged along a second direction in a plan view; a plurality of pixels connected to the power source line and the gate lines; and a plurality of vertical lines each extending in the second direction and arranged along the first direction in the plan view, wherein the vertical lines include a plurality of gate connection lines and a plurality of dummy lines between the gate connection lines, wherein the gate connection lines connect the gate lines to a gate driver, wherein the dummy lines are connected to the power source line, and wherein a distance between the dummy lines spaced apart from each other with at least one of the gate connection lines interposed therebetween is constant throughout.

Abstract: A display device includes a substrate including a display area and a non-display area around the display area; a transistor on the substrate; an insulating layer on the transistor; a power voltage line on the insulating layer and transferring a power voltage; a data line on the insulating layer and transferring a data voltage; and an auxiliary wire between the substrate and the power voltage line in the display area. The auxiliary wire includes a portion overlapping the power voltage line and a portion overlapping the data line in a plan view and is electrically connected to the power voltage line.

Abstract: A semiconductor device including a first pad on a substrate extending in a first direction and a second direction, a lower electrode connected to and disposed on the first pad, first to third supporter layers disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction, a dielectric film disposed on the lower electrode and the first to third supporter layers, and an upper electrode disposed on the dielectric film. At least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions.

Abstract: A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.

Abstract: An image forming device includes: a print engine to form an image on a medium, a sensor to irradiate light onto the medium and to detect an amount of light transmitted through the medium, and a processor to control the print engine based on the detected transmitted light amount and temperature data.

Abstract: A display device includes a first electrode and a second electrode disposed on a substrate, at least one light emitting element including a first semiconductor layer including a semiconductor of a first type, a second semiconductor layer including a semiconductor of a second type different from the first type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a third electrode disposed on the substrate and electrically connected to the second electrode. At least a portion of the third electrode is disposed between the first electrode and the second electrode in a plan view.

Abstract: A semiconductor device comprises an active pattern on a substrate; a plurality of nanosheets spaced apart from each other; a gate electrode surrounding each of the nanosheets; a field insulating layer surrounding side walls of the active pattern; an interlayer insulating layer on the field insulating layer; a source/drain region comprising a first doping layer on the active pattern, a second doping layer on the first doping layer, and a capping layer forming side walls adjacent to the interlayer insulating layer; a source/drain contact electrically connected to, and on, the source/drain region, and a silicide layer between the source/drain region and the source/drain contact which contacts contact with the second doping layer and extends to an upper surface of the source/drain region. The capping layer extends from an upper surface of the field insulating layer to the upper surface of the source/drain region along side walls of the silicide layer.

Abstract: A water and wastewater treatment process optimization and automatic design system and a design method using the same of the present invention can optimize water and wastewater treatment processes for design of a water and wastewater treatment device that includes a plurality of treatment processes and can automatically generate design deliverables such as drawings, bills of quantities, etc., for design of an optimal process configuration.

Abstract: A display device including a substrate, a first upper power line, a conductive member, a protective insulating layer, an upper connection member, and a sub-pixel structure. The upper connection member is disposed in a first pad area and a first peripheral area on a planarization layer, and electrically connects the first upper power line and the conductive member through a first contact hole, which is formed in the protective insulating layer and the planarization layer located on the conductive member, and a second contact hole, which is formed in the protective insulating layer and the planarization layer located on the first upper power line.

Abstract: A vehicle is provided and includes a gesture detector that detects a gesture of a driver to designate a manipulation target object and a voice recognizer that recognizes a voice command generated by the driver to operate the designated manipulation target object. A controller is configured to transmit a control signal corresponding to the voice command to the manipulation target object, and to operate the manipulation target object to perform an operation corresponding to the voice command.

Abstract: A display device and a method of fabricating a display device are provided. A display device includes: a first electrode and a second electrode on a substrate and spaced apart from each other; a third electrode on the substrate; and a first light emitting element between the first electrode and the second electrode. The first electrode, the second electrode, and the third electrode may be arranged on a same layer. The third electrode may be electrically separated from the first electrode and the second electrode.

Abstract: A display device includes a substrate including a display area and a non-display area around the display area; a transistor on the substrate; an insulating layer on the transistor; a power voltage line on the insulating layer and transferring a power voltage; a data line on the insulating layer and transferring a data voltage; and an auxiliary wire between the substrate and the power voltage line in the display area. The auxiliary wire includes a portion overlapping the power voltage line and a portion overlapping the data line in a plan view and is electrically connected to the power voltage line.

Abstract: The present invention relates generally to a method of manufacturing far-infrared radiation thermal wire and far-infrared radiation thermal wire thereby, more particularly, a method of manufacturing far-infrared radiation thermal wire and far-infrared radiation thermal wire manufactured thereby, in which electric power is supplied with a predetermined resistance value.

Abstract: A display device including a substrate including a display area and an opening area therein, a data conductive layer on the substrate and including a source electrode and a voltage wiring in the opening area, a protective layer on the data conductive layer and covering the source electrode and the voltage wiring, a pixel electrode layer including a pixel electrode connected to the source electrode through a first contact hole, and an electrode pattern connected to the voltage wiring through a second contact hole, a pixel defining layer including an opening exposing the pixel electrode and a hole exposing the electrode pattern, a light emitting layer on the pixel defining layer and a common electrode on the light emitting layer, wherein the hole does not overlap the first and second contact holes.

Abstract: Provided are an electrode wherein a short-circuit preventing film laminated on the surface of the electrode can prevent a short circuit between a cathode and an anode when a battery is overheated; a secondary battery using the electrode; and a method for manufacturing the electrode. The secondary battery electrode includes: an electrode current collector; an active material layer formed on the electrode current collector; and a short-circuit preventing film laminated on the active material layer, wherein the short-circuit preventing film includes a nanoweb type porous membrane which is formed by integrating nanofiber strands obtained by electrospinning polyacrylonitrile (PAN).

Abstract: A dual clutch transmission may include a first input shaft, a second input shaft, a first output shaft and a second output shaft; a first gear constrained to the first input shaft; a second gear and a third gear constrained to the second input shaft; a fourth gear provided to constrain the rotation to the second input shaft; a fifth gear which is engaged with the third gear; a sixth gear which is gear-engaged with the fourth gear; a seventh gear which is engaged with the first gear; an eighth gear which is gear-engaged with the second gear; and a ninth gear which is gear-engaged with the fourth gear.