Abstract: The present disclosure relates to a secondary battery manufacturing system having a multi-packaging unit, in which multiple packaging units of a secondary battery manufacturing facility are provided and a transfer box on which an electrode assembly is accommodated is transferred to each packaging unit by a transfer unit, wherein the secondary battery manufacturing system includes: an electrode supply unit equipped with a plurality of stacking devices for supplying an electrode assembly in which a plurality of battery cells are stacked; a tab-welding unit; at least one packaging unit; at least one temporary buffer; and a transfer unit.

Abstract: The present disclosure relates to a secondary battery manufacturing system in which a packaging unit of a secondary battery manufacturing facility are configured to have multiple packaging units, and having a multipackaging unit such that a transfer box in which an electrode assembly is seated is transferred to each of the packaging units by a transfer unit, and including an electrode supply unit having a plurality of stacking devices supplying an electrode assembly in which a plurality of battery cells are stacked, a tab welding unit, at least one packaging unit, at least one temporary buffer, and a transfer unit.

Abstract: An apparatus for treating a substrate, the apparatus comprising: a treating container having an inner space; a support unit supporting and rotating the substrate in the inner space; and an exhaust unit exhausting an air flow in the inner space, wherein the treating container includes an outer cup providing the inner space; and an inner cup disposed at the inner space and spaced apart from the outer cup, and wherein the outer cup has a protrusion at a side wall thereof.

Abstract: According to an embodiment of a specimen inspection apparatus, the specimen inspection apparatus may comprise: a radiation unit; a reflection unit; a focus adjusting unit; a reception unit; and a control unit. The specimen inspection apparatus may comprise: a radiation unit for emitting a terahertz wave; a reflection unit for changing the path of a terahertz wave emitted from the radiation unit; a focus adjusting unit for forming an irradiation region on a specimen according to the path of the terahertz wave; a reception unit for receiving individual terahertz waves obtained by reflection, by the specimen, of the terahertz wave irradiated onto the first region; and a control unit for controlling the distance between at least two elements among the plurality of elements, and detecting whether the specimen is defective, according to the reflectivity difference between the terahertz waves.

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

Abstract: According to one embodiment of the present invention, A sample inspection device may provided, a total inspection module scanning a first area comprising a plurality of samples; a precision inspection module performing inspection on a sample determined as a suspected defective sample by the total inspection module in the first area; and a controller processing each data obtained from the total inspection module and the precision inspection module, and detecting a defective sample in the first area, wherein the precision inspection module may include an emitter emitting terahertz wave to the first area, a guide wire guiding an irradiation direction of the terahertz wave, and a vibration unit vibrating the guide wire.

Abstract: A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Abstract: According to an aspect of the invention, a thickness measuring device comprising: an emission unit emitting an electromagnetic wave toward a specimen, a reception unit receiving an electromagnetic wave output from a direction in which the specimen is positioned; and a control unit calculating a thickness of the specimen by receiving a signal from the reception unit, wherein when the specimen has a first thickness, the reception unit receives a first electromagnetic wave, and when the specimen has a second thickness, the reception unit receives a second electromagnetic wave, wherein the first electromagnetic wave has a first peak value at a first time point, and the second electromagnetic wave has a second peak value at a second time point, and wherein when the first thickness is greater than the second thickness, the first peak value is smaller than the second peak value, may be provided.

Abstract: An apparatus for processing a substrate includes a first processing unit configured to have a first processing container having a first inner space and a first support unit supporting and rotating the substrate in the first inner space; a second processing unit configured to have a second processing container having a second inner space and a second support unit supporting and rotating the substrate in the second inner space; an exhaust unit configured to exhaust the first and the second inner space; a first exhaust pipe configured to have a first exhaust port for introducing atmosphere of the first inner space and exhaust the atmosphere introduced through the first exhaust port to the integrated duct; and a second exhaust pipe configured to have a second exhaust port for introducing atmosphere of the second inner space and exhaust the atmosphere introduced through the second exhaust port to the integrated duct.

Abstract: The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.

Abstract: An apparatus for treating a substrate, the apparatus comprising: a treating container having an inner space; a support unit supporting and rotating the substrate in the inner space; and an exhaust unit exhausting an air flow in the inner space, wherein the treating container includes an outer cup providing the inner space; and an inner cup disposed at the inner space and spaced apart from the outer cup, and wherein the outer cup has a protrusion at a side wall thereof.

Abstract: A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced.

Abstract: According to an embodiment of a specimen inspection apparatus, the specimen inspection apparatus may comprise: a radiation unit; a reflection unit; a focus adjusting unit; a reception unit; and a control unit. The specimen inspection apparatus may comprise: a radiation unit for emitting a terahertz wave; a reflection unit for changing the path of a terahertz wave emitted from the radiation unit; a focus adjusting unit for forming an irradiation region on a specimen according to the path of the terahertz wave; a reception unit for receiving individual terahertz waves obtained by reflection, by the specimen, of the terahertz wave irradiated onto the first region; and a control unit for controlling the distance between at least two elements among the plurality of elements, and detecting whether the specimen is defective, according to the reflectivity difference between the terahertz waves.

Abstract: A thickness measuring device is provided. The thickness measuring device may include a terahertz wave signal processing unit configured to receive a terahertz wave according to at least one mode of a reflection mode and a transmission mode, a refractive index information acquisition unit configured to acquire refractive index information of the thickness measurement sample in consideration of second-time difference information between a first reflected terahertz wave and a second reflected terahertz wave, and a thickness information acquisition unit configured to acquire thickness information of the thickness measurement sample in consideration of the refractive index information.

Abstract: According to one embodiment of the present invention, A sample inspection device may provided, a total inspection module scanning a first area comprising a plurality of samples; a precision inspection module performing inspection on a sample determined as a suspected defective sample by the total inspection module in the first area; and a controller processing each data obtained from the total inspection module and the precision inspection module, and detecting a defective sample in the first area, wherein the precision inspection module may include an emitter emitting terahertz wave to the first area, a guide wire guiding an irradiation direction of the terahertz wave, and a vibration unit vibrating the guide wire.

Abstract: A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced.

Abstract: In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

Abstract: A thickness measuring device is provided. The thickness measuring device may include a terahertz wave signal processing unit configured to receive a terahertz wave according to at least one mode of a reflection mode and a transmission mode, a refractive index information acquisition unit configured to acquire refractive index information of the thickness measurement sample in consideration of second-time difference information between a first reflected terahertz wave and a second reflected terahertz wave, and a thickness information acquisition unit configured to acquire thickness information of the thickness measurement sample in consideration of the refractive index information.

Abstract: A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.

Abstract: A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.