Abstract: An example fluorophore according to the present application includes a carrier, at least one fluorescent entity, and an amphiphilic linker linking each of the at last one fluorescent entities to the carrier. The linker has a linker length that corresponds to its molecular weight, and the molecular weight is greater than 1000 Da.

Abstract: Disclosed is a light emitting diode including a semiconductor stack, a first electrode, and a second electrode. The semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer has a terrace. The first electrode located on a terrace of the semiconductor stack is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. Two ends of a first inclined sidewall of the semiconductor stack are respectively connected to an upper surface of the second semiconductor layer and the terrace. An included angle between the first inclined sidewall and the terrace ranges from 110° to 135°. An interval between the first electrode and the light emitting layer ranges from 2.5 ?m to 13 ?m. By the configuration, the reliability and the ESD protection performance of the LED can be improved.

Abstract: A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.

Abstract: A light emitting diode includes an epitaxial structure, an N-type electrode, and a transparent conductive electrode. The epitaxial structure includes a P-type semiconductor layer, a light emitting layer, and an N-type semiconductor layer stacked sequentially. The N-type electrode is connected to the N-type semiconductor layer and includes a starting electrode and X extension electrodes, X?2, the X extension electrodes are connected to the starting electrode, and the X extension electrodes are spaced apart along the edge of the starting electrode. The transparent conductive electrode is connected to the P-type semiconductor layer, wherein the transparent conductive electrode is a distributed electrode and includes Y independent surrounding electrodes, Y?2, and Y?X. A first projection of each surrounding electrode on a horizontal plane surrounds a second projection of an extension end of the extension electrode on the horizontal plane.

Abstract: A wafer singulating method includes: providing a wafer product having front and back sides the front side being formed with scribe lines; deep scribing with a laser along the scribe lines on the front side to form a plurality of intersecting trenches; and cleaving the back side along the trenches on the front side. The cleaving of the back side proceeds in different directions each of which is directed to a center of the wafer product from a periphery of the wafer product. The cleaving in each of the directions proceeds along the trenches one after the other from one of the trenches nearest to the periphery of the wafer product and ceases near or at the center.

Abstract: A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first mesa side wall that is defined by a side wall of the first conductive semiconductor layer and a side wall of the active layer, and a first mesa surface that is defined by a portion of a top surface of the second conductive semiconductor layer. The first mesa side wall has a side wall bottom end connected to the first mesa surface to form a connection portion, which is constituted of the side wall bottom end and a mesa surface proximal region of the first mesa surface that adjoins the side wall bottom end and is roughened. A method for manufacturing the light-emitting device is also disclosed.

Abstract: A compound includes a first linker having a first end connected to the carrier, a second linker having a first end connected to the carrier, a third linker having a first end connected to the carrier, a first fluorescent entity connected to a second end of the first linker, a second fluorescent entity different from the first fluorescent entity connected to a second end of the second linker, and a biomolecule connected to a second end of the third linker. The biomolecule is configured to connect to a biomarker. A method of detecting biomarkers is also disclosed.

Abstract: A compound includes a nanomaterial carrier, a first linker having a first end connected to the nanomaterial carrier, a second linker having a second end connected to the nanomaterial carrier, a fluorescent entity connected to a second end of the first linker, and a biomolecule connected to a second end of the second linker. The biomolecule is configured to connect to a cluster of differentiation (CD) of an extracellular vesicle (EV). A method is also disclosed.

Abstract: An example compound according to an example of the present disclosure includes, among other possible things, a nanotube carrier, a moiety, a linker having first and second functional groups, wherein the first functional group is covalently linked to the nanotube carrier, and the second functional group is covalently linked to the moiety. An example method of making a nanotube compound according to the present disclosure is also disclosed.

Abstract: A example compound according to the present disclosure includes, among other possible things, a nanodot carrier, a moiety, and a linker having first and second functional groups, wherein the first functional group is covalently linked to the nanodot carrier, and the second functional group is covalently linked to the moiety. An example method of making a nanodot carrier is also disclosed.

Abstract: A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer.

Abstract: Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.

Abstract: A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.

Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.

Abstract: Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.

Abstract: A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer.

Abstract: The present invention discloses a controlling method and the system for smart home, each home appliance records a user's plurality of times of operations, and each sensor module in home appliance collects information on multiple times of working modes of each appliance, sends to the router wirelessly; the router analyzes busiest working periods and according working modes of each appliance, based on multiple times' working modes of each appliance and according working periods; router transmits control signals wirelessly to radio module installed in each appliance, to control each corresponding appliance run automatically in the working mode corresponding to the busiest working periods; the said controlling method and system operates simply, controls automatically without any manual operations, close to users' usage habits, and more humanized, it has freed a user's hands, avoided relying too much on mobile terminals, brought a great convenience to users.

Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.