Abstract: The present invention relates to an antibody against resistin and use thereof and, more specifically, to a resistin antibody or antigen-binding fragment thereof that inhibits the activity of resistin by blocking resistin/CAP1 binding, a nucleic acid encoding same, a vector comprising the nucleic acid, a cell transformed with the vector, a method for preparing the antibody or antigen-binding fragment thereof, an antibody-drug conjugate comprising the antibody or antigen-binding fragment thereof, a bi- or multi-specific antibody, a chimeric antigen receptor, an immune cell containing same, and a composition for the prevention or treatment of diseases that can be treated through the inhibition of resistin activity, the composition comprising same.

Abstract: Proposed are a substrate treatment system and a substrate treatment method. More particularly, a technology capable of realizing a fine etching adjustment and capable of increasing a Unit Per Equipment Hour (UPEH) by reducing time required for a process is provided.

Abstract: Proposed are a substrate treatment method and a substrate treatment system in which a cooling process with an improved cooling speed and an improved cooling efficiency is applied in a substrate treatment process using an upper heat source. A substrate treatment method etching a substrate at an atomic layer level by using a processing unit and a thermal treatment unit may be provided. The substrate treatment method includes a surface treatment process in which a substrate surface is modified in the processing unit, a desorption process in which the substrate surface-treated in the processing unit is heated by the upper heat source in the thermal treatment unit, thereby generating a desorption reaction on the substrate surface, and a temperature adjustment process in which the substrate is cooled by a cooling plate in the thermal treatment unit, thereby maintaining a temperature of the substrate at a set temperature range.

Abstract: A sacrificial passivation film deposition method according to an exemplary embodiment of the present disclosure may include: depositing a primary sacrificial passivation film on an entire surface of a substrate using a thermal ALD (T-ALD) process; and additionally depositing a secondary sacrificial passivation film on an upper surface and at least a portion of a side surface of an upper portion of the primary sacrificial passivation film using a plasma-ALD (P-ALD) process.

Abstract: A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member and a top electrode member disposed opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode pattern on the first plate and having a pattern.

Abstract: According to at least one aspect, the present disclosure provides a smart toy device that updates its growth stage based on the emotional state of the smart toy device and performs an expressive action corresponding to an interaction with a user in step with growth stages. According to another aspect, the present disclosure provides a smart toy system including a smart toy device, whose growth stage is updated based on the emotional state of the smart toy device, a terminal capable of transmitting and receiving messages in conjunction with the smart toy device, and a server that transmits, to the smart toy device, voice data and data related to a condition for changing the growth stage.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.

Abstract: An image sensor is provided. The image sensor may include a substrate including first and second surfaces opposite to each other, a device isolation layer extending through the substrate and having a surface level with the second surface of the substrate, an active region comprising first and second pixel regions spaced apart and separated from each other by the device isolation layer, a photoelectric device located in the substrate and configured to convert light into electric charges, a microlens on the first surface, a first select transistor and a first source follower transistor in the first pixel region, a second source follower transistor in the second pixel region, a first node between the first select transistor and the first source follower transistor, on the first pixel region, and a second node on one side of the first select transistor on the first pixel region.

Abstract: An image sensor is provided. The image sensor may include a substrate including first and second surfaces opposite to each other, a device isolation layer extending into the substrate and having a surface level with the second surface of the substrate, an active region defined by the device isolation layer, a photoelectric device located in the substrate and configured to convert light into electric charges, a microlens on the first surface, a transfer gate in the active region on the second surface and configured to transfer the electric charges to a floating diffusion node, and a source follower gate on the device isolation layer and on the active region.

Abstract: An image sensor according to inventive concepts includes a substrate including a first surface, a second surface opposite to the first surface, and a unit pixel having four sides; a photoelectric conversion device formed in the unit pixel; a floating diffusion region formed contacting the first surface in the unit pixel and overlapping with a center region of the photoelectric conversion device in a first direction perpendicular to the first surface; a gate electrode, in the unit pixel, overlapping with some portions of the floating diffusion region and formed along a first set of sides that comprises at least one side of the four sides; and a set of transistors, in the unit pixel, overlapping with some portions of the floating diffusion region and formed along a second set of sides that comprises at least two sides of the four sides, which are different from the first set of sides.

Abstract: An image sensor according to inventive concepts includes a substrate including a first surface, a second surface opposite to the first surface, and a unit pixel having four sides; a photoelectric conversion device formed in the unit pixel; a floating diffusion region formed contacting the first surface in the unit pixel and overlapping with a center region of the photoelectric conversion device in a first direction perpendicular to the first surface; a gate electrode, in the unit pixel, overlapping with some portions of the floating diffusion region and formed along a first set of sides that comprises at least one side of the four sides; and a set of transistors, in the unit pixel, overlapping with some portions of the floating diffusion region and formed along a second set of sides that comprises at least two sides of the four sides, which are different from the first set of sides.

Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.

Abstract: An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Abstract: A side view mirror having a rotatable housing comprises a cover plate mounted on an exterior of a vehicle body, wherein an inside and outside of the cover plate are divided based on the vehicle body. A stay includes a lever disposed at an inner side of the cover plate. An up/down/left/right angle adjusting part is integrated with a connection bar, connected to the lever through the connection bar, and configured to be movable in up/down and left/right directions with respect to an outer surface of the cover plate. A folding supporting part is integrated with the up/down/left/right angle adjusting part at the outer surface of the up/down/left/right angle adjusting part and connected to the mirror-integrated housing. A mirror-integrated housing is foldably or unfoldably coupled with the folding supporting part, and an angle of the mirror-integrated housing is adjusted in up/down and left/right directions by the up/down/left/right angle adjusting part.

Abstract: An image sensor includes a first photo detecting device disposed in a central region of a pixel array portion and a second photo detecting device disposed in an edge of the pixel array portion. The second photo detecting device has a full well capacity which is less than a full well capacity of the first photo detecting device. An imaging device includes the image sensor and an image signal process. The image signal processor compensates for a lens shading effect and a difference between the full well capacity of the first photo detecting device and the full well capacity of the second photo detecting device.

Abstract: An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.

Abstract: A side view mirror having a rotatable housing comprises a cover plate mounted on an exterior of a vehicle body, wherein an inside and outside of the cover plate are divided based on the vehicle body. A stay includes a lever disposed at an inner side of the cover plate. An up/down/left/right angle adjusting part is integrated with a connection bar, connected to the lever through the connection bar, and configured to be movable in up/down and left/right directions with respect to an outer surface of the cover plate. A folding supporting part is integrated with the up/down/left/right angle adjusting part at the outer surface of the up/down/left/right angle adjusting part and connected to the mirror-integrated housing. A mirror-integrated housing is foldably or unfoldably coupled with the folding supporting part, and an angle of the mirror-integrated housing is adjusted in up/down and left/right directions by the up/down/left/right angle adjusting part.