Patents by Inventor Dong Young JANG

Dong Young JANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240403281
    Abstract: Provided are a method of creating an index for blockchain data and a device and method for searching for blockchain data. The method of creating an index for blockchain data includes receiving, by a blockchain data search device, data to be stored in a blockchain network from a user application, requesting, by the blockchain data search device, the blockchain network to store the data and receiving a block number of a block in which the data is stored and a transaction identifier (ID) from the blockchain network when storage of the data is completed, and encrypting, by the blockchain data search device, the data and creating an index for the data on the basis of the encrypted data, the block number, and the transaction ID.
    Type: Application
    Filed: April 12, 2024
    Publication date: December 5, 2024
    Inventors: Dong Myung Sul, Ji Yong Kim, Mi Young Jang
  • Publication number: 20240387815
    Abstract: A cathode active material for a lithium secondary battery includes a lithium-nickel metal oxide particle having a form of a secondary particle in which a plurality of primary particles are aggregated therein. The lithium-nickel metal oxide particle includes a penetration region formed in an area extending from a surface to a point 70% or less of a radius of the particle in a direction to a center of the particle. The penetration region includes a tungsten compound at an interface between the primary particles. A relative standard deviation (RSD) value calculated from results of measuring a tungsten content from the surface of the secondary particle to a depth of 10 10 nm 10 times at different points using an X-ray Photoelectron Spectroscopy (XPS) is in a range from 10% to 40%.
    Type: Application
    Filed: April 30, 2024
    Publication date: November 21, 2024
    Inventors: Sang Min PARK, Oh Hun KWON, Sang Bok KIM, Dong Il JANG, Ji Hye JANG, Jae Young CHOI
  • Patent number: 12148501
    Abstract: The present technology includes a semiconductor memory device. The semiconductor memory device includes a first channel pattern and a second channel pattern each extending in a vertical direction and facing each other, a channel separation pattern formed between the first channel pattern and the second channel pattern and extending in the vertical direction, a stack including conductive patterns each surrounding the first channel pattern, the second channel pattern, and the channel separation pattern and stacked apart from each other in the vertical direction, a first memory pattern disposed between each of the conductive patterns and the first channel pattern, and a second memory pattern disposed between each of the conductive patterns and the second channel pattern.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: November 19, 2024
    Assignee: SK hynix Inc.
    Inventors: Jung Dal Choi, Jung Shik Jang, Jin Kook Kim, Dong Sun Sheen, Se Young Oh, Ki Hong Lee, Dong Hun Lee, Sung Hoon Lee, Sung Yong Chung
  • Publication number: 20240363328
    Abstract: Provided is a method and an apparatus for dry-cleaning an aluminum nitride (AlN) heater for semiconductor fabrication equipment, which may efficiently remove fluorine-containing contaminants generated on the AlN heater during semiconductor fabrication processes, and especially, may effectively and simultaneously remove organic, inorganic metallic, and inorganic contaminants. The method for dry-cleaning an AlN heater for semiconductor fabrication equipment includes steps of: determining a laser to be used for the AlN heater; determining laser control factors required for cleaning the AlN heater with respect to the laser to be used determined in the step of determining the laser to be used; and cleaning the AlN heater by laser irradiation based on the laser control factors determined in the step of determining the laser control factors.
    Type: Application
    Filed: April 16, 2024
    Publication date: October 31, 2024
    Applicant: WONIK QNC Corporation
    Inventors: Eun Young CHOI, Sang Hyun CHO, Seung Jin JUNG, Joo Hee JANG, So Young CHOI, Dong Ho SHIN, Jong Hwan MUN, Min Seob JUNG
  • Patent number: 12132110
    Abstract: Disclosed is a synaptic transistor, including a substrate, an expansion gate electrode disposed to extend in one direction on the substrate, a gate insulating layer including ions, covering the expansion gate electrode, and disposed on the substrate, a channel layer disposed on the gate insulating layer to correspond to one end of the expansion gate electrode, source and drain electrodes spaced apart from each other, covering both ends of the channel layer, and disposed on the gate insulating layer, and a pad electrode disposed on the gate insulating layer to correspond to the other end of the expansion gate electrode.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: October 29, 2024
    Assignee: KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: Dae Hwan Kim, Dong Yeon Kang, Jun Tae Jang, Shin Young Park, Hyun Kyu Lee, Sung Jin Choi, Dong Myoung Kim, Wonjung Kim
  • Publication number: 20240355376
    Abstract: A voltage generation circuit includes a voltage generation unit configured to generate a reference voltage using a power supply voltage and output the reference voltage through a voltage output node. The voltage generation circuit also includes a pre-charge unit configured to drive the voltage output node using the power supply voltage in response to a pre-charge control signal. The voltage generation circuit further includes a pre-charge control unit configured to generate at least one sampling voltage using the power supply voltage and generate the pre-charge control signal according to a result obtained by comparing the at least one sampling voltage with the reference voltage.
    Type: Application
    Filed: August 23, 2023
    Publication date: October 24, 2024
    Applicant: SK hynix Inc.
    Inventors: Jae Hyeong HONG, In Seok KONG, Bon Kwang KOO, Gwan Woo KIM, Heon Ki KIM, Beom Kyu SEO, Keun Seon AHN, Soon Sung AN, Sung Hwa OK, Jung Yeop LEE, Ji Young LEE, Dong Wook JANG, Jun Seo JANG, Sun Ki CHO, Eun Ji CHOI
  • Publication number: 20240341172
    Abstract: The present disclosure relates to an OLED that includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first host, a second host and a first blue dopant and positioned between the first and second electrodes, wherein the first host is an anthracene derivative, and the second host is a deuterated anthracene derivative.
    Type: Application
    Filed: June 14, 2024
    Publication date: October 10, 2024
    Applicant: LG DISPLAY CO., LTD.
    Inventors: In-Bum SONG, Seung-Hee YOON, Shin-Han KIM, So-Young JANG, Jin-Ho PARK, Dong-Hyeok LIM, Yoon-Deok HAN
  • Patent number: 12108674
    Abstract: A parallel thermoelectric module includes: first and second substrates spaced apart from each other; a plurality of first electrodes disposed on the first substrate; a plurality of second electrodes disposed on the second substrate; thermoelectric devices disposed in the first and second substrates to connect one of the first electrodes with one of the second electrodes and including a plurality of P and N type thermoelectric devices; electrode terminals including at least one positive electrode terminal and at least one negative electrode terminal disposed in at least one of the first and second substrates; and N parallel circuit units (N is a natural number of 2 or more) having an electrically parallel structure to each other in series. The plurality of first electrodes, the plurality of second electrodes, and the thermoelectric devices are arranged to connect N parallel circuit units.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: October 1, 2024
    Assignee: MI-SEOJIN, INC.
    Inventors: Seo Young Kim, Sung Hoon Park, Keun Hee Lee, Dong Hyun Jang
  • Publication number: 20240321580
    Abstract: A photomask manufacturing method includes defining a main region and a dummy region based on a layout data, wherein the main region corresponds to an outer boundary surrounding functional patterns defined by the layout data and the dummy region corresponds to an empty space outside the main region, and forming a dummy pattern to fill the dummy region. The forming of the dummy pattern includes placing at least one first pattern block in the dummy region to form a first sub-region, each of the at least one first pattern block having a first area, and placing, after completing the placing of the at least one first pattern block in the dummy region, at least one second pattern block in the dummy region except the first sub-region to form a second sub-region, each of the at least one second pattern block having a second area smaller than the first area.
    Type: Application
    Filed: December 1, 2023
    Publication date: September 26, 2024
    Inventors: Dong Jin PARK, Sung-Yong MOON, Jun Young JANG
  • Patent number: 12082494
    Abstract: The present disclosure relates to an OLED that includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first host, a second host and a first blue dopant and positioned between the first and second electrodes, wherein the first host is an anthracene derivative, and the second host is a deuterated anthracene derivative.
    Type: Grant
    Filed: December 21, 2019
    Date of Patent: September 3, 2024
    Assignee: LG Display Co., Ltd.
    Inventors: In-Bum Song, Seung-Hee Yoon, Shin-Han Kim, So-Young Jang, Jin-Ho Park, Dong-Hyeok Lim, Yoon-Deok Han
  • Publication number: 20240286559
    Abstract: An embodiment mounting and demounting device for a wireless electronic device includes a pair of holder wings arranged symmetrically to each other and configured to press both sides of the wireless electronic device, a holder wing adjusting device configured to apply a force to adjust a gap between the holder wings using a driving force of a drive motor, a lifting implementing device configured to interlock with the holder wing adjusting device to lift the wireless electronic device upward in a case in which the holder wings are spread apart by a predetermined reference gap or more, a lower housing wrapped around a lower side of the holder wings, the holder wing adjusting device, and the lifting implementing device, and an upper housing coupled to an upper side of the lower housing and configured to allow the wireless electronic device to pass through in an up and down direction.
    Type: Application
    Filed: November 13, 2023
    Publication date: August 29, 2024
    Inventors: Guk Mu Park, Dong Woo Jeong, Dong Ho Kang, Jung Sang You, Hyung Joo Kim, Hyeong Jong Kim, Seung Min Jeong, Seung Young Lee, Byung Jin Son, Han Su Yoo, Hyo Seop Cha, Young Gyu Song, Yun Chang Kim, Jae Sik Choi, Dae Hee Lee, Byung Yong Choi, Seon Chae Na, Sang Do Park, Eun Sue Kim, Yong Seong Jang, Eom Seok Yoo, Seung Young Lee, Jin Wook Choi
  • Publication number: 20240246961
    Abstract: The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.
    Type: Application
    Filed: January 23, 2024
    Publication date: July 25, 2024
    Inventors: Sung-Ku CHOI, Yoon-Suk LEE, Sung-Wook KWON, Kyung-Sun KIM, Jeong-Geun KIM, Jeong-Ah KIM, An-Na MOON, Sun-Young PARK, Jun-Su BAN, Dong-Keun SONG, Kyu-Sic JANG, Ju-Young JUNG, Soo-Jin LEE
  • Publication number: 20240222171
    Abstract: Proposed are a substrate treatment system and a substrate treatment method. More particularly, a technology capable of realizing a fine etching adjustment and capable of increasing a Unit Per Equipment Hour (UPEH) by reducing time required for a process is provided.
    Type: Application
    Filed: December 16, 2023
    Publication date: July 4, 2024
    Applicant: SEMES CO., LTD.
    Inventors: Young Eun JEON, Yun Sang KIM, Min Sung JEON, Tae Hwan LEE, Sung Min CHOI, Jin Hee HONG, Dong Young JANG, Young Jo JIN
  • Publication number: 20240203699
    Abstract: Proposed are a substrate treatment method and a substrate treatment system in which a cooling process with an improved cooling speed and an improved cooling efficiency is applied in a substrate treatment process using an upper heat source. A substrate treatment method etching a substrate at an atomic layer level by using a processing unit and a thermal treatment unit may be provided. The substrate treatment method includes a surface treatment process in which a substrate surface is modified in the processing unit, a desorption process in which the substrate surface-treated in the processing unit is heated by the upper heat source in the thermal treatment unit, thereby generating a desorption reaction on the substrate surface, and a temperature adjustment process in which the substrate is cooled by a cooling plate in the thermal treatment unit, thereby maintaining a temperature of the substrate at a set temperature range.
    Type: Application
    Filed: December 13, 2023
    Publication date: June 20, 2024
    Applicant: SEMES CO., LTD.
    Inventors: Young Jo JIN, Dong Young JANG, Yun Sang KIM, Min Sung JEON, Min Hee HONG, Young Seo PARK, Jeong Sik KIM
  • Publication number: 20240063025
    Abstract: A sacrificial passivation film deposition method according to an exemplary embodiment of the present disclosure may include: depositing a primary sacrificial passivation film on an entire surface of a substrate using a thermal ALD (T-ALD) process; and additionally depositing a secondary sacrificial passivation film on an upper surface and at least a portion of a side surface of an upper portion of the primary sacrificial passivation film using a plasma-ALD (P-ALD) process.
    Type: Application
    Filed: June 26, 2023
    Publication date: February 22, 2024
    Inventors: Jin Hee HONG, Yun Sang KIM, Min Sung JEON, Young Eun JEON, Sung Min CHOI, Young Jo JIN, Dong Young JANG
  • Publication number: 20230154730
    Abstract: A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.
    Type: Application
    Filed: July 15, 2022
    Publication date: May 18, 2023
    Inventors: Young Eun JEON, Yun Sang KIM, Min Sung JEON, Ji Heon KIM, Youngjo JIN, Jin Hee HONG, Sung Min CHOI, Dong Young JANG
  • Publication number: 20230060210
    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member and a top electrode member disposed opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode pattern on the first plate and having a pattern.
    Type: Application
    Filed: August 24, 2022
    Publication date: March 2, 2023
    Applicant: SEMES CO., LTD.
    Inventors: Min Sung JEON, Yun Sang KIM, Sung Min CHOI, Dong Young JANG
  • Publication number: 20230064390
    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.
    Type: Application
    Filed: August 25, 2022
    Publication date: March 2, 2023
    Applicant: SEMES CO., LTD.
    Inventors: Min Sung JEON, Yun Sang KIM, Sung Min CHOI, Dong Young JANG, Ji Heon KIM, Young Jo JIN
  • Publication number: 20230018066
    Abstract: According to at least one aspect, the present disclosure provides a smart toy device that updates its growth stage based on the emotional state of the smart toy device and performs an expressive action corresponding to an interaction with a user in step with growth stages. According to another aspect, the present disclosure provides a smart toy system including a smart toy device, whose growth stage is updated based on the emotional state of the smart toy device, a terminal capable of transmitting and receiving messages in conjunction with the smart toy device, and a server that transmits, to the smart toy device, voice data and data related to a condition for changing the growth stage.
    Type: Application
    Filed: November 23, 2020
    Publication date: January 19, 2023
    Inventors: Heui Yul NOH, Sun Haeng LEE, You Jung LEE, Dong Young JANG, Chan Nyeong YUN, Young Ha SHIN
  • Publication number: 20220415626
    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.
    Type: Application
    Filed: June 22, 2022
    Publication date: December 29, 2022
    Inventors: JIN HEE HONG, SUNG MIN CHOI, YUN SANG KIM, MIN SUNG JEON, YOUNG EUN JEON, DONG YOUNG JANG