Patents by Inventor Dong Yu He

Dong Yu He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8327230
    Abstract: A data structure for a flash memory and data reading/writing method thereof are disclosed. A 512 bytes data and a redundant code derived from the data encoded with a 6-bit error correcting code scheme are stored in a first sector and a second sector with sequential address in a block of the flash memory respectively. A logic block address information of this block is divided into two parts that are stored in the first sector and the second sector respectively.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: December 4, 2012
    Assignee: Realtek Semiconductor Corp.
    Inventors: Jian-Qiang Ni, Dong-Yu He, Chun-Ting Liao
  • Publication number: 20120110419
    Abstract: A data structure for a flash memory and data reading/writing method thereof are disclosed. A 512 bytes data and a redundant code derived from the data encoded with a 6-bit error correcting code scheme are stored in a first sector and a second sector with sequential address in a block of the flash memory respectively. A logic block address information of this block is divided into two parts that are stored in the first sector and the second sector respectively.
    Type: Application
    Filed: January 6, 2012
    Publication date: May 3, 2012
    Applicant: REALTEK SEMICONDUCTOR CORP.
    Inventors: Jian-Qiang Ni, Dong-Yu He, Chun-Ting Liao
  • Patent number: 8122303
    Abstract: A data structure for a flash memory and data reading/writing method thereof are disclosed. A 512 bytes data and a redundant code derived from the data encoded with a 6-bit error correcting code scheme are stored in a first sector and a second sector with sequential address in a block of the flash memory respectively. A logic block address information of this block is divided into two parts that are stored in the first sector and the second sector respectively.
    Type: Grant
    Filed: May 19, 2008
    Date of Patent: February 21, 2012
    Assignee: Realtek Semiconductor Corp.
    Inventors: Jian-Qiang Ni, Dong-Yu He, Chun-Ting Liao
  • Publication number: 20120026404
    Abstract: A saturation adjusting apparatus for processing a pixel, which has three color components each having a value falling within a range defined by upper and lower extreme values, of a RGB color model includes an extreme value controller and a component adjuster. The extreme value controller determines maximum and minimum extreme value thresholds for ensuring that the values of the color components of the pixel after undergoing linear color correction processing based on a correction indicator fall within the range defined by the upper and lower extreme values. The component adjuster includes a decision-making unit for choosing the correction indicator from a group of values which includes the maximum extreme value threshold, the minimum extreme value threshold, and a saturation setting. The component adjuster further includes a color corrector for performing linear color correction processing on the three color components of the pixel using the correction indicator.
    Type: Application
    Filed: July 29, 2011
    Publication date: February 2, 2012
    Applicant: Realtek Semiconductor Corp.
    Inventors: Li-Cong HOU, Dong-Yu HE, Hong-Hai DAI
  • Patent number: 8055983
    Abstract: A data writing method for flash memory and an error correction encoding/decoding method thereof are disclosed. In an embodiment of the data writing method, a 6-bit ECC scheme using a Reed-Solomon code derived from a Galois Field GF (29) is used to encode a data for generating a redundant which requires smaller storing space. In an embodiment of the error correction encoding/decoding method, an erase checking value corresponding to the status where all the bytes of data area and parameter storing area are “0xff” is provided to improve the security of stored data.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: November 8, 2011
    Assignee: Realtek Semiconductor Corp.
    Inventors: Jian Qiang Ni, Dong Yu He, Chun Ting Liao
  • Publication number: 20080294935
    Abstract: A data structure for a flash memory and data reading/writing method thereof are disclosed. A 512 bytes data and a redundant code derived from the data encoded with a 6-bit error correcting code scheme are stored in a first sector and a second sector with sequential address in a block of the flash memory respectively. A logic block address information of this block is divided into two parts that are stored in the first sector and the second sector respectively.
    Type: Application
    Filed: May 19, 2008
    Publication date: November 27, 2008
    Inventors: Jian-Qiang NI, Dong-Yu He, Chun-Ting Liao
  • Publication number: 20080294965
    Abstract: A data writing method for flash memory and an error correction encoding/decoding method thereof are disclosed. In an embodiment of the data writing method, a 6-bit ECC scheme using a Reed-Solomon code derived from a Galois Field GF (29) is used to encode a data for generating a redundant which requires smaller storing space. In an embodiment of the error correction encoding/decoding method, an erase checking value corresponding to the status where all the bytes of data area and parameter storing area are “0xff” is provided to improve the security of stored data.
    Type: Application
    Filed: May 23, 2008
    Publication date: November 27, 2008
    Applicant: Realtek Semiconductor Corp.
    Inventors: Jian-Qiang Ni, Dong-Yu He, Chun-Ting Liao
  • Publication number: 20080147966
    Abstract: The present invention discloses a flash memory device, an update method and program search method thereof. The flash memory device includes a read-only memory unit, a flash memory unit and a control unit. The read-only memory unit is used to store a first program code. The flash memory unit is used to store a second program code and digital data. The control unit coupled to the flash memory unit and the read-only memory unit is used to control the operation of the flash memory unit based on the first program code and the second program code. Hence, the upgrade time for the flash memory device can be shortened and the manufacture cost can be reduced.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 19, 2008
    Applicant: REALTEK SEMICONDUCTOR CORP.
    Inventors: Chun-Ting Liao, Dong-Yu He, Guang-Huan Zhao