Abstract: Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.

Abstract: Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract: Disclosed is a power converting device including: a first laminate having a plurality of non-magnetic substrates which are laminated; electronic devices disposed on at least one of the non-magnetic substrates; first conductive patterns disposed on the non-magnetic substrate on which the electronic devices are disposed, the first conductive patterns being connected to the electronic devices; at least one via electrode connecting the respective first conductive patterns to each other; a second laminate disposed on one side of the first laminate and having a plurality of magnetic sheets which are laminated; second conductive patterns disposed on at least two magnetic sheets among the plurality of magnetic sheets; and at least one via electrode connecting the respective second conductive patterns to each other, wherein the first and second via electrodes are connected to each other.

Abstract: Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure.

Abstract: The present disclosure relates to a pre-5th-generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-generation (4G) communication system such as long term evolution (LTE). An electronic device is provided in a wireless communication system. The device comprises a plurality of antenna sets; a plurality of antenna elements configuring the plurality of antenna sets; an RF transceiver including a plurality of switches for selecting the plurality of antenna elements and a plurality of phase shifters for shifting the phase of a signal transmitted/received through the plurality of antenna elements; and a control unit for determining a beam forming direction and the phase of the signal by simultaneously controlling the plurality of switches and the plurality of phase shifters according to a beambook.

Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

Abstract: The present invention relates to a method and an apparatus for direct current offset calibration of a direct conversion receiver, a Direct Current (DC) offset calibration apparatus of a direct conversion receiver includes a plurality of variable gain amplifiers for amplifying an input signal based on a gain control value, a DC offset monitoring unit for monitoring a DC offset for an output signal of the plurality of variable gain amplifiers, a plurality of variable Digital to Analog Converters (DACs) for controlling a current applied to each of the plurality of variable gain amplifiers according to a current control code, and a DC offset cancellation unit for determining a current control code set which minimizes the DC offset value per preset gain control value, and thus the DC offset can be precisely cancelled without being affected by external factors such as a signal modulation method and heat and performance degradation of the receiver can be prevented.

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Abstract: An electronic device for beamforming and a method thereof in a wireless communication system are provided. The electronic device includes a plurality of antennas. The electronic device also includes a plurality of transmitter and receiver switches connected to the antennas and configured to select a plurality of transmission paths and a plurality of reception paths. The electronic device further includes a plurality of first Phase Shifters (P/Ss) configured to shift a phase of Radio Frequency (RF) signals received via the antennas and the transmitter and receiver switches. The electronic device includes a combiner configured to combine the phase-shifted RF signals to one RF signal. The electronic device also includes a quadrature signal generator configured to generate a quadrature signal. The electronic device further includes a down-mixer configured to convert the quadrature signal and the combined RF signal to a first baseband signal and configured to output the first baseband signal to a modem.

Abstract: An electronic device for beamforming and a method thereof in a wireless communication system are provided. The electronic device includes a plurality of antennas. The electronic device also includes a plurality of transmitter and receiver switches connected to the antennas and configured to select a plurality of transmission paths and a plurality of reception paths. The electronic device further includes a plurality of first Phase Shifters (P/Ss) configured to shift a phase of Radio Frequency (RF) signals received via the antennas and the transmitter and receiver switches. The electronic device includes a combiner configured to combine the phase-shifted RF signals to one RF signal. The electronic device also includes a quadrature signal generator configured to generate a quadrature signal. The electronic device further includes a down-mixer configured to convert the quadrature signal and the combined RF signal to a first baseband signal and configured to output the first baseband signal to a modem.

Abstract: An apparatus for a single chip package using Land Grid Array (LGA) coupling is provided. The apparatus includes a multi-layer substrate, at least one integrated circuit chip, and a Printed Circuit Board (PCB). The a multi-layer substrate has at least one substrate layer, has at least one first chip region and at least one second chip region in a lowermost substrate layer, configures a transmission line transition of a vertical structure for transmitting a signal from at least one integrated circuit chip coupled in the first chip region in a coaxial shape or in a form of a Co-Planar Waveguide guide (CPW), and has an LGP coupling pad for connecting with a Printed Circuit Board (PCB) in the lowermost layer. The at least one integrated circuit chip is coupled in the first chip region and the second chip region. The PCB is connected with the multi-layer substrate using the LGA coupling via the LGA coupling pad.

Abstract: A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.

Abstract: A wireless communication module includes a plurality of monolithic millimeter-wave integrated circuits (MMICs) for signal processing attached to the top surface of a multi-layer low temperature co-fired ceramic substrate; a planar transmission line formed on the top surface of the multi-layer substrate for communications between the MMICs; a metal base attached to the bottom surface of the multi-layer substrate and having an opening to which an antenna is attached; a plurality of vias for connecting the metal base and the planar transmission line within the multi-layer substrate to establish a uniform potential on a ground plane of the multi-layer substrate; an embedded waveguide formed in the opening surrounded with the vias within the multi-layer substrate; and a planar transmission line-to-waveguide transition apparatus for the transition of waves between the planar transmission line and the embedded waveguide.

Abstract: A phase shifter includes a substrate; a signal line formed on a specific region in an upper surface of the substrate; and an air gap which is formed within the substrate and changes effective permittivity of the substrate to delay phase of a signal supplied to the signal line. The phase shifter delays a phase of a signal by controlling effective permittivity using an air gap, thereby having outstandingly low insertion loss as compared to existing phase shifters. Further, the phase shifter can be manufactured in a same length as a reference line so that the phase shifter can be in a compact size.

Abstract: A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Abstract: A transimpedance amplification apparatus includes a signal source for generating a current signal, a source follower stage, a common source stage and a shunt feedback resistor. The source follower stage having a source follower structure receives the current signal to reduce an impedance of the signal source. The common source stage, following the source follower stage, driven by the reduced signal source impedance, amplifies the current signal to extend a frequency bandwidth of the current signal and buffers the amplified signal with the extended frequency bandwidth thereof maintained, wherein the reduced signal source impedance serves to extend a frequency bandwidth of the common source stage. The shunt feedback resistor, which is installed between the source follower stage and the common source stage, adjusts an input DC bias of the source follower stage and increasing a transimpedance gain of the common source stage.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.