Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: Provided are method and apparatus for transferring graphene. The graphene transferring method includes: a graphene synthesizing operation comprising forming at least one layer of graphene on at least one surface of a catalyst metal film; a substrate film attaching operation comprising contacting an adhesive first surface of the substrate film to the at least one layer of graphene and compressing the catalyst metal film and the substrate film by using a first roller; and a substrate film separating operation comprising separating the substrate film from the catalyst metal film such that the at least one layer of graphene is separated from the catalyst metal film together with the substrate film.

Abstract: A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.

Abstract: Provided is a method of post treating graphene including providing graphene on a metal thin film, providing a carrier on the graphene, hardening the carrier, and removing the metal thin film from the graphene.

Abstract: An apparatus and method for inspecting a graphene board. The graphene board inspecting apparatus for inspecting a graphene board on which at least one graphene layer is formed includes: a light processing unit which emits at least one light on the graphene board, receives the at least one light penetrating the graphene board and converts the received at least one light to an output signal; a transmittance detecting unit which receives the output signal from the light processing unit to inspect a transmittance of the at least one light penetrating the graphene board; and a determination unit which is connected to the transmittance detecting unit and receives the detected transmittance to determine a state of the graphene board by analyzing the detected transmittance.

Abstract: An apparatus and method for inspecting a graphene board. The graphene board inspecting apparatus for inspecting a graphene board on which at least one graphene layer is formed includes: a light processing unit which emits at least one light on the graphene board, receives the at least one light penetrating the graphene board and converts the received at least one light to an output signal; a transmittance detecting unit which receives the output signal from the light processing unit to inspect a transmittance of the at least one light penetrating the graphene board; and a determination unit which is connected to the transmittance detecting unit and receives the detected transmittance to determine a state of the graphene board by analyzing the detected transmittance.

Abstract: Provided are method and apparatus for transferring graphene. The graphene transferring method includes: a graphene synthesizing operation comprising forming at least one layer of graphene on at least one surface of a catalyst metal film; a substrate film attaching operation comprising contacting an adhesive first surface of the substrate film to the at least one layer of graphene and compressing the catalyst metal film and the substrate film by using a first roller; and a substrate film separating operation comprising separating the substrate film from the catalyst metal film such that the at least one layer of graphene is separated from the catalyst metal film together with the substrate film.

Abstract: Provided is a method of post treating graphene including providing graphene on a metal thin film, providing a carrier on the graphene, hardening the carrier, and removing the metal thin film from the graphene.

Abstract: A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.

Abstract: A method of transferring graphene, the method including: preparing a graphene forming structure including a base member, an oxide layer that is hydrophilic and is formed on the base member, a metal catalyst layer that is hydrophobic and is formed on the oxide layer, and graphene that is formed on the metal catalyst layer; attaching the graphene forming structure on a surface of a first carrier; separating the oxide layer from the metal catalyst layer by applying steam to the graphene forming structure; and removing the metal catalyst layer.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: A method of fabricating multi-layered graphene includes disposing a first graphene layer on a carrier; disposing at least one second graphene layer on the first graphene layer to form a graphene sheet disposed on the carrier; and transferring the graphene sheet disposed on the carrier onto a substrate, wherein each of the graphene layers which constitute the graphene sheet has at least one damaged region, and the at least one damaged region of each of the graphene layers contacts at least one of non-damaged regions of a graphene layer or graphene layers, of the graphene layers, contacting the each of the graphene layers.

Abstract: Provided are a method and apparatus of manufacturing high quality large area graphene in large quantities. The method includes placing a supporting belt, on which a catalyst layer is loaded, into a chamber; increasing a temperature of the catalyst layer by injecting a carbon source into the chamber; forming graphene on the catalyst layer by cooling the catalyst layer; and taking out the supporting belt, on which the catalyst layer, on which the graphene is formed, is loaded, from the chamber to an outside, wherein a ratio between a melting point of the supporting belt and a maximum temperature Tmax of the catalyst metal layer that the catalyst layer is heated in the chamber is equal to or less than 0.6.