Patents by Inventor Dongli Zhang

Dongli Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240151687
    Abstract: Provided are a solution detection circuit and apparatus, a driving method and a solution detection method. The solution detection circuit includes at least one detection unit, the detection unit includes an ion-sensitive field-effect transistor, a first reset switch subunit, a synchronous buck switch subunit, a storage capacitor and an output switch subunit. A threshold voltage of the ion-sensitive field-effect transistor can be directly read.
    Type: Application
    Filed: January 16, 2024
    Publication date: May 9, 2024
    Applicant: Shanghai Tianma Microelectronics Co., Ltd.
    Inventors: Wei LI, Kaidi ZHANG, Dongli ZHANG, Liying WANG, Baiquan LIN, Juntao PAN
  • Publication number: 20240115640
    Abstract: A method for preparing ginseng extract rich in rare ginsenosides is disclosed. Ginseng roots or ginseng stems and leaves are extracted, enzymatically hydrolyzed and treated with high temperature and high pressure. The preparation method can quickly and effectively increase the proportion of rare ginsenosides in the ginseng extract. After in vitro antioxidant experiments and in vivo experiments with Hidradenitis elegans nematode, the extract and related complexes were proved to be effective in antioxidant, anti-oxidative stress, and improving age-related muscle decline and other dysfunctions. After genetic and metabolomic studies, the anti-aging mechanism was proved to be related to the expression of genes associated with nutrient sensing, stress-related pathways and redox processes, and showed innate immune response and redox process GO enrichment, proving its oxidative stress resistance.
    Type: Application
    Filed: December 19, 2023
    Publication date: April 11, 2024
    Inventors: Shengcan Zou, Dongli Yin, Jinli Chen, Jinli Liu, Decui Yin, Haijun Zhang
  • Publication number: 20240100116
    Abstract: The present invention belongs to the field of drug preparation and detection, and particularly discloses a preparation method for a Eucommia ulmoides Oliv. leaf extract. The extract is obtained from Eucommia ulmoides Oliv. leaves (the mixture of the Eucommia ulmoides Oliv. leaves and Eucommia ulmoides Oliv. male flower) by enzymolysis and extraction of ethanol and water, and can effectively solve the problem that the extract is not easy to spray dry (the Eucommia ulmoides Oliv. leaves contain colloidal substances). The pharmacodynamic experiment proves that the Eucommia ulmoides Oliv. leaf extract has good effect of protecting the health of the renal function. The present invention also develops a detection method for the extract, which not only realizes the quality control of the extract, but also has the advantages of good repeatability and stability.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 28, 2024
    Inventors: Shengcan Zou, Jinli Liu, Weixia Wang, Dongli Yin, Haijun Zhang, Decui Yin, Shuang Feng
  • Patent number: 11908935
    Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: February 20, 2024
    Assignee: Soochow University
    Inventors: Mingxiang Wang, Jinfeng Zhao, Dongli Zhang, Huaisheng Wang
  • Publication number: 20230223466
    Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.
    Type: Application
    Filed: December 1, 2021
    Publication date: July 13, 2023
    Inventors: Mingxiang Wang, Lekai Chen, Dongli Zhang, Huaisheng Wang
  • Publication number: 20230120523
    Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.
    Type: Application
    Filed: May 26, 2020
    Publication date: April 20, 2023
    Inventors: Mingxiang Wang, Jinfeng Zhao, Dongli Zhang, Huaisheng Wang
  • Patent number: 11474011
    Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: October 18, 2022
    Assignee: SOOCHOW UNIVERSITY
    Inventors: Mingxiang Wang, Wei Jiang, Dongli Zhang, Huaisheng Wang, Ming Wu, Nannan Lv
  • Patent number: 11442097
    Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: September 13, 2022
    Assignee: Soochow University
    Inventors: Mingxiang Wang, Yanyan Chen, Dongli Zhang, Huaisheng Wang
  • Publication number: 20210405107
    Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 30, 2021
    Inventors: Mingxiang Wang, Yanyan Chen, Dongli Zhang, Huaisheng Wang
  • Patent number: 11060500
    Abstract: The present invention discloses a ducted bidirectional tidal current power station system, mainly consisting of a bidirectional tidal current power generation device, a dam, an open sea, an inland sea, a duct, and an opening/closing gate. The bidirectional tidal current power generation device is installed in the duct on the bottom of the dam. Openings, respectively communicated with the open sea and the inland sea, are formed at two ends of the duct, and an opening/closing gate is arranged at each of the two openings. By the ducted bidirectional tidal current power station system of the present invention, the cost of marine construction, operation and maintenance of the tidal current power generation device in an open sea area is saved, and the complex structure of the power generation device in the tidal power station and the cost of strict construction of auxiliary devices and runners are avoided.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: July 13, 2021
    Assignee: HangZhou JiangHe Hydro-Electrical Sci. & Tech. Co.
    Inventors: Liwei Chen, Changlu Liu, Jianfeng Yu, Dongli Zhang, Yinhua Chen, Qianqian Li, Yujuan Wang, Jinbo Hu
  • Publication number: 20210139702
    Abstract: The present invention discloses a liquid silicone rubber (LSR) and a preparation method thereof. The present invention comprises composition A and composition B at a weight ratio of (1:1) to (1:10), where composition A includes vinyl silicone oil, platinum catalyst, hexagonal boron nitride particles, and mechanical reinforcing agent, and composition B includes vinyl silicone oil, hydrogen-containing silicone oil, alkyne inhibitor, and hexagonal boron nitride particles. The LSR prepared by this method has excellent electrical insulation and thermal conductivity, exhibits a significant improvement in both thermal conductivity and electrical insulation, and has a breakdown strength of 42 kV/mm, and a thermal conductivity of 0.96 W·m?1·K?1 that increases by 557% compared to that of a pure LSR.
    Type: Application
    Filed: June 24, 2020
    Publication date: May 13, 2021
    Inventors: Zhimin DANG, Dongli ZHANG, Wenqing MEI, Sijiao WANG, Qikun FENG, Qunxin LIU
  • Publication number: 20200393349
    Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.
    Type: Application
    Filed: January 17, 2018
    Publication date: December 17, 2020
    Inventors: Mingxiang WANG, Wei JIANG, Dongli ZHANG, Huaisheng WANG, Ming WU, Nannan LV
  • Publication number: 20200132041
    Abstract: The present invention discloses a ducted bidirectional tidal current power station system, mainly consisting of a bidirectional tidal current power generation device, a dam, an open sea, an inland sea, a duct, and an opening/closing gate. The bidirectional tidal current power generation device is installed in the duct on the bottom of the dam. Openings, respectively communicated with the open sea and the inland sea, are formed at two ends of the duct, and an opening/closing gate is arranged at each of the two openings. By the ducted bidirectional tidal current power station system of the present invention, the cost of marine construction, operation and maintenance of the tidal current power generation device in an open sea area is saved, and the complex structure of the power generation device in the tidal power station and the cost of strict construction of auxiliary devices and runners are avoided.
    Type: Application
    Filed: August 30, 2019
    Publication date: April 30, 2020
    Inventors: Liwei CHEN, Changlu LIU, Jianfeng YU, Dongli ZHANG, Yinhua CHEN, Qianqian LI, Yujuan WANG, Jinbo HU
  • Publication number: 20160336460
    Abstract: A thin-film transistor includes a substrate, a semiconductor channel region, a gate insulating layer, a source region, a drain region, a source electrode, a drain electrode and a gate electrode. The thin-film transistor also includes a carrier injection terminal, and the carrier injection terminal can provide the semiconductor channel region with a carrier of which the polarity is opposite to that of a channel carrier when the thin-film transistor is conducting. The thin-film transistor can significantly reduce device degradation and threshold voltage shift caused by a dynamic hot carrier effect, thereby improving the reliability of a thin-film transistor device and a circuit and simplifying the complexity of the design of a threshold voltage compensation circuit. In addition, the thin-film transistor has low processing difficulty and has no influence on the normal operation of a device.
    Type: Application
    Filed: August 15, 2014
    Publication date: November 17, 2016
    Inventors: Mingxiang WANG, Huaisheng WANG, Dongli ZHANG
  • Patent number: 8754416
    Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.
    Type: Grant
    Filed: November 24, 2006
    Date of Patent: June 17, 2014
    Assignee: The Hong Hong University of Science and Technology
    Inventors: Hoi-Sing Kwok, Man Wong, Zhiguo Meng, Dongli Zhang, Jiaxin Sun, Xiuling Zhu
  • Patent number: 8222646
    Abstract: A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C.
    Type: Grant
    Filed: June 26, 2006
    Date of Patent: July 17, 2012
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Man Wong, Hoi Sing Kwok, Dongli Zhang
  • Patent number: 8088676
    Abstract: Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: January 3, 2012
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Man Wong, Hoi-Sing Kwok, Zhiguo Meng, Dongli Zhang, Xuejie Shi
  • Publication number: 20080203394
    Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.
    Type: Application
    Filed: November 24, 2006
    Publication date: August 28, 2008
    Inventors: Hoi-Sing Kwok, Man Wong, Zhiguo Meng, Dongli Zhang, Jiaxin Sun, Xiuling Zhu
  • Publication number: 20070007530
    Abstract: A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C.
    Type: Application
    Filed: June 26, 2006
    Publication date: January 11, 2007
    Inventors: Man Wong, Hoi Kwok, Dongli Zhang
  • Publication number: 20060263957
    Abstract: Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.
    Type: Application
    Filed: April 27, 2006
    Publication date: November 23, 2006
    Applicant: The Hong Kong University of Science and Technology
    Inventors: Man Wong, Hoi-Sing Kwok, Zhiguo Meng, Dongli Zhang, Xuejie Shi