Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.

Abstract: The present invention discloses a field effect transistor device with a blocking region, which aims to address the problem of short channel effects of a field effect transistor in the prior art. The field effect transistor device includes an active layer, the active layer including a source region, a drain region and a channel region located between the source region and the drain region, wherein the channel region is provided with a carrier blocking region. The carrier blocking region serves to block carriers moving from the source region to the drain region when the device is turned off.

Abstract: Provided circuit structure includes a first voltage division branch and a second voltage division branch. The first voltage division branch includes a first control terminal and a first voltage division output terminal, and the second voltage division branch includes a second control terminal and a second voltage division output terminal. The first control terminal of the first voltage division branch receives a first initial signal V0, and the first voltage division output terminal is electrically connected to the second control terminal of the second voltage division branch. At a first pulse level stage, the second voltage division output terminal outputs a first output level signal, and at a second pulse level stage, the second voltage division output terminal outputs a second output level signal different from the first output level signal.

Abstract: The present invention discloses an equivalent source and drain region optimized field-effect transistor device for solving the problem of short-channel effects of a field-effect transistor in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region and a channel region located between the source region and the drain region; when the device is on, an effective channel and an equivalent source region and an equivalent drain region away from the effective channel at least in the thickness direction of the channel region are formed in the channel region, and the field-effect transistor device communicates the source region and the drain region via the effective channel and the equivalent source region and the equivalent drain region to contribute a working current, wherein the length of the equivalent source region is greater than that of the equivalent drain region.

Abstract: Driving circuit, microfluidic driving device and driving method are provided. The driving circuit includes a data writing module, a first inverter and a second inverter. An output terminal of the data writing module is connected to a first node. A first terminal of the first inverter is connected to a first power supply terminal, a second terminal of the first inverter is connected to a second power supply terminal, an input terminal of the first inverter is connected to the first node, and an output terminal of the first inverter is connected to a second node. A first terminal of the second inverter is connected to the first power supply terminal, a second terminal of the second inverter is connected to the second power supply terminal, and an input terminal of the second inverter is connected to the second node.

Abstract: The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; and a gate insulating layer provided between the gate and the channel region; wherein when a device is turned on, an effective channel, and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region through the effective channel, and the equivalent source and/or equivalent drain to contribute an operating current.

Abstract: Provided are a solution detection circuit and apparatus, a driving method and a solution detection method. The solution detection circuit includes at least one detection unit, the detection unit includes an ion-sensitive field-effect transistor, a first reset switch subunit, a synchronous buck switch subunit, a storage capacitor and an output switch subunit. A threshold voltage of the ion-sensitive field-effect transistor can be directly read.

Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.

Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.

Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.

Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.

Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.

Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.

Abstract: The present invention discloses a ducted bidirectional tidal current power station system, mainly consisting of a bidirectional tidal current power generation device, a dam, an open sea, an inland sea, a duct, and an opening/closing gate. The bidirectional tidal current power generation device is installed in the duct on the bottom of the dam. Openings, respectively communicated with the open sea and the inland sea, are formed at two ends of the duct, and an opening/closing gate is arranged at each of the two openings. By the ducted bidirectional tidal current power station system of the present invention, the cost of marine construction, operation and maintenance of the tidal current power generation device in an open sea area is saved, and the complex structure of the power generation device in the tidal power station and the cost of strict construction of auxiliary devices and runners are avoided.

Abstract: The present invention discloses a liquid silicone rubber (LSR) and a preparation method thereof. The present invention comprises composition A and composition B at a weight ratio of (1:1) to (1:10), where composition A includes vinyl silicone oil, platinum catalyst, hexagonal boron nitride particles, and mechanical reinforcing agent, and composition B includes vinyl silicone oil, hydrogen-containing silicone oil, alkyne inhibitor, and hexagonal boron nitride particles. The LSR prepared by this method has excellent electrical insulation and thermal conductivity, exhibits a significant improvement in both thermal conductivity and electrical insulation, and has a breakdown strength of 42 kV/mm, and a thermal conductivity of 0.96 W·m?1·K?1 that increases by 557% compared to that of a pure LSR.

Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.

Abstract: The present invention discloses a ducted bidirectional tidal current power station system, mainly consisting of a bidirectional tidal current power generation device, a dam, an open sea, an inland sea, a duct, and an opening/closing gate. The bidirectional tidal current power generation device is installed in the duct on the bottom of the dam. Openings, respectively communicated with the open sea and the inland sea, are formed at two ends of the duct, and an opening/closing gate is arranged at each of the two openings. By the ducted bidirectional tidal current power station system of the present invention, the cost of marine construction, operation and maintenance of the tidal current power generation device in an open sea area is saved, and the complex structure of the power generation device in the tidal power station and the cost of strict construction of auxiliary devices and runners are avoided.

Abstract: A thin-film transistor includes a substrate, a semiconductor channel region, a gate insulating layer, a source region, a drain region, a source electrode, a drain electrode and a gate electrode. The thin-film transistor also includes a carrier injection terminal, and the carrier injection terminal can provide the semiconductor channel region with a carrier of which the polarity is opposite to that of a channel carrier when the thin-film transistor is conducting. The thin-film transistor can significantly reduce device degradation and threshold voltage shift caused by a dynamic hot carrier effect, thereby improving the reliability of a thin-film transistor device and a circuit and simplifying the complexity of the design of a threshold voltage compensation circuit. In addition, the thin-film transistor has low processing difficulty and has no influence on the normal operation of a device.

Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

Abstract: A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C.