Patents by Inventor Dongli Zhang
Dongli Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240151687Abstract: Provided are a solution detection circuit and apparatus, a driving method and a solution detection method. The solution detection circuit includes at least one detection unit, the detection unit includes an ion-sensitive field-effect transistor, a first reset switch subunit, a synchronous buck switch subunit, a storage capacitor and an output switch subunit. A threshold voltage of the ion-sensitive field-effect transistor can be directly read.Type: ApplicationFiled: January 16, 2024Publication date: May 9, 2024Applicant: Shanghai Tianma Microelectronics Co., Ltd.Inventors: Wei LI, Kaidi ZHANG, Dongli ZHANG, Liying WANG, Baiquan LIN, Juntao PAN
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Patent number: 11908935Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.Type: GrantFiled: May 26, 2020Date of Patent: February 20, 2024Assignee: Soochow UniversityInventors: Mingxiang Wang, Jinfeng Zhao, Dongli Zhang, Huaisheng Wang
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Publication number: 20230223466Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.Type: ApplicationFiled: December 1, 2021Publication date: July 13, 2023Inventors: Mingxiang Wang, Lekai Chen, Dongli Zhang, Huaisheng Wang
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Publication number: 20230120523Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.Type: ApplicationFiled: May 26, 2020Publication date: April 20, 2023Inventors: Mingxiang Wang, Jinfeng Zhao, Dongli Zhang, Huaisheng Wang
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Patent number: 11474011Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.Type: GrantFiled: January 17, 2018Date of Patent: October 18, 2022Assignee: SOOCHOW UNIVERSITYInventors: Mingxiang Wang, Wei Jiang, Dongli Zhang, Huaisheng Wang, Ming Wu, Nannan Lv
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Patent number: 11442097Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.Type: GrantFiled: June 10, 2019Date of Patent: September 13, 2022Assignee: Soochow UniversityInventors: Mingxiang Wang, Yanyan Chen, Dongli Zhang, Huaisheng Wang
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Publication number: 20210405107Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.Type: ApplicationFiled: June 10, 2019Publication date: December 30, 2021Inventors: Mingxiang Wang, Yanyan Chen, Dongli Zhang, Huaisheng Wang
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Patent number: 11060500Abstract: The present invention discloses a ducted bidirectional tidal current power station system, mainly consisting of a bidirectional tidal current power generation device, a dam, an open sea, an inland sea, a duct, and an opening/closing gate. The bidirectional tidal current power generation device is installed in the duct on the bottom of the dam. Openings, respectively communicated with the open sea and the inland sea, are formed at two ends of the duct, and an opening/closing gate is arranged at each of the two openings. By the ducted bidirectional tidal current power station system of the present invention, the cost of marine construction, operation and maintenance of the tidal current power generation device in an open sea area is saved, and the complex structure of the power generation device in the tidal power station and the cost of strict construction of auxiliary devices and runners are avoided.Type: GrantFiled: August 30, 2019Date of Patent: July 13, 2021Assignee: HangZhou JiangHe Hydro-Electrical Sci. & Tech. Co.Inventors: Liwei Chen, Changlu Liu, Jianfeng Yu, Dongli Zhang, Yinhua Chen, Qianqian Li, Yujuan Wang, Jinbo Hu
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Publication number: 20210139702Abstract: The present invention discloses a liquid silicone rubber (LSR) and a preparation method thereof. The present invention comprises composition A and composition B at a weight ratio of (1:1) to (1:10), where composition A includes vinyl silicone oil, platinum catalyst, hexagonal boron nitride particles, and mechanical reinforcing agent, and composition B includes vinyl silicone oil, hydrogen-containing silicone oil, alkyne inhibitor, and hexagonal boron nitride particles. The LSR prepared by this method has excellent electrical insulation and thermal conductivity, exhibits a significant improvement in both thermal conductivity and electrical insulation, and has a breakdown strength of 42 kV/mm, and a thermal conductivity of 0.96 W·m?1·K?1 that increases by 557% compared to that of a pure LSR.Type: ApplicationFiled: June 24, 2020Publication date: May 13, 2021Inventors: Zhimin DANG, Dongli ZHANG, Wenqing MEI, Sijiao WANG, Qikun FENG, Qunxin LIU
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Publication number: 20200393349Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.Type: ApplicationFiled: January 17, 2018Publication date: December 17, 2020Inventors: Mingxiang WANG, Wei JIANG, Dongli ZHANG, Huaisheng WANG, Ming WU, Nannan LV
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Publication number: 20200132041Abstract: The present invention discloses a ducted bidirectional tidal current power station system, mainly consisting of a bidirectional tidal current power generation device, a dam, an open sea, an inland sea, a duct, and an opening/closing gate. The bidirectional tidal current power generation device is installed in the duct on the bottom of the dam. Openings, respectively communicated with the open sea and the inland sea, are formed at two ends of the duct, and an opening/closing gate is arranged at each of the two openings. By the ducted bidirectional tidal current power station system of the present invention, the cost of marine construction, operation and maintenance of the tidal current power generation device in an open sea area is saved, and the complex structure of the power generation device in the tidal power station and the cost of strict construction of auxiliary devices and runners are avoided.Type: ApplicationFiled: August 30, 2019Publication date: April 30, 2020Inventors: Liwei CHEN, Changlu LIU, Jianfeng YU, Dongli ZHANG, Yinhua CHEN, Qianqian LI, Yujuan WANG, Jinbo HU
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Publication number: 20160336460Abstract: A thin-film transistor includes a substrate, a semiconductor channel region, a gate insulating layer, a source region, a drain region, a source electrode, a drain electrode and a gate electrode. The thin-film transistor also includes a carrier injection terminal, and the carrier injection terminal can provide the semiconductor channel region with a carrier of which the polarity is opposite to that of a channel carrier when the thin-film transistor is conducting. The thin-film transistor can significantly reduce device degradation and threshold voltage shift caused by a dynamic hot carrier effect, thereby improving the reliability of a thin-film transistor device and a circuit and simplifying the complexity of the design of a threshold voltage compensation circuit. In addition, the thin-film transistor has low processing difficulty and has no influence on the normal operation of a device.Type: ApplicationFiled: August 15, 2014Publication date: November 17, 2016Inventors: Mingxiang WANG, Huaisheng WANG, Dongli ZHANG
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Patent number: 8754416Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.Type: GrantFiled: November 24, 2006Date of Patent: June 17, 2014Assignee: The Hong Hong University of Science and TechnologyInventors: Hoi-Sing Kwok, Man Wong, Zhiguo Meng, Dongli Zhang, Jiaxin Sun, Xiuling Zhu
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Patent number: 8222646Abstract: A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C.Type: GrantFiled: June 26, 2006Date of Patent: July 17, 2012Assignee: The Hong Kong University of Science and TechnologyInventors: Man Wong, Hoi Sing Kwok, Dongli Zhang
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Patent number: 8088676Abstract: Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.Type: GrantFiled: April 27, 2006Date of Patent: January 3, 2012Assignee: The Hong Kong University of Science and TechnologyInventors: Man Wong, Hoi-Sing Kwok, Zhiguo Meng, Dongli Zhang, Xuejie Shi
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Publication number: 20080203394Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.Type: ApplicationFiled: November 24, 2006Publication date: August 28, 2008Inventors: Hoi-Sing Kwok, Man Wong, Zhiguo Meng, Dongli Zhang, Jiaxin Sun, Xiuling Zhu
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Publication number: 20070007530Abstract: A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C.Type: ApplicationFiled: June 26, 2006Publication date: January 11, 2007Inventors: Man Wong, Hoi Kwok, Dongli Zhang
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Publication number: 20060263957Abstract: Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.Type: ApplicationFiled: April 27, 2006Publication date: November 23, 2006Applicant: The Hong Kong University of Science and TechnologyInventors: Man Wong, Hoi-Sing Kwok, Zhiguo Meng, Dongli Zhang, Xuejie Shi