Patents by Inventor Dongli Zhang

Dongli Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
    Patent number: 8088676
    Abstract: Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: January 3, 2012
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Man Wong, Hoi-Sing Kwok, Zhiguo Meng, Dongli Zhang, Xuejie Shi
  • Method for fabrication of active-matrix display panels
    Publication number: 20080203394
    Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.
    Type: Application
    Filed: November 24, 2006
    Publication date: August 28, 2008
    Inventors: Hoi-Sing Kwok, Man Wong, Zhiguo Meng, Dongli Zhang, Jiaxin Sun, Xiuling Zhu
  • Thin-film transistors with metal source and drain and methods of fabrication
    Publication number: 20070007530
    Abstract: A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250° C. and 500° C.
    Type: Application
    Filed: June 26, 2006
    Publication date: January 11, 2007
    Inventors: Man Wong, Hoi Kwok, Dongli Zhang
  • Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
    Publication number: 20060263957
    Abstract: Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.
    Type: Application
    Filed: April 27, 2006
    Publication date: November 23, 2006
    Applicant: The Hong Kong University of Science and Technology
    Inventors: Man Wong, Hoi-Sing Kwok, Zhiguo Meng, Dongli Zhang, Xuejie Shi