Abstract: An apparatus for processing a substrate includes a first processing unit configured to have a first processing container having a first inner space and a first support unit supporting and rotating the substrate in the first inner space; a second processing unit configured to have a second processing container having a second inner space and a second support unit supporting and rotating the substrate in the second inner space; an exhaust unit configured to exhaust the first and the second inner space; a first exhaust pipe configured to have a first exhaust port for introducing atmosphere of the first inner space and exhaust the atmosphere introduced through the first exhaust port to the integrated duct; and a second exhaust pipe configured to have a second exhaust port for introducing atmosphere of the second inner space and exhaust the atmosphere introduced through the second exhaust port to the integrated duct.

Abstract: A thickness measurement device includes: a terahertz wave emitter emitting terahertz waves toward an edge of the second layer; a terahertz wave detector detecting, with reference to a reflected location of the terahertz waves, a first terahertz wave (R1) reflected from a surface of the second layer, a second terahertz wave (R2) reflected from an exposed surface of the first layer, and a third terahertz wave (R3) reflected from an interface between the first layer and the second layer; and a calculator calculating an index of refraction of the second layer based on a detection time difference (?t1) between a detection time of the first terahertz wave (R1) and a detection time of the second terahertz wave (R2) and a detection time difference (?t2) between the detection time of the first terahertz wave (R1) and a detection time of the third terahertz wave (R3).

Abstract: A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.

Abstract: A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.

Abstract: A bispecific molecule according to an embodiment includes a B7-H3 antibody or an antigen-binding fragment thereof, and a transforming growth factor beta (TGF?) binding portion bound thereto. The bispecific molecule is bispecifically bound to B7-H3 and TGF? and thus can be utilized as an immune checkpoint inhibitor for various diseases including cancer.

Abstract: A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Abstract: Proposed is a substrate processing apparatus for cleaning the bottom surface of a substrate. The apparatus includes a processing container configured to form a processing space for a substrate, a substrate support unit provided inside the processing space and configured to support the substrate, a first nozzle unit configured to have a first nozzle member provided on a side of the substrate support unit inside the processing space and supplying a processing fluid toward a center area of a bottom surface of the substrate, and a second nozzle member provided to be fixedly coupled to the substrate support unit and supplying a processing fluid toward an edge area of the bottom surface of the substrate, wherein the first nozzle member is provided to rotate between a center position and an end position of the bottom surface of the substrate.

Abstract: A B7-H3 antibody or antigen-binding fragment thereof includes a heavy chain variable region including heavy chain complementarity determining regions (HCDRs) and a light chain variable region including light chain complementarity determining regions (LCDRs). The B7-H3 antibody has a predetermined complementarity determining region, thereby specifically binding to a B7-H3 antigen, and being internalized into cells, and being usable as an immune checkpoint inhibitor for various diseases.

Abstract: An apparatus for treating a substrate, the apparatus comprising: a treating container having an inner space; a support unit supporting and rotating the substrate in the inner space; and an exhaust unit exhausting an air flow in the inner space, wherein the treating container includes an outer cup providing the inner space; and an inner cup disposed at the inner space and spaced apart from the outer cup, and wherein the outer cup has a protrusion at a side wall thereof.

Abstract: According to an embodiment of a specimen inspection apparatus, the specimen inspection apparatus may comprise: a radiation unit; a reflection unit; a focus adjusting unit; a reception unit; and a control unit. The specimen inspection apparatus may comprise: a radiation unit for emitting a terahertz wave; a reflection unit for changing the path of a terahertz wave emitted from the radiation unit; a focus adjusting unit for forming an irradiation region on a specimen according to the path of the terahertz wave; a reception unit for receiving individual terahertz waves obtained by reflection, by the specimen, of the terahertz wave irradiated onto the first region; and a control unit for controlling the distance between at least two elements among the plurality of elements, and detecting whether the specimen is defective, according to the reflectivity difference between the terahertz waves.

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

Abstract: According to one embodiment of the present invention, A sample inspection device may provided, a total inspection module scanning a first area comprising a plurality of samples; a precision inspection module performing inspection on a sample determined as a suspected defective sample by the total inspection module in the first area; and a controller processing each data obtained from the total inspection module and the precision inspection module, and detecting a defective sample in the first area, wherein the precision inspection module may include an emitter emitting terahertz wave to the first area, a guide wire guiding an irradiation direction of the terahertz wave, and a vibration unit vibrating the guide wire.

Abstract: A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Abstract: According to an aspect of the invention, a thickness measuring device comprising: an emission unit emitting an electromagnetic wave toward a specimen, a reception unit receiving an electromagnetic wave output from a direction in which the specimen is positioned; and a control unit calculating a thickness of the specimen by receiving a signal from the reception unit, wherein when the specimen has a first thickness, the reception unit receives a first electromagnetic wave, and when the specimen has a second thickness, the reception unit receives a second electromagnetic wave, wherein the first electromagnetic wave has a first peak value at a first time point, and the second electromagnetic wave has a second peak value at a second time point, and wherein when the first thickness is greater than the second thickness, the first peak value is smaller than the second peak value, may be provided.

Abstract: The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.

Abstract: An apparatus for processing a substrate includes a first processing unit configured to have a first processing container having a first inner space and a first support unit supporting and rotating the substrate in the first inner space; a second processing unit configured to have a second processing container having a second inner space and a second support unit supporting and rotating the substrate in the second inner space; an exhaust unit configured to exhaust the first and the second inner space; a first exhaust pipe configured to have a first exhaust port for introducing atmosphere of the first inner space and exhaust the atmosphere introduced through the first exhaust port to the integrated duct; and a second exhaust pipe configured to have a second exhaust port for introducing atmosphere of the second inner space and exhaust the atmosphere introduced through the second exhaust port to the integrated duct.

Abstract: An apparatus for treating a substrate, the apparatus comprising: a treating container having an inner space; a support unit supporting and rotating the substrate in the inner space; and an exhaust unit exhausting an air flow in the inner space, wherein the treating container includes an outer cup providing the inner space; and an inner cup disposed at the inner space and spaced apart from the outer cup, and wherein the outer cup has a protrusion at a side wall thereof.

Abstract: A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced.

Abstract: According to an embodiment of a specimen inspection apparatus, the specimen inspection apparatus may comprise: a radiation unit; a reflection unit; a focus adjusting unit; a reception unit; and a control unit. The specimen inspection apparatus may comprise: a radiation unit for emitting a terahertz wave; a reflection unit for changing the path of a terahertz wave emitted from the radiation unit; a focus adjusting unit for forming an irradiation region on a specimen according to the path of the terahertz wave; a reception unit for receiving individual terahertz waves obtained by reflection, by the specimen, of the terahertz wave irradiated onto the first region; and a control unit for controlling the distance between at least two elements among the plurality of elements, and detecting whether the specimen is defective, according to the reflectivity difference between the terahertz waves.

Abstract: A thickness measuring device is provided. The thickness measuring device may include a terahertz wave signal processing unit configured to receive a terahertz wave according to at least one mode of a reflection mode and a transmission mode, a refractive index information acquisition unit configured to acquire refractive index information of the thickness measurement sample in consideration of second-time difference information between a first reflected terahertz wave and a second reflected terahertz wave, and a thickness information acquisition unit configured to acquire thickness information of the thickness measurement sample in consideration of the refractive index information.