Abstract: A semiconductor memory device includes a substrate that includes an active area defined by an element isolation film, a gate electrode within the substrate and that extends in a first direction, a buffer film on the substrate and that extends in a second direction that intersects the first direction, a direct contact that extends through the buffer film and contacts a portion of the active area, a conductive pattern on the direct contact and the buffer film and that extends in the second direction, and a capacitor structure on the substrate and that contacts another portion of the active area. The buffer film includes a lower buffer film and an upper buffer film on the lower buffer film, the upper buffer film includes a first upper insulating film, a third upper insulating film, and a second upper insulating film, and the third upper insulating film contains carbon (C).

Abstract: Provided is a multi-well-based rapid cell culture test device designed such that fluid films with a uniform thickness are formed. The rapid cell culture test device has an array structure of a plurality of aligned well units, each of which includes a first sub-well in which a first fluid is accommodated and a barrier structure surrounding the first sub-well to define the area of the first sub-well. A capillary channel recessed from the bottom surface of the first sub-well while traversing the bottom surface is formed to accommodate the first fluid and the barrier structure is divided into a barrier portion A located adjacent to one end of the capillary channel and a barrier portion B located adjacent to the other end of the capillary channel.

Abstract: The present invention relates to activated lymphocytes comprising cytokine-induced killer cells in which CD8+CD56+NKG2D+ cells are present at a proportion of 20% or more, and a preparation method therefor, and more particularly, to activated lymphocytes comprising cytokine-induced killing cells which have high tumor cell killing abilities and growth rates and are almost free of side effects because they do not require the combined administration of interleukin-2, and a preparation method therefor.

Abstract: Disclosed is a speech synthesis method including acquiring second speech data and a target text, acquiring first information includes embedding information corresponding to the second speech data, acquiring second information including embedding information of the second speech data, the embedding information in relation with components generated based on a sequence of the target text, and acquiring audio data corresponding to the target text and reflecting characteristics of speech of a speaker based on the first information and the second information.

Abstract: A polyimide film, a method of manufacturing the same, and a flexible metal foil clad laminate including the same. The polyimide film includes: a first imide bond unit having a glass transition temperature of 400° C. or higher; and a second imide bond unit having a glass transition temperature of less than 400° C., wherein the first imide bond unit is present in an amount of about 39 mol % to about 90 mol % in the polyimide film.

Abstract: A road extraction device and method comprising: a data collection module configured to collect a road image associated with a road; and a deep learning module configured to perform a task for extracting the road from the road image by using deep learning technology, wherein the deep learning module comprises: a first deep learning unit configured to perform segmentation on the road image; and a second deep learning unit configured to perform object detection on the road image.

Abstract: A difference detection device comprising: a data collection module configured to collect a satellite image set comprising a plurality of satellite images; a pre-processing module configured to generate a pre-processing image set by matching characteristic information of the satellite images included in the satellite image set; and a difference determination module configured to generate difference information between the plurality of satellite images by determining a difference between pre-processing images included in the pre-processing image set, wherein the characteristic information comprises at least one of illumination information and color information of the satellite image.

Abstract: The present invention provides a multilayer polyimide film and a manufacturing method therefor, wherein the multilayer polyimide film comprises a first skin layer and a second skin layer respectively formed on one outer surface of a core layer and an opposite surface of the outer surface, has a thermal expansion coefficient that is between 2.0 ppm/° C. and 6.0 ppm/° C., and has a hygroscopic expansion coefficient that is between 3.0 ppm/RH % and 6.0 ppm/RH %.

Abstract: Disclosed are three-dimensional semiconductor memory devices and electronic systems. The three-dimensional semiconductor memory device comprises stack structures that include interlayer dielectric layers and gate electrodes that are alternately stacked on a substrate, vertical channel structures that penetrate the stack structures, and a separation structure that runs in a first direction across between the stack structures. The separation structure includes a first portion that extends in a vertical direction from the substrate, and a second portion on the first portion and including a material different from a material of the first portion. A top surface of the second portion is at a level the same as that of top surfaces of the vertical channel structures.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: The present invention provides a polyimide film comprising inorganic fillers, the inorganic fillers comprising: a first filler group having a particle diameter (D50) falling within the range of 2-2.7 ?m; and a second filler group having an average particle diameter (D50) falling within the range of 1-1.7 ?m, wherein each of the first and second filler groups satisfies relational expression 1, 0.7?(D90?D10)/(D50)?1.2, with respect to the particle diameter.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: The present disclosure relates to a vehicle airbag device, which includes a main cushion and an auxiliary cushion deploying from the main cushion and may more effectively protect both a passenger-seat passenger in a normal seating state and a passenger-seat passenger in a relaxed seating state even in the event of an oblique offset collision by differentiating the deployment of the auxiliary cushion by releasing or maintaining the connection of a tether connected to the auxiliary cushion during deployment of an airbag cushion.

Abstract: Discussed is a luminous body including a plurality of emission moieties, each emission moiety including an inorganic emission particle and a coating layer surrounding a surface of the inorganic emission particle, and an encapsulation moiety connected to or combined with the coating layer of the plurality of emission moieties by a covalent bond and surrounding the plurality of emission moieties.

Abstract: The present disclosure relates to a vehicle airbag device, which includes a main cushion and an auxiliary cushion deploying from the main cushion and may more effectively protect both a passenger-seat passenger in a normal seating state and a passenger-seat passenger in a relaxed seating state even in the event of an oblique offset collision by differentiating the deployment of the auxiliary cushion by releasing or maintaining the connection of a tether connected to the auxiliary cushion during deployment of an airbag cushion.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: The present invention provides a polyimide film comprising an inorganic filler, which comprises a first filler group having a diameter (D50) of 2-2.7 ?m and a second filler group having an average diameter (D50) of 1-1.7 ?m, wherein the polyimide film satisfies relation 1: 0.7?(D90?D10)/(D50)?1.2, which is about the respective diameters of the first filler group and the second filler group.

Abstract: An electronic device includes a processor configured to perform operations including inputting an image into an encoder to generate a feature map including information about an illumination present in the input image, iteratively updating a plurality of slot vectors using the calculated feature map to calculate a plurality of predicted illumination vectors, calculating, using the calculated plurality of predicted illumination vectors, a plurality of mixture maps representing respective effects of a plurality of virtual illuminations on pixels in the input image and a plurality of illumination color vectors representing respective color values of the plurality of virtual illuminations, and generating an illumination map using the calculated plurality of mixture maps and the calculated plurality of illumination color vectors.