Abstract: Disclosed herein are systems and methods for serial flow emulsion processes. Systems and methods as described herein result in reduced cross-contamination.

Abstract: The present embodiments are directed, in part, to compounds, or pharmaceutically acceptable salts thereof, or pharmaceutical compositions thereof for modulating the activity of delta opioid receptor, biased and/or unbiased, and/or methods for treating pain, migraines, headaches, depression, Parkinsons Disease, anxiety, and/or overactive bladder, and other disorders and conditions described herein or any combination thereof.

Abstract: An exemplary method of facilitating hand-offs between Femtocells includes receiving an indication of a cell identifying code detected by a mobile station currently communicating with a serving Femtocell. A determination is made whether the received cell identifying code corresponds to a known Femtocell. The known Femtocell becomes a target Femtocell if a successful hand-off was previously made from the serving Femtocell to the known Femtocell. A hand-off is instigated to the target Femtocell.

Abstract: A first bias charge is provided to first bias region at a first level of an electronic device, the first bias region directly underlying a first transistor having a channel region at a second level that is electrically isolated from the first bias region. A voltage threshold of the first transistor is based upon the first bias charge. A second bias charge is provided to second bias region at the first level of an electronic device, the second bias region directly underlying a second transistor having a channel region at a second level that is electrically isolated from the first bias region. A voltage threshold of the second transistor is based upon the second bias charge.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: A method for wireless communications with mobile stations located within a femtocell is described. The method includes registering a femtocell with an IMS core network to receive IMS services for one or more mobile stations located within the femtocell, and separately registering the mobile station with an application server to provide additional services to the mobile station located within the femtocell. The additional services may be CDMA services. Also, registering the femtocell with the IMS core network may include transmitting femtocell registration information that does not include information regarding the mobile station to the IMS core network to request IMS services for the mobile station.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract: The present invention generates model scenarios of semiconductor chip design and uses interpolation and Monte Carlo, with random number generation inputs, techniques to iteratively assess the models for a more comprehensive and accurate assessment of design space, and evaluation under projected manufacturing conditions. This evaluation information is then incorporated into design rules in order to improve yield.

Abstract: The techniques and technologies described herein relate to the automatic creation of photoresist masks for stress liners used with semiconductor based transistor devices. The stress liner masks are generated with automated design tools that leverage layout data corresponding to features, devices, and structures on the wafer. A resulting stress liner mask (and wafers fabricated using the stress liner mask) defines a stress liner coverage area that extends beyond the boundary of the transistor area and into a stress insensitive area of the wafer. The extended stress liner further enhances performance of the respective transistor by providing additional compressive/tensile stress.

Abstract: To address the need to have new techniques that are able to improve handoff decision-making, the network may employ a method such as that depicted in diagram 200 or 300. In one method, the network receives (201) a user handoff approval indication from a UE regarding handoff of the UE to a target cell and then determines (202) whether to allow the handoff based on this user handoff approval indication. In another method, the network compares (301) attributes of a target cell to stored user handoff policies associated with a UE to determine a user policy approval indication regarding handoff to the target cell and then determines (302) whether to allow the handoff based on this policy approval indication. These methods afford users greater control in managing handoffs in the more varied and less uniform networking landscapes that technologies such as femto cell technology are creating.

Abstract: The present invention provides a method for determining the HLR for a user who has been ported in to an IMS network. A call request is received for a mobile unit that has been ported. The communication system determines a Home Location Register (HLR) for the mobile unit. The communication system receives a temporary directory number associated with the mobile unit. The call request is completed to the mobile unit using the temporary directory number.

Abstract: A system for providing wireless services to a first user on the system includes a first application server coupled to a home location register and configured to provide wireless services to the first user. The home location register is configured to store information regarding the first user. A second application server is configured to provide wireline services to the first user and coupled to a media resource function. The media resource function is configured to produce tones and announcements. The second application server is further configured to interact with the first application server to provide an interface to the media resource function.

Abstract: An exemplary method of facilitating hand-offs between Femtocells includes receiving an indication of a cell identifying code detected by a mobile station currently communicating with a serving Femtocell. A determination is made whether the received cell identifying code corresponds to a known Femtocell. The known Femtocell becomes a target Femtocell if a successful hand-off was previously made from the serving Femtocell to the known Femtocell. A hand-off is instigated to the target Femtocell.

Abstract: A stress-enhanced semiconductor device is provided which includes a substrate having an inactive region and an active region, a first-type stress layer overlying at least a portion of the active region, and a second-type stress layer. The active region includes a first lateral edge which defines a first width of the active region, and a second lateral edge which defines a second width of the active region. The second-type stress layer is disposed adjacent the second lateral edge of the active region.

Abstract: The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.

Abstract: The present invention generates model scenarios of semiconductor chip design and uses interpolation and Monte Carlo, with random number generation inputs, techniques to iteratively assess the models for a more comprehensive and accurate assessment of design space, and evaluation under projected manufacturing conditions. This evaluation information is then incorporated into design rules in order to improve yield.

Abstract: A method for wireless communications with mobile stations located within a femtocell is described. The method includes registering a femtocell with an IMS core network to receive IMS services for one or more mobile stations located within the femtocell, and separately registering the mobile station with an application server to provide additional services to the mobile station located within the femtocell. The additional services may be CDMA services. Also, registering the femtocell with the IMS core network may include transmitting femtocell registration information that does not include information regarding the mobile station to the IMS core network to request IMS services for the mobile station.

Abstract: A first bias charge is provided to first bias region at a first level of an electronic device, the first bias region directly underlying a first transistor having a channel region at a second level that is electrically isolated from the first bias region. A voltage threshold of the first transistor is based upon the first bias charge. A second bias charge is provided to second bias region at the first level of an electronic device, the second bias region directly underlying a second transistor having a channel region at a second level that is electrically isolated from the first bias region. A voltage threshold of the second transistor is based upon the second bias charge.

Abstract: The techniques and technologies described herein relate to the automatic creation of photoresist masks for stress liners used with semiconductor based transistor devices. The stress liner masks are generated with automated design tools that leverage layout data corresponding to features, devices, and structures on the wafer. A resulting stress liner mask (and wafers fabricated using the stress liner mask) defines a stress liner coverage area that extends beyond the boundary of the transistor area and into a stress insensitive area of the wafer. The extended stress liner further enhances performance of the respective transistor by providing additional compressive/tensile stress.