Abstract: CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.

Abstract: CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.

Abstract: CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.

Abstract: A system for manufacturing a print board assembly, which is implemented in a system having a computer for storing parts insertion instruction diagrams and displaying parts insertion instructions, and a soldering unit for soldering a printed circuit board, includes: assembling different types of the printed circuit boards from pieces of parts and inspecting them in a multitude of cells; installing different types of the printed circuit boards in carriers to assemble them separately according to the parts insertion instructions displayed by the computer of each cell, and moving them to the soldering unit through a transfer conveyor line; and returning the carriers having the printed circuit boards completely soldered to each cell identified for the carriers through a return conveyor line.

Abstract: A method of manufacturing a print board assembly, which is implemented in a system having a computer for storing parts insertion instruction diagrams and displaying parts insertion instructions, and a soldering unit for soldering a printed circuit board, includes the steps of: assembling different types of the printed circuit boards from pieces of parts and inspecting them in a multitude of cells; installing different types of the printed circuit boards in carriers to assemble them separately according to the parts insertion instructions displayed by the computer of each cell, and moving them to the soldering unit through a transfer conveyor line; and returning the carriers having the printed circuit boards completely soldered to each cell identified for the carriers through a return conveyor line.