CHEMICAL VAPOR DEPOSITION METALLIZATION PROCESSES AND CHEMICAL VAPOR DEPOSITION APPARATUS USED THEREIN
CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.
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This application is a Divisional of U.S. patent application Ser. No. 10/855,114, filed on May 26, 2004, which claims the benefit of Korean Patent Application No. 2003-34946, filed on May 30, 2003, the contents of which are incorporated herein by reference in their entirety.
BACKGROUND OF THE INVENTION1. Field of the Invention
The present invention relates to fabrication processes of semiconductor devices and fabrication equipment used therein and, more particularly, to metallization processes and chemical vapor deposition apparatus used therein, and more particularly, to in situ metallization processes and chemical vapor deposition apparatus used therein.
2. Description of the Related Art
Metal lines are necessarily used in fabrication of semiconductor devices. The formation of the metal lines includes forming a metal layer on a semiconductor substrate and patterning the metal layer using photolithography/etch processes. During the photolithography process, an irregular reflection may occur on the surface of the metal layer. The irregular reflection is due to the surface roughness of the metal layer. Accordingly, an anti-reflective coating layer is widely used in order to suppress the irregular reflection.
A method of forming the metal layer and the anti-reflective coating layer is taught in U.S. Pat. No. 6,187,667 B1 to Shan et al., entitled “Method of Forming Metal Layer and/or Antireflective Coating Layer On An Integrated Circuit.” According to Shan et al., the metal layer is cooled prior to formation of the anti-reflective coating layer on the metal layer. Thus, it can prevent protrusions such as bumps from being produced on the surface of the metal layer during the formation of the anti-reflective coating layer.
In the event that the metal layer directly contacts an impurity region formed at a predetermined area of a semiconductor substrate through a contact hole that penetrates an interlayer insulating layer, metal atoms in the metal layer may be diffused into the impurity region. In this case, junction leakage current of the impurity region can be increased to cause a malfunction of a semiconductor device.
Accordingly, most of highly-integrated semiconductor devices widely employ a barrier metal layer interposed between the metal layer and the impurity region. In general, the barrier metal layer is formed using a chemical vapor deposition (CVD) technique at a high temperature of about 700° C. in order to obtain good step coverage, and the metal layer is formed at a low temperature less than 500° C. Therefore, when the barrier metal layer and the metal layer are sequentially formed using an in-situ process in a single deposition apparatus, the electrical characteristics of the contact resistance between the metal layer and the impurity region may be degraded due to the high temperature of the barrier metal layer.
Further, a metallization process employing a copper layer is taught in U.S. Pat. No. 5,989,623 to Chen, et al., entitled “Dual Damascene Metallization.” According to Chen, et al., there is a deposition system for forming copper lines. However, the deposition system has a configuration that a CVD titanium nitride chamber and a CVD copper chamber are attached to a single transfer chamber. Thus, a source gas used in formation of a CVD titanium nitride layer can be introduced into the CVD copper chamber through the transfer chamber or vice versa. Therefore, the titanium nitride layer or the copper layer may contain impurities.
Furthermore, a technology of filling contact holes is taught in U.S. Pat. No. 6,238,533 to Satipunwaycha, et al., entitled “Integrated PVD System For Aluminum Hole Filling Using Ionized Metal Adhesion Layer.” According to Satipunwaycha, et al., there is provided a deposition system for forming aluminum lines. The deposition system includes two transfer chambers separated from each other and physical vapor deposition (PVD) chambers attached to the transfer chambers. However, the PVD technique exhibits remarkably poor step coverage as compared to a typical CVD technique. Therefore, according to Satipunwaycha, et al., there are some limitations in forming a uniform barrier metal layer and metal contact plugs in contact holes having a high aspect ratio.
SUMMARY OF THE INVENTIONIn one embodiment, a chemical vapor deposition (CVD) metallization process using a CVD apparatus includes forming a barrier metal layer on a semiconductor substrate, cooling the semiconductor substrate having the barrier metal layer without breaking vacuum, and forming an additional metal layer on the cooled barrier metal layer. As a result, the present invention allows the formation of the reliable contact structure without any degradation of the throughput.
BRIEF DESCRIPTION OF THE DRAWINGSThe exemplary embodiments of the present invention will become more apparent to those of ordinary skill in the art by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
FIGS. 3 to 6 are sectional views to illustrate methods of forming metal layers using the CVD apparatus shown in
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. In addition, when it is described that one layer is positioned ‘on’ another layer or substrate, the layer can be directly formed on another layer or substrate, or the third layer can be positioned between one layer and another layer or substrate. Like numbers refer to like elements throughout the specification.
Referring to
First and second load lock chambers L1 and L2 are attached to the first transfer chamber T1. The first load lock chamber L1 provides a space for temporarily storing a semiconductor substrate to be loaded into the first transfer chamber T1, and the second load lock chamber L2 provides a space for temporarily storing a semiconductor substrate to be unloaded from the first transfer chamber T1. Thus, the first load lock chamber L1 corresponds to an input load lock chamber, and the second load lock chamber L2 corresponds to an output load lock chamber.
A first group of CVD process chambers P11, P12 and P13, respectively, are attached to the first transfer chamber T1. The first robot R1 transfers a semiconductor substrate stored in the first load lock chamber L1 into any one of the first group of CVD process chambers P11, P12 and P13 and the cooling chambers C1 and C2. Alternatively, the first robot R1 may transfer a semiconductor substrate into any one of the first group of CVD process chambers P11, P12 and P13 and the cooling chambers C1 and C2 and into the second load lock chamber L2.
Any one of the first group of CVD process chambers P11, P12 and P13 may be a plasma CVD chamber. For instance, the first CVD process chamber P11 may be a plasma CVD chamber including a cathode plate 51 and an anode plate 53, which are installed inside the first CVD process chamber P11. The cathode plate 51 is used as a chuck on which a semiconductor substrate is placed, and the anode plate 53 is installed over the cathode plate 51. In this case, the first CVD process chamber P11 includes a plurality of source gas injection conduits 55 and 57. Source gases are injected into the first CVD process chamber P11 through the source gas injection conduits 55 and 57. Also, the first CVD process chamber P11 includes an exhaust line 59. The atmosphere inside the first CVD process chamber P11 is exhausted through the exhaust line 59. The first CVD process chamber P11, can be used to form an ohmic layer, such as a titanium layer.
In the meantime, another chamber of the first group of CVD process chambers P11, P12 and P13 may be a thermal CVD chamber. For example, the second CVD process chamber P12 may be a thermal CVD chamber having a chuck 61 and a heater block 63 installed therein. The heater block 63 is installed below the chuck 61 to heat up a semiconductor substrate placed on the chuck 61. In this case, the second CVD process chamber P12 may also include a plurality of source gas injection conduits 65 and 67 and an exhaust line 69 like the first CVD process chamber P11. The second CVD process chamber P12, can be used to form a barrier metal layer, such as a titanium nitride layer.
The third CVD process chamber P13 may also have the same configuration as the first CVD process chamber P11 or the second CVD process chamber P12 as described above.
A second group of CVD process chambers P21 and P22 are attached to the second transfer chamber T2. In this case, the second robot R2 transfers a semiconductor substrate in the first or second cooling chamber C1 or C2 into one chamber of the second group of CVD process chambers P21 and P22. On the contrary, the second robot R2 may transfer a semiconductor substrate in one chamber of the second group of CVD process chambers P21 and P22 into the first or second cooling chamber C1 or C2.
One of the second group of CVD process chambers P21 and P22 may be a thermal CVD chamber having the same configuration as the second CVD process chamber P12. The fourth CVD process chamber P21 can include a chuck 71 and a heater block 73 installed therein as well as a plurality of source gas injection conduits 75, 77 and 79 and an exhaust line 81. The fourth CVD process chamber, can be used to form a metal layer, such as a tungsten layer. The fifth CVD process chamber P22 may also have the same configuration as the aforementioned plasma CVD chamber or the thermal CVD chamber.
Referring to
Referring to
Referring to
Referring to
Subsequently, the semiconductor substrate having the ohmic layer 23 is transferred onto the chuck 61 located in the second CVD process chamber P12 using the first robot R1. A barrier metal layer 25 is formed on the semiconductor substrate using a thermal CVD process inside the second CVD process chamber P12 (step 3 of
Alternatively, both of the ohmic layer 23 and the barrier metal layer 25 can be formed using the plasma CVD process or the thermal CVD process.
The semiconductor substrate having the barrier metal layer 25 is transferred into the first cooling chamber C1 using the first robot R1. In the event that the first cooling chamber C1 has the configuration as shown in
Alternatively, when the second cooling chamber C1 has the configuration as shown in
As a result, the cooling time can be reduced without any contamination due to the particles in the atmosphere, since the barrier metal layer 25 is intentionally cooled down using a cooling gas or a cooling medium without breaking vacuum.
Referring to
As described above, the barrier metal layer 25 is formed inside the second CVD process chamber P12 attached to the first transfer chamber T1, and the metal layer 27 is formed inside the fourth CVD process chamber P21 attached to the second transfer chamber T2, which is separated from the first transfer chamber T1. Therefore, even though the source gases used in formation of the barrier metal layer 25 remain in the first transfer chamber T1, the source gases in the first transfer chamber T1 may not be introduced into the fourth CVD process chamber P21 while the semiconductor substrate having the barrier metal layer 25 is loaded into the fourth CVD process chamber P21 in order to form the metal layer 27. In other words, the tungsten layer do not contain the impurities such as titanium atoms, chlorine atoms and nitrogen atoms decomposed from the TiCl4 gas and the NH3 gas, which are used in formation of the titanium nitride layer 25.
The semiconductor substrate having the metal layer 27 is transferred into the second cooling chamber C2. The semiconductor substrate in the second cooling chamber C2 can be cooled down using the same manner as the cooling process performed inside the first cooling chamber Cl. The cooled semiconductor substrate in the second cooling chamber C2 is transferred into the second load lock chamber L2 using the first robot R1, and the semiconductor substrate in the second load lock chamber L2 is unloaded.
Alternatively, the semiconductor substrate in the second cooling chamber C2 can be transferred into the second load lock chamber L2 using the first robot R1 without the application of the cooling process. p Referring to
In
The contact structures showing the measurement results of
In Table 1, samples of group “A” were naturally cooled down in the atmosphere after formation of the thermal CVD TiN layer, and samples of group “B” were cooled down using a nitrogen gas inside an in-situ cooling chamber after formation of the thermal CVD TiN layer. That is, the samples of group “B” were fabricated using the CVD apparatus shown in
As can be seen from
As described above, according to an aspect of the present invention, the semiconductor substrate having the barrier metal layer is cooled using the in-situ cooling chamber, and the metal layer is formed on the cooled semiconductor substrate. Therefore, the effect that the temperature of the barrier metal layer which influences the contact resistance can be significantly reduced. As a result, the present invention allows the formation of the reliable contact structure without any degradation of the throughput.
Although the preferred embodiments of the present invention have been described in detail hereinabove, it should be understood that many variations and/or modifications of the basic inventive concepts apparent to those skilled in the art will still fall within the spirit and scope of the present invention as defined in the appended claims.
Claims
1. A chemical vapor deposition (CVD) apparatus comprising:
- first and second transfer chambers separated from each other;
- at least one cooling chamber installed between the first and second transfer chambers;
- a first CVD process chamber attached to the first transfer chamber; and
- a second CVD process chamber attached to the second transfer chamber.
2. The CVD apparatus according to claim 1, further comprising:
- first and second load lock chambers attached to the first transfer chamber.
3. The CVD apparatus according to claim 1, wherein the at least one cooling chamber includes a stage, and the stage includes a circulation conduit through which a cooling medium flows.
4. The CVD apparatus according to claim 1, wherein the at least one cooling chamber having a chuck installed therein, and at least one cooling gas injection line for supplying a cooling gas thereto.
5. The CVD apparatus according to claim 1, wherein the first CVD process chamber comprises a plasma CVD process chamber and/or a thermal CVD process chamber.
6. The CVD apparatus according to claim 1, wherein the second CVD process chamber comprises a thermal CVD process chamber.
7. The CVD apparatus according to claim 1, wherein a source gas injected into the first CVD process chamber is different from a source gas injected into the second CVD process chamber.
Type: Application
Filed: Jan 18, 2007
Publication Date: May 24, 2007
Applicant: SAMSUNG ELECTRONICS CO., LTD. (Gyeonggi-do)
Inventors: Doo-Won KANG (Gangwon-do), Kap-Soo LEE (Gyeonggi-do), Hyun-Jong LEE (Gyeonggi-do)
Application Number: 11/624,645
International Classification: H01L 21/4763 (20060101); H01L 21/44 (20060101);