Patents by Inventor Douglas A. Keszler

Douglas A. Keszler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11299399
    Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: April 12, 2022
    Assignees: University of Oregon, Oregon State University
    Inventors: Brantly Fulton, Milton N. Jackson, Jr., Darren W. Johnson, Shannon W. Boettcher, Cory K. Perkins, Douglas A. Keszler, James E. Hutchison
  • Publication number: 20220102639
    Abstract: Reagents and aqueous solutions thereof are described that are useful for aqueous processing to form thin films comprising metal oxides. A film, or layered film, may be incorporated into working devices where the thin film provides useful optical properties, electrical properties, or both.
    Type: Application
    Filed: December 9, 2021
    Publication date: March 31, 2022
    Applicant: Oregon State University
    Inventors: Cory K. Perkins, Douglas A. Keszler
  • Patent number: 11279129
    Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: March 22, 2022
    Assignees: Hewlett-Packard Development Company, L.P., Oregon State University
    Inventors: James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Douglas A Keszler, John Wager, Roberto A Pugliese, William F Stickle, Greg Scott Long
  • Publication number: 20210271170
    Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
    Type: Application
    Filed: March 1, 2021
    Publication date: September 2, 2021
    Inventors: Alan J. Telecky, Jason K. Stowers, Douglas A. Keszler, Stephen T. Meyers, Peter de Schepper, Sonia Castellanos Ortega, Michael Greer, Kirsten Louthan
  • Patent number: 11029448
    Abstract: Disclosed herein are embodiments of a porous aluminum oxide thin film having a surface RMS roughness value of less than 1 nm. The thin film may also comprise phosphorus. The disclosed thin films may have a refractive index of from 1 to 2, such as from 1 to 1.5. Also disclosed are embodiments of as method for making the disclosed thin films, comprising forming an aqueous solution of the alumina precursor, a surfactant and optionally a phosphorus-containing precursor, and depositing the solution on a substrate.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: June 8, 2021
    Assignee: Oregon State University
    Inventors: Cory K. Perkins, Ryan Helmut Mansergh, Juan Carlos Ramos, Douglas A. Keszler
  • Publication number: 20210048745
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Application
    Filed: October 30, 2020
    Publication date: February 18, 2021
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Publication number: 20200392012
    Abstract: Certain disclosed embodiments concern an organic solution suitable for forming metal oxide films, particularly thins films, comprising a metal salt selected from a Sn salt, an Sb salt, a dopant, and combinations thereof. The salt often is a halide salt, such as SnCl2 or SbCl3. Certain disclosed compositions are preferably formed using substantially pure reagents and may include a dopant, such as a fluoride dopant. Described solutions may be used to form thin films, such as a thin film comprising SnO2, Sb:SnO2, F:SnO2, or (Sb,F):SnO2. Such thin films may have any desired thickness, such as a thickness of from 200 or 700 nm, and are extremely smooth, such as having an RMS surface roughness >3 nm, such as 3 nm to 10 nm, with certain embodiments having an RMS surface roughness <2 nm or <1 nm. Devices can be assembled comprising the thin films on a suitable substrate.
    Type: Application
    Filed: June 17, 2020
    Publication date: December 17, 2020
    Applicant: Oregon State University
    Inventors: Cory K. Perkins, Douglas A. Keszler
  • Publication number: 20200392628
    Abstract: Aqueous solutions of halogenides (oxyhalides) of zirconium and hafnium (M) with values of ?=X/M near one, for X=Cl, Br and I form amorphous solids or glasses, designated as M,X, in contrast to important crystalline oxyhalide end members with ?=2 (designated as MOX). The present disclosure describes methods for producing amorphous thin films comprising halogenides upon evaporation, and provides some measured physical properties, with attention to compositions for ?<2. The value of a below which only glasses are formed is about one for oxychlorides and oxybromides of both Zr and Hf. The chemical formulas for all the halogenide thin films prepared as noted above can be written as a function of the single parameter ?, according to M(OH)4-?X?.(4?-1)H2O. This is valid for e.g., crystalline zirconium oxychloride octahydrate, and for the glassy solids found for ?<2 and down to the onset of hydrolysis, ??0.5.
    Type: Application
    Filed: June 17, 2020
    Publication date: December 17, 2020
    Applicant: Oregon State University
    Inventors: Jennie M. Amador, Douglas A. Keszler, James Sommers
  • Publication number: 20200371439
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Application
    Filed: August 6, 2020
    Publication date: November 26, 2020
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Patent number: 10782610
    Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: September 22, 2020
    Assignee: Inpria Corporation
    Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
  • Publication number: 20200292937
    Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.
    Type: Application
    Filed: May 28, 2020
    Publication date: September 17, 2020
    Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
  • Patent number: 10775696
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: September 15, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Publication number: 20200270742
    Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.
    Type: Application
    Filed: June 24, 2016
    Publication date: August 27, 2020
    Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., The State of Oregon State Board of Higher Education on behalf of Oregon State University
    Inventors: James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Douglas A Keszler, John Wager, Roberto A Pugliese, William F Stickle, Greg Scott Long
  • Publication number: 20200257196
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Application
    Filed: April 29, 2020
    Publication date: August 13, 2020
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Patent number: 10732505
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: August 4, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Publication number: 20200207634
    Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.
    Type: Application
    Filed: December 17, 2019
    Publication date: July 2, 2020
    Applicants: University of Oregon, Oregon State University
    Inventors: Brantly Fulton, Milton N. Jackson, JR., Darren W. Johnson, Shannon W. Boettcher, Cory K. Perkins, Douglas A. Keszler, James E. Hutchison
  • Patent number: 10642153
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: May 5, 2020
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Publication number: 20200064733
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Application
    Filed: November 5, 2019
    Publication date: February 27, 2020
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Patent number: 10513442
    Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: December 24, 2019
    Assignees: University of Oregon, Oregon State University
    Inventors: Brantly Fulton, Milton N. Jackson, Jr., Darren W. Johnson, Shannon W. Boettcher, Cory K. Perkins, Douglas A. Keszler, James E. Hutchison
  • Publication number: 20190369489
    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
    Type: Application
    Filed: August 9, 2019
    Publication date: December 5, 2019
    Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville