Patent number: 10449763
Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.
Type:
Grant
Filed:
June 24, 2016
Date of Patent:
October 22, 2019
Assignees:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Oregon State University
Inventors:
James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Roberto A Pugliese, Greg Scott Long, Douglas A Keszler, John Wager
Publication number: 20190119101
Abstract: An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.
Type:
Application
Filed:
June 24, 2016
Publication date:
April 25, 2019
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., The State of Oregon State Board of Higher Education on behalf of Oregon State University
Inventors:
James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Roberto A Pugliese, Greg Scott Long, John Wager, Douglas A Keszler, T. Stafford Johnson, William F Stickel
Publication number: 20190100007
Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.
Type:
Application
Filed:
June 24, 2016
Publication date:
April 4, 2019
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., The State of Oregon State Board of Higher Education on behalf of Oregon State University
Inventors:
James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Roberto A Pugliese, Greg Scott Long, Douglas A Keszler, John Wager