Abstract: A Mach-Zehnder electro-optic modulator is formed that exhibits significantly reduced chirp by utilizing an RF electrode that covers a first waveguide arm in a first region of the modulator and covers the second, remaining waveguide arm in a third region of the modulator (with a second, intermediate region used as a transition area for the electrode). Moving the electrode from one waveguide to the other allows for the chirp created in the third region to essentially “null out” the chirp that accumulated along the first region. Modulation of the optical signal is maintained in the presence of the “electrode switching” by inverting the domain of the optical substrate material in the third region of the modulator.

Abstract: A Mach-Zehnder electro-optic modulator is formed that exhibits significantly reduced chirp by utilizing an RF electrode that covers a first waveguide arm in a first region of the modulator and covers the second, remaining waveguide arm in a third region of the modulator (with a second, intermediate region used as a transition area for the electrode). Moving the electrode from one waveguide to the other allows for the chirp created in the third region to essentially “null out” the chirp that accumulated along the first region. Modulation of the optical signal is maintained in the presence of the “electrode switching” by inverting the domain of the optical substrate material in the third region of the modulator.

Abstract: A method of forming thin film waveguide regions in lithium niobate uses an ion implant process to create an etch stop at a predetermined distance below the lithium niobate surface. Subsequent to the ion implantation, a heat treatment process is used to modify the etch rate of the implanted layer to be in the range of about 20 times slower than the bulk lithium niobate material. A conventional etch process (such as a wet chemical etch) can then be used to remove the virgin substrate material and will naturally stop when the implanted material is reached. By driving the ions only a shallow distance into the substrate, a backside etch can be used to remove most of the lithium niobate material and thus form an extremely thin film waveguide that is defined by the depth of the ion implant. Other structural features (e.g., ridge waveguides) may also be formed using this method.

Abstract: The specification describes a Mach-Zehnder electro-optic modulator device in which the ridge containing the waveguides in the interactive electro-optic regions have re-entrant sidewalls. This shifts the peak in the RF field profile to below the surface of the ridge and closer to the peak of the optical field, thereby producing a device with reduced drive voltage.

Abstract: Electro-optic modulator comprises a substrate having an epitaxial, preferentially oriented, low scattering loss thin ferroelectric film waveguide deposited by metalorganic chemcial vapor deposition on the substrate, and first and second strip electrodes on the waveguide with the electrodes spaced apart to establish an electric field effective to render the waveguide modulating to light in response to applied bias or voltage.

Abstract: High speed electro-optic modulator designs are presented. One design includes first and second electrodes offset from each other and further includes a substrate supporting a laterally confined ferroelectric material, for example, LiNbO.sub.3. The confined ferroelectric material, in turn, supports first and second optical waveguides. In a second design, a thin ferroelectric film is fabricated on a substrate that supports first and second electrodes. The thin ferroelectric film has a first thickness in which the first and second optical waveguides are supported, and a second thickness under a portion of the electrodes. The second thickness, for example, may be zero. A third design includes a thin ferroelectirc film fabricated on a substrate and supporting first and second electrodes. The thin ferroelectric film has a reduced thickness in at least one electrode gap region.

Abstract: Er and Ti are co-diffused under controlled conditions into a single crystal of LiNbO.sub.3. The co-diffusion is used to produce a light amplifier in LiNbO.sub.3 that is suitable for use in integrated optic devices.