Abstract: A dual-use thermal and electro-optic modulator. A thermal adjustment hardware set and an electric-field adjustment hardware set adjust the thermal and electrostatic properties of a common waveguide area. The hardware sets are electrically coupled. Signals for each type of modulation are conducted to the waveguide through a shared portion of a communication medium.

Abstract: A method of determining a parameter of a wafer is disclosed. Light is propagated through a waveguide disposed in the wafer. A first measurement of optical power is obtained at a first optical tap coupled to the waveguide and a second measurement of optical power is obtained at a second optical tap coupled to the waveguide using a photodetector placed at a selected location with respect to the wafer. A difference in optical power is determined between the first optical tap and the second optical tap from the first measurement and the second measurement. The parameter of the wafer is determined from the determined difference in optical power.

Abstract: A method and apparatus for controlling operation of an electro-optic modulator is disclosed. A first intensity of light is obtained at an input to the electro-optic modulator. A second intensity of light is obtained at an output of the electro-optic modulator. A difference between the obtained first intensity and the obtained second intensity is used to control a biasing of a modulator transfer function of the electro-optic modulator to control the electro-optic modulator.

Abstract: A method and apparatus for controlling operation of an electro-optic modulator is disclosed. A first intensity of light is obtained at an input to the electro-optic modulator. A second intensity of light is obtained at an output of the electro-optic modulator. A difference between the obtained first intensity and the obtained second intensity is used to control a biasing of a modulator transfer function of the electro-optic modulator to control the electro-optic modulator.

Abstract: A method for controlling an electro-optic modulator device includes measuring a performance metric of the device to define a first measured performance value, and changing a state of a first tuning portion of the device to connect the first tuning portion to ground.

Abstract: There is provided a method and apparatus for optically filtering a communication signal. More specifically, in one embodiment, there is provided an apparatus comprising an optical filter having first and second input ports and first and second output ports, the optical filter being configured to transmit light in a target frequency range to the first output port in response to receiving light at the first input port and being configured to transmit light in the target frequency range to the second input port in response to receiving light at the second output port, and first and second photodiodes, the first diode being located to be illuminated by light from the first output port and the second photodiode being located to be illuminated by light from the second input port.

Abstract: An optical demultiplexing device includes a first portion operative to receive an input optical signal having a first polarization, a second polarization and multiple channels, and split the input optical signal into a first optical signal having the first polarization and a second optical signal having the first polarization, and an optical demultiplexing portion communicatively connected to the polarization splitter portion, the optical demultiplexing portion operative to receive a combination of the first optical signal and the second optical signal, and output each channel of the first optical signal and the second optical signal to a photodetector device corresponding to each channel.

Abstract: A method of determining a parameter of a wafer is disclosed. Light is propagated through a waveguide disposed in the wafer. A first measurement of optical power is obtained at a first optical tap coupled to the waveguide and a second measurement of optical power is obtained at a second optical tap coupled to the waveguide using a photodetector placed at a selected location with respect to the wafer. A difference in optical power is determined between the first optical tap and the second optical tap from the first measurement and the second measurement. The parameter of the wafer is determined from the determined difference in optical power.

Abstract: A method for controlling an output of an electro-optical de-multiplexing device, the method including identifying which photodetector of a first array of photodetectors is converting a first channel of an optical signal into a first electrical channel signal, and affecting a communicative connection between the identified photodetector of the first array of photodetectors that is converting the first channel of the optical signal into the first electrical channel signal and a first output node associated with the first electrical channel signal.

Abstract: An electro-optical modulator device includes an optical signal path partially defined by a waveguide portion, a radio frequency (RF) signal path partially defined by a conductive line portion, an interaction region where an RF signal propagating in the RF signal path interacts with an optical signal propagating in the optical signal path to modulate the optical signal, and a first tuning portion arranged proximate to the conductive line portion, the first tuning portion including a conductive portion and a switch portion operative to connect the conductive portion to ground.

Abstract: A method for demultiplexing an optical signal includes receiving a multi polarization optical signal, separating the multi polarization optical signal into a first polarization optical signal and a second polarization optical signal, rotating a polarization of the first polarization optical signal to match a polarization of the second polarization optical signal, routing the first polarization optical signal and the second polarization optical signal to a common demultiplexing device, outputting a channel of the first polarization optical signal and the second polarization optical signal to a common photodetector.

Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

Abstract: An electro-optical device includes an optical de-multiplexing portion operative to output a first optical signal having a first wavelength and a second optical signal having a second wavelength, an array of photodetectors, and a switching logic portion communicatively connected to the array of photodetectors, the switching logic portion operative to determine which photodetector of the array of photodetectors is converting the first optical signal into a first electrical signal and output the first electrical signal from a first output node associated with the first optical signal.

Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

Abstract: A method of determining a parameter of a wafer is disclosed. Light is propagated through a waveguide disposed in the wafer. A first measurement of optical power is obtained at a first optical tap coupled to the waveguide and a second measurement of optical power is obtained at a second optical tap coupled to the waveguide using a photodetector placed at a selected location with respect to the wafer. A difference in optical power is determined between the first optical tap and the second optical tap from the first measurement and the second measurement. The parameter of the wafer is determined from the determined difference in optical power.

Abstract: A method of determining a parameter of a wafer is disclosed. Light is propagated through a waveguide disposed in the wafer. A first measurement of optical power is obtained at a first optical tap coupled to the waveguide and a second measurement of optical power is obtained at a second optical tap coupled to the waveguide using a photodetector placed at a selected location with respect to the wafer. A difference in optical power is determined between the first optical tap and the second optical tap from the first measurement and the second measurement. The parameter of the wafer is determined from the determined difference in optical power.

Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

Abstract: An optical waveguide system includes a substrate, a cladding layer arranged on the substrate, a core layer arranged on the cladding layer, and a lens-prism patterned in the core material, the lens-prism comprising a Fresnel lens portion, and a Fresnel prism portion.

Abstract: An optical waveguide system includes a substrate, a cladding layer arranged on the substrate, a core layer arranged on the cladding layer, a lens patterned in the core material, and a prism patterned in the core material, the prism arranged adjacent to the lens.