Abstract: The present invention includes a polishing pad or belt secured to a mechanism that allows the pad or belt to move in a reciprocating manner, i.e. in both forward and reverse directions, at high speeds. The constant bidirectional movement of the polishing pad or belt as it polishes the wafer provides superior planarity and uniformity across the wafer surface. When a fresh portion of the pad is required, the pad is moved through a drive system containing rollers, such that the rollers only touch a back side of the pad, thereby minimizing sources of friction other than the wafer that is being polished from the polishing side of the pad, and maximizing the lifetime of the polishing pad.

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract: A polishing head for performing chemical-mechanical polishing on a linear polisher has a flexible diaphragm coupling between a wafer carrier and a support housing which houses the wafer carrier. The diaphragm allows the carrier to move-substantially in the vertical direction within the housing, but a center shaft assembly limits movement in the horizontal direction.

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract: A thermal cycling module for thermally processing a substrate has a thermally-conductive support structure with a planar first side and a second side with a plurality of recesses. A heater is disposed on the first side of the support structure and a fluid distributor positioned beneath the second side of the support structure to direct a coolant onto the support structure to decrease the temperature of the substrate. The fluid distributor may have a plurality of rotatable arms and a plurality of nozzles attached to each arm.

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece.

Abstract: The present invention includes a polishing pad or belt secured to a mechanism that allows the pad or belt to move in a reciprocating manner, i.e. in both forward and reverse directions, at high speeds. The constant bidirectional movement of the polishing pad or belt as it polishes the wafer provides superior planarity and uniformity across the wafer surface. When a fresh portion of the pad is required, the pad is moved through a drive system containing rollers, such that the rollers only touch a back side of the pad, thereby minimizing sources of friction other than the wafer that is being polished from the polishing side of the pad, and maximizing the lifetime of the polishing pad.

Abstract: A control system and method for variable ramp rate operation of a heater or integrated heating and cooling plate is provided. The control system obtains a calibration signal for a specific thermal cycling profile and for a specific heater, by exposing a calibration wafer having temperature sensors coupled thereto to a predetermined thermal cycling profile. During the calibration process, the temperature sensed by one or more sensors positioned on the heater, or on a thermally conductive plate coupled to the heater is recorded, as is the signal output to the heater. Preferably the position of the wafer relative to the heating mechanism, and the flow of cooling fluid to the heating mechanism are also recorded as part of the calibration signal. When the calibration signal is executed during production processing, the heating mechanism, fluid flow and/or lift pin position can be adjusted based on feedback from the temperature sensors positioned on the heater or on the conductive plate.

Abstract: A heater is provided for use in substrate processing. In a first aspect, the heater is formed from a heater plate including an upper surface having at least one recess formed therein, a heater element wire disposed within the at least one recess and an electrically insulating and thermally conductive material disposed within the at least one recess so as to electrically insulate the heater element wire from the heater plate. Preferably a plurality of recesses are formed within the upper surface, a heater element wire is disposed within each recess and an electrically insulating and thermally conductive material is disposed within each recess so as to electrically insulate the heater element wire within each recess from the heater plate. A plurality of heating zones thereby may be formed.

Abstract: A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.

Abstract: The present invention describes an apparatus and method for aligning a pad/belt on a roller for use in chemical mechanical polishing using linear planarization. The present invention comprises an alignment sensor that senses the alignment of the pad/belt. The present invention additionally comprises a tensioner that tensions the pad/belt on the roller. And, a controller that controls the alignment of the pad/belt on the roller by controlling the tensioner.

Abstract: A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.

Abstract: A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information from the sensors are processed in order to provide feedback for compensating the fluid dispensing when fluid platens are used and/or the downforce exerted by the wafer carrier.

Abstract: A platen ring for use with a platen on a linear polisher, in which the platen ring is used to reduce fluctuation of the belt/pad assembly as it encounters the platen. The platen ring is disposed around the platen so that a fluctuation of the belt/pad assembly is dampened before the belt/pad assembly engages the platen. Reduction of the belt/pad fluctuation ensures a reduction in the within-wafer non-uniformity and provides for a more uniform polishing rate across the surface of the wafer.