Patents by Inventor Dougyong Sung
Dougyong Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250046587Abstract: The present disclosure relates to plasma diagnostic devices. An example plasma diagnostic device includes a pinhole through which a first optical signal passes, an optical device in which the first optical signal is incident and the first optical signal is converted into a second optical signal, a filter configured to filter the second optical signal and to output a third optical signal of a specific wavelength band, and a sensor configured to monitor a distribution of the first optical signal, the second optical signal, and the third optical signal.Type: ApplicationFiled: April 15, 2024Publication date: February 6, 2025Inventors: Taehyun Kim, Chansoo Kang, Minju Kim, Daewon Kang, Dougyong Sung, Jungmo Yang, Sejin Oh
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Patent number: 12210045Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.Type: GrantFiled: February 3, 2022Date of Patent: January 28, 2025Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byeongsang Kim, Dougyong Sung, Sungjin Kim, Yunhwan Kim, Inseok Seo, Seungbo Shim, Naohiko Okunishi, Minyoung Hur
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Publication number: 20250014871Abstract: According to an aspect of the present inventive concepts, a semiconductor processing apparatus includes: a chamber; an electrostatic chuck in an internal space of the chamber; a plurality of grid electrodes installed on the electrostatic chuck so as to be separated from each other in a first direction, perpendicular to an upper surface of the electrostatic chuck, and respectively having a plurality of through-holes; a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck and reflecting ions passing through the plurality of through-holes in each of the plurality of grid electrodes; and a voltage supply unit outputting a bias voltage having a predetermined cycle to at least one of the plurality of grid electrodes, wherein each of the plurality of grid electrodes includes a base plate containing a conductive material, and a cover layer covering a surface of the base plate and containing a metal oxide.Type: ApplicationFiled: January 8, 2024Publication date: January 9, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Sungwon CHO, Kyunghyun KIM, Ingi KIM, Sangki NAM, Dougyong SUNG, Sejin OH, Sungho JANG
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Publication number: 20240392426Abstract: A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.Type: ApplicationFiled: February 1, 2024Publication date: November 28, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Younseon WANG, Jeonghoon NAM, Youngkwon KIM, Hyunseo CHOI, Keonwoo KIM, Dougyong SUNG, Junho IM
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Publication number: 20240274418Abstract: An apparatus for measuring real-time plasma density includes, at least one plasma density measurement sensor in a process chamber, the at least one plasma density measurement sensor being configured to sense a plasma current between a first electrode and a second electrode when plasma is generated, and to generate an optical signal in response to the plasma current, and an optical signal detector on a side surface of the process chamber, the optical signal detector being configured to detect the optical signal from the at least one plasma density measurement sensor.Type: ApplicationFiled: August 25, 2023Publication date: August 15, 2024Inventors: Sungho Jang, Protopopov Vladimir, Dohoon Kwon, Sangki Nam, Dougyong Sung, Sungwon Cho
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Publication number: 20240234093Abstract: A substrate processing apparatus includes a chamber including an upper chamber defining a first plasma region for generating first plasma and a lower chamber defining a second plasma region for generating second plasma; a substrate support below the first and second plasma regions in the lower chamber, and configured to support a substrate; distribution plates between the first and second plasma regions in the upper chamber, and configured to inject ions included in the first plasma onto the substrate; a first plasma generating device on a side of the upper chamber and configured to generate the first plasma from a first process gas; a second plasma generating device on a side of the lower chamber and configured to generate the second plasma from a second process gas; and a controller that alternately operates the first plasma generating device and the second plasma generating device.Type: ApplicationFiled: August 18, 2023Publication date: July 11, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sejin OH, Dougyong Sung
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Patent number: 12020903Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.Type: GrantFiled: November 21, 2022Date of Patent: June 25, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yonghee Kim, Byunghun Han, Hyeongmo Kang, Donghyeon Na, Dougyong Sung, Seungbo Shim, Minjae Lee, Myungsun Choi, Minyoung Hur
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Publication number: 20240159657Abstract: Provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.Type: ApplicationFiled: May 26, 2023Publication date: May 16, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sejin OH, Sunggil KANG, Sangki NAM, Jeongmin BANG, Dougyong SUNG, Yeongkwang LEE, Sungho JANG, Jonghun PI
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Patent number: 11948777Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.Type: GrantFiled: December 16, 2021Date of Patent: April 2, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yonghee Kim, Dougyong Sung, Taekjoon Rhee, Sungwook Hong, Hakyoung Kim, Sangmin Jeong
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Publication number: 20240071737Abstract: A plasma sensor module may include an upper substrate, a lower substrate, at least one probe and a printed circuit board (PCB). The upper substrate may be configured to be exposed to plasma. The lower substrate may contact a lower surface of the upper substrate. The lower substrate may have a thickness that is thicker than a thickness of the upper substrate. The probe may be in the lower substrate. The PCB may be in the lower substrate. The PCB may be configured to apply an alternating current to the probe to detect a density of the plasma. Thus, the structural strength of the plasma sensor module may have improved structural strength.Type: ApplicationFiled: March 23, 2023Publication date: February 29, 2024Inventors: Sungwon Cho, Dohoon Kwon, Kyunghyun Kim, Dougyong Sung, Jungmo Yang, Younseon Wang, Younsok Choi
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Publication number: 20230402258Abstract: A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.Type: ApplicationFiled: April 19, 2023Publication date: December 14, 2023Inventors: Yunhwan KIM, Dougyong SUNG, Namkyun KIM, Minsung KIM, Youngjin NOH
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Publication number: 20230317418Abstract: A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.Type: ApplicationFiled: December 20, 2022Publication date: October 5, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jungmin KO, Sangki NAM, Dougyong SUNG, Byeongsang KIM, Yunhwan KIM, Suyoung YOO, Namkyun KIM, Kuihyun YOON
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Publication number: 20230187178Abstract: A substrate processing apparatus includes: a process chamber; a substrate support structure disposed at a lower portion of the process chamber and configured to accommodate a substrate; and a gas supply module disposed at an upper portion of the process chamber and supplying a process gas to the substrate, wherein the gas supply module includes a showerhead that includes: a first showerhead body including a plurality of injection ports configured to transfer gas transferred from a gas inlet into the process chamber; and a coating layer covering the first showerhead body and including aluminum fluoride, wherein the first showerhead body includes a metal matrix composite (MMC).Type: ApplicationFiled: November 23, 2022Publication date: June 15, 2023Inventors: Youngil KANG, Byeongsang KIM, Jongmu KIM, Yongbeom PARK, Dougyong SUNG, Yunjae LEE, Seugkyu LIM, Kyuhee HAN
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Patent number: 11658039Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.Type: GrantFiled: July 8, 2021Date of Patent: May 23, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyuho Kim, Nam Kyun Kim, Sungjun Ann, Myungsun Choi, Dougyong Sung, Seungbo Shim
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Publication number: 20230145476Abstract: A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.Type: ApplicationFiled: June 6, 2022Publication date: May 11, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Seongha JEONG, Kyung-Sun KIM, Dongwan KIM, Donghyeon NA, Dougyong SUNG, Myeongsoo SHIN, Ungyo JUNG
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Publication number: 20230100582Abstract: A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.Type: ApplicationFiled: April 5, 2022Publication date: March 30, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Yunhwan KIM, Dougyong SUNG, Byeongsang KIM, Youngjin NOH, Namkyun KIM
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Publication number: 20230084124Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.Type: ApplicationFiled: November 21, 2022Publication date: March 16, 2023Inventors: Yonghee KIM, Byunghun HAN, Hyeongmo KANG, Donghyeon NA, Dougyong SUNG, Seungbo SHIM, Minjae LEE, Myungsun CHOI, Minyoung HUR
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Publication number: 20230078095Abstract: A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.Type: ApplicationFiled: March 15, 2022Publication date: March 16, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dougyong SUNG, Youngdo Kim, Byeongsang Kim, Yunhwan Kim, Jungmo Yang, Sejin Oh, Sungho Jang
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Patent number: 11605529Abstract: A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.Type: GrantFiled: March 29, 2021Date of Patent: March 14, 2023Inventors: Hakyoung Kim, Kyeongtea Bang, Dougyong Sung
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Publication number: 20230010881Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.Type: ApplicationFiled: February 3, 2022Publication date: January 12, 2023Inventors: Byeongsang KIM, Dougyong SUNG, Sungjin KIM, Yunhwan KIM, Inseok SEO, Seungbo SHIM, Naohiko OKUNISHI, Minyoung HUR