Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

Abstract: A plasma system includes an electrode and an RF power supply unit supplying an RF power to the electrode to generate a plasma on the electrode. The RF power is provided in a pulse having a valley-shaped portion during an on-pulsing interval of the pulse. The valley-shaped portion is defined by a valley angle and a valley width. By controlling the valley angle and the valley width, the plasma may control the etching of a substrate.

Abstract: A dielectric window, a plasma system including the same, a method of fabricating the same, and a method of manufacturing a semiconductor device are provided. The method of manufacturing the semiconductor device may include steps of providing a substrate in a plasma chamber, performing a plasma treatment on a surface of the substrate, and removing the substrate from the plasma chamber, wherein the plasma chamber comprises the dielectric window. The dielectric window may include a dielectric material disk with at least one void, a filler filled in the void to allow the dielectric material disk to have a flat surface, and a passivation layer provided on the filler and the dielectric material disk.

Abstract: A method of atomic layer etching and fabricating a semiconductor device using the same, the atomic layer etching including providing a layer including atomic layers each having first and second atoms, the second atoms being different from the first atoms; and sequentially removing each of the atomic layers, wherein removing each of the atomic layers includes: providing a first etching gas that reacts with the first atoms such that the first etching gas is adsorbed on the first atoms; purging the first etching gas not adsorbed on the first atoms; removing the first atoms on which the first etching gas is adsorbed; providing a second etching gas that reacts with the second atoms such that the second etching gas is adsorbed on the second atoms; purging the second etching gas not adsorbed on the second atoms; and removing the second atoms on which the second etching gas is adsorbed.

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

Abstract: A substrate processing apparatus includes an electrostatic chuck which is made up of a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a first heater section in the dielectric plate between the chuck electrode and the base. The first heater section includes first heaters that are separated from each other in a first direction, and respective first upper plate electrodes disposed between the first heaters and the base. The first upper plate electrodes are separated from each other in the first direction and respectively connected to the first heaters.

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

Abstract: A plasma system includes a source electrode, an RF source power generation unit, an RF source power output unit, and a source power output managing unit. The source power output managing unit determines an amplitude and a duty cycle of a pulse RF source power based on information on an amplitude of a continuous wave RF source power.

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

Abstract: An apparatus for monitoring vacuum ultraviolet, the apparatus including a light controller including a slit, the slit to transmit plasma emission light emitted from a process chamber in which a plasma process is performed on a substrate; a light selector adjacent to the light controller, the light selector selectively to transmit light, having a predetermined wavelength band, of the plasma emission light passing through the slit; a light collector to concentrate the light selectively transmitted by the light selector; and a detector to detect the light concentrated by the light collector, the light selectively transmitted by the light selector being vacuum ultraviolet.

Abstract: Provided is a substrate processing system including a plasma processing module and a protection layer coated on the plasma processing module. The protection layer may include a diamond film.

Abstract: A substrate processing system and a method of coating a ceramic layer therewith are provided. The system may include a chamber and a ceramic layer on an inner surface of the chamber. The ceramic layer may include yttrium oxyfluoride (YxOyFz), where x=1, y=1, 2, and z=1, 2.

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.