Abstract: A polishing pad includes a polishing layer having a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The solid light-transmitting window has an upper portion with a first lateral dimension and a lower portion with a second lateral dimension that is smaller than the first lateral dimension. A top surface of the solid light-transmitting window coplanar with the polishing surface and a bottom surface of the solid light-transmitting window coplanar with a lower surface of the adhesive layer.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: A carrier head for chemical mechanical polishing that has a base, a mounting assembly connected to the base having a surface for contacting a substrate, and a retaining ring secured to the base. The retaining ring can include perfluoroalkoxy, polyetherketoneketone, polybenzimidazole, a semi-crystalline thermoplastic polyester, or a long molecular chain molecule produced from poly-paraphenylene terephthalamide.

Abstract: In-situ monitoring during processing of a substrate includes processing a conductive film on a substrate in a semiconductor processing apparatus and generating a signal from an eddy current sensor during processing. The signal includes a first portion generated when the eddy current sensor is adjacent the substrate, a second portion generated when the eddy current sensor is adjacent a metal body and not adjacent the substrate, and a third portion generated when the eddy current sensor is adjacent neither the metal body nor the substrate. The second portion of the signal is compared to the third portion of the signal and a gain is determined based at least on a result of the comparing, and the first portion of the signal is multiplied by the gain to generate an adjusted signal.

Abstract: A chemical mechanical polishing pad is described. A chemical mechanical polishing pad has an outer layer that includes a polishing surface, a first thinned region defined by a recess on a bottom surface of the pad, a first thick region surrounding the first thinned region, a second thinned region surrounding the first thick region, and a second thick region surrounding the second thinned region. The first thick region is not vertically extendable. The second thinned region defines one or more flexure mechanisms configured to make the first thinned region and the first thick region movable relative to the second thick region in a direction parallel or substantially parallel to the polishing surface.

Abstract: Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints.

Abstract: Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints.

Abstract: A polishing system can have a polishing pad with a polishing surface and a bottom surface that includes a recess with a thickness less than the thickness of the polishing pad. An in-situ monitoring module can be positioned in a cavity formed in part by the recess. A vent path is provided with an opening to the cavity.

Abstract: A carrier head for chemical mechanical polishing that has a base having at least a portion formed of a polymer, a mounting assembly connected to the base having a surface for contacting a substrate, a retainer secured to the portion of the base to prevent the substrate from moving along the surface, and a dampening material secured between the retainer and the base.

Abstract: Methods and apparatus for feedback controlled polishing. A computer program product for generating feedback for chemical mechanical polishing. The product includes instructions operable to cause a processor to receive monitoring information during a current polishing cycle in which a first polishing process is performed on a substrate that includes a metal layer. The first polishing process clears the metal layer from the substrate during the current polishing cycle. The product includes instructions to calculate a representation of a clearing profile of the first polishing process. The calculation is based on the monitoring information received during the current polishing cycle. The product includes instructions to detect non-uniformity in the representation. The product includes instructions to generate, from the non-uniformity detected, feedback information for improving the uniformity of a clearing profile of the first polishing process for a subsequent polishing cycle.

Abstract: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

Abstract: Methods and apparatus for feedback controlled polishing. A computer program product for generating feedback for chemical mechanical polishing. The product includes instructions operable to cause a processor to receive monitoring information during a current polishing cycle in which a first polishing process is performed on a substrate that includes a metal layer. The first polishing process clears the metal layer from the substrate during the current polishing cycle. The product includes instructions to calculate a representation of a clearing profile of the first polishing process. The calculation is based on the monitoring information received during the current polishing cycle. The product includes instructions to detect non-uniformity in the representation. The product includes instructions to generate, from the non-uniformity detected, feedback information for improving the uniformity of a clearing profile of the first polishing process for a subsequent polishing cycle.

Abstract: A plurality of portions of a substrate are monitored during polishing at a first polishing station with an in-situ monitoring system. A plurality of thicknesses are determined based on measurements by the in-situ monitoring system, and the plurality of pressures to apply to the plurality of regions of the substrate are calculated in a closed-loop control system. However, if a representative thickness of the layer is less than a threshold thickness, calculation of the plurality of pressures by the closed-loop control system is halted and a plurality of predetermined pressures are applied to the plurality of regions of the substrate.

Abstract: Conductive elements of a chemical mechanical polishing system may generate undesired eddy currents under the influence of a time-dependent magnetic field used in an eddy current monitoring system. To improve the accuracy of an eddy current monitoring system, elements that may contribute an undesired signal to the sensed eddy current signal may be fabricated from a non-conductive material such as plastic or ceramic. In some implementations, elements may be fabricated from non-magnetic materials.

Abstract: Conductive elements of a chemical mechanical polishing system may generate undesired eddy currents under the influence of a time-dependent magnetic field used in an eddy current monitoring system. To improve the accuracy of an eddy current monitoring system, elements that may contribute an undesired signal to the sensed eddy current signal may be fabricated from a non-conductive material such as plastic or ceramic. In some implementations, elements may be fabricated from non-magnetic materials.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: A polishing method is provided which simultaneously supplies both a polishing fluid and a conditioning fluid to a polishing pad, while a substrate is in moving contact with the polishing pad.

Abstract: A carrier head for chemical mechanical polishing that has a base having at least a portion formed of a polymer, a mounting assembly connected to the base having a surface for contacting a substrate, a retainer secured to the portion of the base to prevent the substrate from moving along the surface, and a dampening material secured between the retainer and the base.

Abstract: Methods and apparatuses are provided that may remove the build up of polishing by products from the polishing pad without the reduction in throughput associated with conventional ex-situ conditioning. The conditioning method comprises holding a wafer against a polishing pad with a 0 psi force, and applying a conditioning fluid to the polishing pad while holding the wafer against the polishing pad with a 0 psi force. Thereafter the conditioning fluid may be rinsed from the polishing pad or may remain on the polishing pad while polishing is commenced. The polishing apparatus has a controller programmed to perform the conditioning method.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of circular concentric grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.