Abstract: The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source, comprising an electrically conductive layer of a composition of molybdenum silicide and silicon nitride; (2) providing a heating element embedded in the solid state source; (3) applying an alternating/pulsed current to the heating element to heat the heating element; and (4) heating the electrically conductive layer of molybdenum silicide silicon nitride to at least seven hundred degrees using thermal conduction from the heating element resultant in the electrically conductive layer emitting infrared light in a range of 1.1 to 20 micrometers, where the infrared source operates continuously with heating and cooling of the molybdenum silicide silicon nitride through a differential of at least 200° C. occurring at least five and less than thirty times per second.

Abstract: The invention comprises a solid state infrared source and method of use thereof comprising: (1) an electrically conductive film, comprising a semi-transparent material, the semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from the electrically conductive film transmit to an outer surface of the electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers; (2) a first silicon nitride layer; and (3) a second silicon nitride layer, the electrically conductive film positioned between the first silicon nitride layer and the second silicon nitride layer, where applying an electric current of less than one Watt through the electrically conductive film raises a temperature of the electrically conductive film to in excess of eight hundred degrees centigrade in less than twenty milliseconds resultant in the infrared emissions.

Abstract: The invention comprises a solid state infrared source and method of use thereof comprising: (1) an electrically conductive film, comprising a semi-transparent material, the semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from the electrically conductive film transmit to an outer surface of the electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers; (2) a first silicon nitride layer; and (3) a second silicon nitride layer, the electrically conductive film positioned between the first silicon nitride layer and the second silicon nitride layer, where applying an electric current of less than one Watt through the electrically conductive film raises a temperature of the electrically conductive film to in excess of eight hundred degrees centigrade in less than twenty milliseconds resultant in the infrared emissions.

Abstract: The invention comprises a solid state infrared source and method of use thereof comprising: (1) an electrically conductive film, comprising a semi-transparent material, the semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from the electrically conductive film transmit to an outer surface of the electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers; (2) a first silicon nitride layer; and (3) a second silicon nitride layer, the electrically conductive film positioned between the first silicon nitride layer and the second silicon nitride layer, where applying an electric current of less than one Watt through the electrically conductive film raises a temperature of the electrically conductive film to in excess of eight hundred degrees centigrade in less than twenty milliseconds resultant in the infrared emissions.

Abstract: The invention comprises a solid state infrared source apparatus and method of use thereof, comprising: (1) an electrically conductive film comprising: an emission side and a back side opposite the emission side and a surface area to height ratio of at least five hundred to one; (2) a first dielectric film contacting the back side of the electrically conductive film; and (3) a reflective layer, the reflective layer embedded in the solid state source between the first dielectric film and a support layer, wherein the electrically conductive film emits infrared light upon warming with an electrical current during use, the infrared light sequentially reflecting off of the reflective layer, transmitting through the electrically conductive film, and emitting from the solid state source. Preferably the electrically conductive film comprises zinc oxide and the reflective layer is deposited into a basin in a second dielectric film.

Abstract: The invention comprises an infrared source and method of use thereof comprising the steps of: (1) providing a solid state source, comprising: a film of oxide particles comprising an average particle size of less than ten micrometers, gaps between the oxide particles comprising an average gap width of less than ten micrometers, and a heating element embedded in the solid state source; (2) applying a pulsed current to the heating element to heat the heating element; and (3) heating the film of oxide particles to at least seven hundred degrees using thermal conduction from the heating element resultant in the film of oxide particles emitting infrared light in a range of 1.1 to 20 micrometers, where the infrared source operates continuously with heating and cooling of the oxide particles through a differential of at least 200° C. occurs at least five and less than thirty times per second.