Abstract: A symmetrical divide-by-2 circuit has a master latch made up of two inverters. The circuit has an inverter on each output. The capacitance of these inverters forms a dynamic slave latch that is connected to the master latch through a transmission gate on each master latch output. The data is transferred from the master latch to the dynamic slave latch every clock cycle by an enable clock and an inverse of the enable clock. Capacitance leakage is reduced by the transmission gates until the next clock cycle. The circuit is clocked by a one-shot clock that is self-aligning to the latest transition of either the enable clock or inverse enable clock.

Abstract: A symmetrical divide-by-2 circuit has a master latch made up of two inverters. The circuit has an inverter on each output. The capacitance of these inverters forms a dynamic slave latch that is connected to the master latch through a transmission gate on each master latch output. The data is transferred from the master latch to the dynamic slave latch every clock cycle by an enable clock and an inverse of the enable clock. Capacitance leakage is reduced by the transmission gates until the next clock cycle. The circuit is clocked by a one-shot clock that is self-aligning to the latest transition of either the enable clock or inverse enable clock.

Abstract: Memory device is described that utilizes a reduced number of sense amplifiers to sense the data bits of a selected column page. The sense amplifiers are multiplexed and the read data values latched, allowing the sense amplifiers to sense the next set of data lines from the selected column page before the currently latched values have been read out. A specialized decoder and a latch control circuit allows there to be no gaps or latencies while reading data from the memory due to reloading the read latches or in multiplexing the sense amplifiers. The design allows there to be no gaps or latencies while reading data from the memory due to reloading the read latches or multiplexing the sense amplifiers to sense a following set of data bit lines.

Abstract: A transition of an external enable signal generates a reset pulse to a counter to set the counter into a known state. The counter, clocked by the external clock signal, generates a clock signal that is decoded by a fuse decoder circuit. The fuse decoder circuit outputs a selection signal to a trim circuit. The trim circuit produces a voltage selection signal, such as a resistance value, that is indicated by the selection signal for use by an internal reference voltage generation circuit. The output of the internal reference voltage generation circuit is compared to the external reference voltage. The counter circuit continues counting until the internal reference voltage is equal to or greater than the external reference voltage. The counter is disabled and the final count that produced the proper internal reference voltage is stored in non-volatile memory cells for future use.

Abstract: An apparatus and method for compensating for a decreasing internal voltage that is generated from a higher external voltage. In response to the internal voltage decreasing in excess of a voltage margin, the amount by which the higher external voltage is reduced in generating the internal voltage is adjusted to raise the internal voltage.

Abstract: An apparatus and method for compensating for a decreasing internal voltage that is generated from a higher external voltage. In response to the internal voltage decreasing in excess of a voltage margin, the amount by which the higher external voltage is reduced in generating the internal voltage is adjusted to raise the internal voltage.

Abstract: An output buffer circuit that compensates for ambient temperature changes facilitates more consistent current drive capacity across a range of ambient temperatures. The number of output buffer stages utilized to generate the data output signal is varied in response to changes in ambient temperature.

Abstract: A transition of an external enable signal generates a reset pulse to a counter to set the counter into a known state. The counter, clocked by the external clock signal, generates a clock signal that is decoded by a fuse decoder circuit. The fuse decoder circuit outputs a selection signal to a trim circuit. The trim circuit produces a voltage selection signal, such as a resistance value, that is indicated by the selection signal for use by an internal reference voltage generation circuit. The output of the internal reference voltage generation circuit is compared to the external reference voltage. The counter circuit continues counting until the internal reference voltage is equal to or greater than the external reference voltage. The counter is disabled and the final count that produced the proper internal reference voltage is stored in non-volatile memory cells for future use.

Abstract: A transition of an external enable signal generates a reset pulse to a counter to set the counter into a known state. The counter, clocked by the external clock signal, generates a clock signal that is decoded by a fuse decoder circuit. The fuse decoder circuit outputs a selection signal to a trim circuit. The trim circuit produces a voltage selection signal, such as a resistance value, that is indicated by the selection signal for use by an internal reference voltage generation circuit. The output of the internal reference voltage generation circuit is compared to the external reference voltage. The counter circuit continues counting until the internal reference voltage is equal to or greater than the external reference voltage. The counter is disabled and the final count that produced the proper internal reference voltage is stored in non-volatile memory cells for future use.

Abstract: An output buffer circuit that compensates for ambient temperature changes facilitates more consistent current drive capacity across a range of ambient temperatures. The number of output buffer stages utilized to generate the data output signal is varied in response to changes in ambient temperature.

Abstract: A method and apparatus for providing a preselected voltage to test or repair a semiconductor device. The apparatus includes a one-stage pump and a transfer device. The one-stage pump is adapted to access a first voltage and provide a second voltage using the first voltage. The transfer device is capable of providing the first voltage to a node using the second voltage.

Abstract: An apparatus and method for compensating for a decreasing internal voltage that is generated from a higher external voltage. In response to the internal voltage decreasing in excess of a voltage margin, the amount by which the higher external voltage is reduced in generating the internal voltage is adjusted to raise the internal voltage.

Abstract: An apparatus and method for compensating for a decreasing internal voltage that is generated from a higher external voltage. In response to the internal voltage decreasing in excess of a voltage margin, the amount by which the higher external voltage is reduced in generating the internal voltage is adjusted to raise the internal voltage.

Abstract: A power supply, and a method of controlling the power supply, in which more or less power capacity of the power supply is activated depending on the state of a digital data signal on a data bus. The power supply has a control circuit which detects the number of “zero” bits present on the data bus, and responsively activates one or more of a plurality of power supply circuits such as charge pump circuits. The outputs of the charge pump circuits are mutually connected to a driver adapted to program memory cells of a flash memory circuit.

Abstract: An apparatus and method for compensating for a decreasing internal voltage that is generated from a higher external voltage. In response to the internal voltage decreasing in excess of a voltage margin, the amount by which the higher external voltage is reduced in generating the internal voltage is adjusted to raise the internal voltage.

Abstract: An apparatus and method for compensating for a decreasing internal voltage that is generated from a higher external voltage. In response to the internal voltage decreasing in excess of a voltage margin, the amount by which the higher external voltage is reduced in generating the internal voltage is adjusted to raise the internal voltage.

Abstract: A semiconductor memory device that operates as a normal memory device as long as existing memory is being addressed, but appears to external hardware and software to have a larger size (or standard size) memory array than is actually present in the semiconductor memory device is disclosed. To external hardware and software, the semiconductor memory device operates as if it has more addressable memory cells than in fact actually exist in the memory array. When addressing missing memory cells, the semiconductor memory device emulates or mimics their presence for the benefit of the external hardware or software. Preferably, the semiconductor memory device is a non-volatile electrically alterable semiconductor memory device. A method for emulating missing memory cells is also disclosed.

Abstract: An EEPROM memory array divided into a plurality of sectors having R word lines with each sector containing S bit lines, for a total of R.times.S bit-line/word-line intersections. At each intersection there is a single transistor EEPROM memory cell with its drain connected to a bit line and its gate connected to a word line. The sources of all the cells in each sector are interconnected to a sector select line. The Fowler-Nordheim tunneling mechanism is used to accomplish erase and write operations to the memory cells. The embodiment also includes a data latch array having R data latch rows, each of which is dedicated to storing a group of S data bits to be serially written into cells of the memory via a particular one of the R word lines. A data input-output buffer has S data inputs for supplying groups of S data bits in sequential steps to S latches within each of the data latch rows, to form S columns of R data bits within the data latch array.

Abstract: An apparatus for page mode programming of an EEPROM cell array with false loading protection is disclosed. The system includes a flip-flop operatively connected to a bit line for storing information to be loaded into an EEPROM memory cell, and false loading protection circuitry operatively connected to the bit line for preventing the false loading of an erroneous signal into the flip-flop and/or an EEPROM cell.

Abstract: An apparatus for page mode programming of a memory cell with false loading protection is disclosed. The apparatus discharges any residual voltage left on the bit line after a read operation to prevent this voltage from being erroneously loaded into temporary storage apparatus associated with the bit line. In a preferred embodiment, two transistors are placed in series between the bit line and the array V.sub.ss line. A first transistor is controlled by a signal indicating that information is to be loaded into the temporary storage apparatus. The second transistor is controlled by a signal indicating that no memory cell associated with the bit line has been selected for programming.