Abstract: A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate comprising at least one capacitor structure formed on a surface, the capacitor structure comprising a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material comprises columnar grains.

Abstract: A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate comprising at least one capacitor structure formed on a surface, the capacitor structure comprising a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material comprises columnar grains.

Abstract: An array capacitor is described for use with an integrated circuit (IC) mounted on an IC package. The array capacitor includes a number of first conductive layers interleaved with a number of second conductive layers and a number of dielectric layers separating adjacent conductive layers. The array capacitor further includes a number of first conductive vias to electrically connect the first conductive layers and a number of second conductive vias to electrically connect the second conductive layers. The array capacitor is provided with openings which are configured to enable pins from an IC package to pass through.

Abstract: An integrated broadband array capacitor includes at least two regions with varying capacitance and response times. The broadband array capacitor is disposable on a socket or is integral with a socket. A method of operating the broadband array capacitor includes responding to load transients from each of the at least two regions. A computing system is also disclosed that includes the broadband array capacitor.

Abstract: An integrated circuit (IC) package includes a substrate and an IC die mounted on a first side of the substrate. The IC package also includes a plurality of capacitors mounted on a second side of the substrate. The second side is opposite to the first side. The IC package further includes a plurality of conductive contact pads formed on the second side of the substrate and interspersed among the capacitors. Other embodiments are described and claimed.

Abstract: An array capacitor is provided. The array capacitor includes a plurality of ground planes inside a dielectric substrate, and a plurality of ground vias. The ground vias electrically connect the ground planes together. Further, the ground vias are connected to ground terminals of the array capacitor to enable electrical coupling between the ground planes and the ground terminals. The array capacitor further includes a plurality of power planes inside the dielectric substrate. The power planes and the ground planes are arranged alternatively inside the dielectric substrate. Each power plane comprises a plurality of power-plane-sections which are mutually electrically isolated. The array capacitor also includes a plurality of power vias which electrically connect the power planes together. Further, the power vias are connected to power terminals of the array capacitor to enable electrical coupling between the power planes and power terminals.

Abstract: A thermal solution having a thermal energy transfer path and an isolation layer disposed on the thermal energy path is described herein.

Abstract: In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

Abstract: An apparatus comprises a first plurality of contacts disposed on a first side of the apparatus, adapted to engage with a first corresponding plurality of contacts on an external integrated circuit package. The apparatus further comprises a plurality of capacitive storage structures selectively coupled to the first plurality of contacts, one or more traces, and a second plurality of contacts disposed on the first side. The second plurality of contacts are adapted to engage with a second corresponding plurality of contacts on the external integrated circuit package, wherein at least two of the second plurality of contacts are adapted to be coupled to at least a first trace of the one or more traces to form a first resistive structure.

Abstract: An apparatus comprises a first plurality of contacts on a first side of the apparatus adapted to interface with a corresponding plurality of contacts on an integrated circuit package. The apparatus further comprises a second plurality of contacts on a second side of the apparatus adapted to interface with a corresponding plurality of grid array leads and a plurality of capacitive storage structures coupled to the first and second plurality of contacts.

Abstract: In one embodiment, a method including providing a semiconductor pad package having a first pad and a second pad is disclosed. A first layer comprising a first metal is deposited on the first pad using a first process. A second metal is then deposited on the first pad and the first layer using a second process. In another embodiment, the first process comprises and electroplating process, and the second process comprises a direct immersion gold (DIG) process. In a further embodiment, the first pad is a power or ground pad, and the second pad is a signal pad.

Abstract: In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

Abstract: An integrated circuit package includes a first capacitor supported by a surface of a substrate, and a second capacitor supported by the surface of the substrate. The first capacitor is within a die shadow region, and the second capacitor lies outside of the die shadow region.

Abstract: An integrated circuit (IC) package includes a substrate and an IC die mounted on a first side of the substrate. The IC package also includes a plurality of capacitors mounted on a second side of the substrate. The second side is opposite to the first side. The IC package further includes a plurality of conductive contact pads formed on the second side of the substrate and interspersed among the capacitors. Other embodiments are described and claimed.

Abstract: An array capacitor is described for use with an integrated circuit (IC) mounted on an IC package. The array capacitor includes a number of first conductive layers interleaved with a number of second conductive layers and a number of dielectric layers separating adjacent conductive layers. The array capacitor further includes a number of first conductive vias to electrically connect the first conductive layers and a number of second conductive vias to electrically connect the second conductive layers. The array capacitor is provided with openings which are configured to enable pins from an IC package to pass through.

Abstract: In one embodiment, a method including providing a semiconductor pad package having a first pad and a second pad is disclosed. A first layer comprising a first metal is deposited on the first pad using a first process. A second metal is then deposited on the first pad and the first layer using a second process. In another embodiment, the first process comprises and electroplating process, and the second process comprises a direct immersion gold (DIG) process. In a further embodiment, the first pad is a power or ground pad, and the second pad is a signal pad.

Abstract: In some embodiments, an article of manufacture includes a metal layer and a first dielectric layer in contact with a first face of the metal layer. The article of manufacture also includes a second dielectric layer in contact with a second face of the metal layer. The second face of the metal layer is opposite to the first face of the metal layer. The metal layer may be a continuous sheet having slots formed therein to allow the first and second dielectric layers to adhere to each other by way of the slots.

Abstract: A semiconductor device package includes multiple built-up layers of metal sandwiching non-conductive layers. The metal layers have grids of degassing holes arranged in rows and columns. The rows and columns are locatable via a first coordinate system. Signal traces are embedded within the non-conductive layers such that the signal traces are also sandwiched between the metal layers with degassing holes. The signal traces generally run at zero degrees, 45 degrees, and 90 degrees relative to a second coordinate system. The first coordinate system is rotated relative to the second coordinate system to lower impedance variations of different traces. Impedance variations decrease due to the decreased variation in the number of degassing holes passed over or under by a trace. The grid of degassing holes on one metal layer can be offset in two dimensions relative to the degassing holes on another layer.

Abstract: An integrated circuit chip package having a metal substrate core having two or more electrically isolated regions, wherein the electrically isolated regions of the metal substrate core may be coupled with voltage rails of an integrated circuit chip.

Abstract: A system may include an integrated circuit package having a package power contact and a package ground contact, and an interposer to physically receive a portion of the package and including a lip. A system may also include a first card having a card power contact to interface with the package power contact and a card ground contact to interface with the package ground contact, where the first card defines an opening to receive a portion of the interposer, and the lip is to support a portion of the first card.