Abstract: A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.

Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

Abstract: A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.

Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1> 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.

Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.

Abstract: Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.

Abstract: A light emitting device includes a light emitting structure and a distributed Bragg reflector (DBR) structure disposed thereon. The light emitting structure includes an n-type confinement layer, an active layer disposed on the n-type confinement layer, and a p-type confinement layer disposed on the active layer opposite to the n-type confinement layer. The n-type and p-type confinement layers are disposed proximal and distal to the DBR structure, respectively. The DBR structure includes first to Nth DBR units. The first and Nth DBR units are disposed proximal and distal to the light emitting structure, respectively. Each of the first to Nth DBR units has a center reflection wavelength defined by ?+(z?1)?0.

Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1>1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.

Abstract: A micro device includes a securing layer, a plurality of micro device units that are separated from each other and that are spaced apart from the securing layer, and a connecting layer that interconnects the micro device units in at least one group of two or more and that is connected to the securing layer so that the micro device units are connected to the securing layer through the connecting layer. A method of making the micro device is also provided.

Abstract: A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.

Abstract: A light-emitting diode includes an epitaxial-laminated layer, including an n-type ohmic contact layer; a first n-type transition layer; a second n-type transition layer; an n-type confinement layer; an active layer; a p-type confinement layer; a p-type window layer; a first electrode over an upper surface of the epitaxial-laminated layer; and a conductive substrate located over a bottom surface of the epitaxial-laminated layer.

Abstract: A flip-chip light-emitting diode chip with a patterned transparent bonding layer includes: an epitaxial laminated layer, having an upper surface and a lower surface opposite to each other, which further includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. Part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer. A first electrode is over the surface of the n-type semiconductor layer, and a second electrode is over the surface of the exposed p-type semiconductor layer. A transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region. A patterned transparent bonding medium layer fills up the recess region of the transparent medium layer, and the upper surface is at the same plane with the upper surface of the transparent medium layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

Abstract: A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.

Abstract: A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.

Abstract: An invisible-light light-emitting diode includes an N-type ohmic contact semiconductor layer, an N-type current spreading layer, an N—GaAs visible-light absorption layer, an N-type cladding layer, a light-emitting layer, a P-type cladding layer and a P-type ohmic contact semiconductor layer. In the invisible-light light-emitting diode, the absorption layer is GaAs, which can effectively remove all visible light when current density is >1 A/mm2, and essentially all visible light when current density is below 3 A/mm2. This effectively solves the red dot effect of invisible-light light-emitting diodes.

Abstract: A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.