Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.

Abstract: An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InxGa1-xAs. The cladding layer of InxGa1-xAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.

Abstract: A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer.

Abstract: An invisible-light light-emitting diode includes an N-type ohmic contact semiconductor layer, an N-type current spreading layer, an N—GaAs visible-light absorption layer, an N-type cladding layer, a light-emitting layer, a P-type cladding layer and a P-type ohmic contact semiconductor layer. In the invisible-light light-emitting diode, the absorption layer is GaAs, which can effectively remove all visible light when current density is >1 A/mm2, and essentially all visible light when current density is below 3 A/mm2. This effectively solves the red dot effect of invisible-light light-emitting diodes.

Abstract: A light-emitting diode chip includes an electrical connection layer is arranged over the light-emitting surface of the light-emitting epitaxial laminated layer, which is not connected with isolation of the dielectric layer. After CMP treatment, the flat surface is plated with a transparent current spreading layer, which reduces horizontal conduction resistance of the transparent current spreading layer and replaces the metal spreading finger for horizontal conduction.

Abstract: A flip-chip light-emitting diode chip with a patterned transparent bonding layer includes: an epitaxial laminated layer, having an upper surface and a lower surface opposite to each other, which further includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. Part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer. A first electrode is over the surface of the n-type semiconductor layer, and a second electrode is over the surface of the exposed p-type semiconductor layer. A transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region. A patterned transparent bonding medium layer fills up the recess region of the transparent medium layer, and the upper surface is at the same plane with the upper surface of the transparent medium layer.

Abstract: A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.

Abstract: A flip-chip multi junction solar cell chip integrated with a bypass diode includes from up to bottom: a glass cover; a transparent bonding layer; a front electrode; an n/p photoelectric conversion layer; a p/n tunnel junction; a structure layer of the n/p bypass diode; a first backside electrode; a second backside electrode. The solar cell chip also includes at least a through hole extending through the n/p photoelectric conversion layer, the p/n tunnel junction and the structure layer of the n/p bypass diode. An ultra-thin substrate-less cell can therefore be provided without occupying effective light receiving areas, greatly improving cell heat dissipation. With a light weight, the chip can also have advantages in space power application.

Abstract: A light-emitting diode includes: an epitaxial-laminated layer having from bottom up: an n-type ohmic contact layer, a first n-type transition layer, an n-type etching-stop layer, a second n-type transition layer, an n-type confinement layer, an active layer, a p-type confinement layer, a p-type transition layer and a p-type window layer; a p electrode on the upper surface of the p-type window layer; a metal bonding layer over the bottom surface of the n-type ohmic contact layer, wherein, the portion corresponding to the p electrode position extends upwards and passes through the n-type ohmic contact layer and the first n-type transition layer, till the n-type etching-stop layer, thereby forming a current distribution adjustment structure such that the injected current would not flow towards the epitaxial-laminated layer right below the p electrode; and a conductive substrate over the bottom surface of the metal bonding layer.

Abstract: A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer.

Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.

Abstract: A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

Abstract: A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer, an active layer, and a second semiconductor layer electrically dissimilar to the first semiconductor layer; a transparent conductive layer with an opening portion; the first electrode electrically connected with the first semiconductor layer; and the second electrode electrically connected with the second semiconductor layer; the second electrode fills the opening portion, and the position where the second electrode contacts the transparent conductive layer is arranged with a recessed portion, and the second electrode is embedded in the transparent conductive layer.

Abstract: A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.

Abstract: A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.

Abstract: A fabrication method of nitride LEDs, which reduces electron leakage and efficiency droop and improves hole concentration and light emitting efficiency, the method including: (1) providing an intermediate substrate; (2) growing a P-type semiconductor layer and a first bonding layer on the intermediate substrate in sequence; (3) providing a permanent substrate; (4) growing an N-type semiconductor layer, a light emitting layer and a second bonding layer on the permanent substrate; (5) bonding the intermediate substrate with the P-type semiconductor layer and the permanent substrate with the N-type semiconductor layer and the light emitting layer through the first bonding layer and the second bonding layer.

Abstract: A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.

Abstract: A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

Abstract: A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.