Patents by Inventor E. Ray

E. Ray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220106667
    Abstract: Provided are methods, systems, and facilities for screening, purification, and recovery of specific heavy metals and/or rare earth elements (REEs) from input materials including low-grade mines, tailings, sludge, rare earth, silt, and specific elements of Waste Electrical and Electronic Equipment (WEEE) by means of efficient microbial and/or algae screening method. The system and method of algae and microbial screening addresses the main problem of inefficient screening speed in the method of algae and microbial screening for recovery of specific heavy metals and/or REEs, which is too slow and time-consuming by integrated acceleration of the cultivation and screening of microbial and algae species of up to 50 times faster than current efficiencies by the application of a recovery rate metric model.
    Type: Application
    Filed: October 1, 2021
    Publication date: April 7, 2022
    Inventors: Philip Huang, E-Ray Huang
  • Patent number: 11139165
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: October 5, 2021
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Publication number: 20210302454
    Abstract: Disclosed herein is an apparatus for facilitating chemical analysis based on color principle. Accordingly, the apparatus may include a base located at the bottom of the apparatus. Further, the base may be composed of a rectilinear receptacle. Further, the apparatus may include an intermediate plate located above the base. Further, the apparatus may include a hood located atop the intermediate plate. Further, the hood may include a hood rectilinear receptacle. Further, the hood rectilinear receptacle may be secured to the intermediate plate using a fastening mechanism. Further, the apparatus may include a roundtable housed within the hood. Further, the apparatus may include a motion system passing through and engaging with the roundtable and the hood. Further, the apparatus may include an analysis system embedded into at least one board suspended within the base. Further, the analysis system facilitates automated chemical analysis of a plurality of extraneous vials.
    Type: Application
    Filed: March 26, 2020
    Publication date: September 30, 2021
    Inventors: Philip Huang, E-Ray Huang, Guozhi Lin
  • Patent number: 11133184
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: September 28, 2021
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Patent number: 11133183
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: September 28, 2021
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Patent number: 11133182
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: September 28, 2021
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Patent number: 11124162
    Abstract: An automated wash rig is disclosed for cleaning the interior of a freight container. The wash rig may be transported atop a mobile platform or carriage and inserted into the interior of the freight container. During the cleaning process, the wash rig may travel along the length of the floor of the freight container. Washers (e.g., spray nozzles) on the wash rig may be used to direct cleaning fluid at the surfaces of the interior of the freight container, while dryers (e.g., air knives) on the wash rig may be used to dry off those surfaces. As the wash rig traverses the entire length of the freight container, the entire interior of the freight container is washed and dried. The wash rig may also have ultraviolet (UV) lamps which can provide UV light to sanitize the interior of the freight container during this process.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 21, 2021
    Assignee: HEALTHY TRAILER, LLC
    Inventors: Pamela Lugg Young, Michael E. Ray, Lora Eade, James R. Lugg, Alvin Trentelman, David Philip Robinson
  • Patent number: 11085890
    Abstract: According to some embodiments, a system for facilitating non-invasive in-situ imaging of metabolic processes of plants is disclosed. The system may include a frame comprises a frame body and a base member. Further, the system may include at least one rare-earth permanent magnet disposed on the frame. Further, the system may include at least one arm coupled to the frame. Further, the system may include at least one coil disposed on a first end of an arm of the at least one arm. Further, the system may include at least one sensor disposed on the frame. Further, the system may include a processing device communicatively coupled with the at least one sensor and the at least one coil. Further, the system may include an actuator communicatively coupled with the processing device. Further, the system may include a presentation device disposed on the frame.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: August 10, 2021
    Assignee: ROYAL BIOTECH INC
    Inventors: Philip Huang, E-Ray Huang, Guozhi Lin, En I Tu
  • Publication number: 20210239631
    Abstract: According to some embodiments, a system for facilitating non-invasive in-situ imaging of metabolic processes of plants is disclosed. The system may include a frame comprises a frame body and a base member. Further, the system may include at least one rare-earth permanent magnet disposed on the frame. Further, the system may include at least one arm coupled to the frame. Further, the system may include at least one coil disposed on a first end of an arm of the at least one arm. Further, the system may include at least one sensor disposed on the frame. Further, the system may include a processing device communicatively coupled with the at least one sensor and the at least one coil. Further, the system may include an actuator communicatively coupled with the processing device. Further, the system may include a presentation device disposed on the frame.
    Type: Application
    Filed: January 31, 2020
    Publication date: August 5, 2021
    Inventors: Philip Huang, E-Ray Huang, Guozhi Lin, En I Tu
  • Publication number: 20210206678
    Abstract: Disclosed herein is an apparatus for facilitating purification of sludge and tailing, in accordance with some embodiments. Accordingly, a sedimentation unit receives sludge and tailing in a first tank, separates wastewater from the sludge and the tailing, and transfers the wastewater from the first tank to a second tank. Further, a centrifugal unit creates a vortex in the wastewater. Further, a thermal hydrolysis unit coagulates a second impurity of the wastewater using coagulants and transfers the wastewater from the second tank to a third tank. Further, a digesting unit digests a macromolecule of the wastewater into a compound and transfers the wastewater from the third tank to a fourth tank. Further, a nutrient removal unit filters the wastewater from the compound and transfers the wastewater from the fourth tank to a fifth tank. Further, a reservoir unit disinfects the wastewater and stores the wastewater in the fifth tank.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 8, 2021
    Inventors: Philip Huang, E-Ray Huang, En I. Tu, Guozhi Lin
  • Patent number: 10756267
    Abstract: A first memory unit includes a first bipolar-variable-resistance and a first control transistor. This first memory unit is configured to provide a function of a flash memory with first bipolar-variable-resistance transistor serving as a storage. In addition, a second bipolar-variable-resistance transistor and a second control transistor with the same structure as first memory unit can be used to serve as a second memory unit. An isolation transistor is connected between the first memory unit and the second memory unit. The isolation transistor can electrically isolate the first memory unit and the second memory unit from each other, thereby preventing sneak current from flowing between arrays among memory circuits.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: August 25, 2020
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Steve S. Chung, E-Ray Hsieh
  • Publication number: 20200235382
    Abstract: Alkaline electrochemical cells are provided, wherein dissolved zinc oxide or zinc hydroxide is included at least in the free electrolyte solution, and/or solid zinc oxide or zinc hydroxide is included in the anode, so as to slow formation of a zinc oxide passivation layer on a zinc electrode. Methods for preparing such cells are also provided.
    Type: Application
    Filed: November 5, 2019
    Publication date: July 23, 2020
    Inventors: Robert P. Johnson, Robert E. Ray, JR., Weiwei Huang, Zhufang Liu, Steven J. Limmer
  • Publication number: 20200043727
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Application
    Filed: October 7, 2019
    Publication date: February 6, 2020
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Publication number: 20200043726
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Application
    Filed: October 7, 2019
    Publication date: February 6, 2020
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Publication number: 20200020526
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Publication number: 20200020525
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Patent number: 10504721
    Abstract: The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: December 10, 2019
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
    Inventors: Steve S. Chung, E. Ray Hsieh, Kuan-Yu Chang
  • Publication number: 20190023234
    Abstract: An automated wash rig is disclosed for cleaning the interior of a freight container. The wash rig may be transported atop a mobile platform or carriage and inserted into the interior of the freight container. During the cleaning process, the wash rig may travel along the length of the floor of the freight container. Washers (e.g., spray nozzles) on the wash rig may be used to direct cleaning fluid at the surfaces of the interior of the freight container, while dryers (e.g., air knives) on the wash rig may be used to dry off those surfaces. As the wash rig traverses the entire length of the freight container, the entire interior of the freight container is washed and dried. The wash rig may also have ultraviolet (UV) lamps which can provide UV light to sanitize the interior of the freight container during this process.
    Type: Application
    Filed: July 18, 2018
    Publication date: January 24, 2019
    Inventors: Pamela Lugg Young, Michael E. Ray, Lora Eade, James R. Lugg, Alvin Trentelman, David Philip Robinson
  • Patent number: 10127993
    Abstract: One time programming and repeatably random read integrated circuit memory has a storage device that programs the information by using dielectric-fuse mechanism. The main characteristics of dielectric fuse mechanisms is that by applying an electric field on the dielectrics, the ions or atoms in the dielectrics are drifted-out, or the dielectrics are burned-out, that create damage of the dielectric structure in a form of porosity, and the conductivity (resistivity) of tunneling current through the dielectrics changes the state from high conductivity (resistivity) to low conductivity (resistivity). The dielectric fuse mechanism has been integrated in VLSI circuits, completed the validation, and implemented by the fabrication of CMOS process.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: November 13, 2018
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Steve S. Chung, E-Ray Hsieh, Zhi-Hong Huang
  • Patent number: D876662
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: February 25, 2020
    Assignee: ROYAL BIOTECH INC
    Inventors: Philip Huang, E-Ray Huang