Abstract: Dialyzer systems can consolidate multiple technologies and functionalities of blood treatment systems in a significantly integrated fashion. For example, this disclosure describes dialyzer systems that include a magnetically driven and magnetically levitating pump rotor integrated into the dialyzer. Such a dialyzer can be used with treatment modules that include a magnetic field-generating pump drive unit. In some embodiments, the dialyzers include pressure sensor chambers with flexible membranes with which corresponding pressure transducers of the treatment modules can interface to detect arterial and/or venous pressures.

Abstract: An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

Abstract: An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.

Abstract: A process condition measurement apparatus is disclosed. The apparatus includes a substrate, one or more insulation portions, a first plurality of interconnect traces, a second plurality of interconnect traces, and a plurality of sensors disposed on the substrate. The second plurality of interconnect traces is disposed over the first plurality of interconnect traces and intersects at a plurality of locations to form a matrix of interconnect junctions across one or more locations of the substrate. A respective sensor is electrically coupled to a respective trace of the first and second plurality of interconnect traces. The respective sensor is individually readable by addressing the respective trace of the first and second plurality of interconnect traces.

Abstract: An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.

Abstract: A sensor for detecting a temperature distribution imparted on a substrate in an environment is disclosed. The sensor includes a sensor substrate with one or more temperature sensing elements formed on the sensor substrate. In embodiments, a temperature sensing element includes at least one cavity with a thermally expandable material disposed within the cavity and a channel extending from the cavity with a slug disposed within the channel. In embodiments, the cavity has a fixed volume and is enclosed by a cover layer disposed or formed over the cavity. The thermally expandable material is configured to extend from the cavity into the channel to actuate the slug from a first position within the channel to at least a second position within the channel, where the position of the slug is indicative of a temperature of a respective portion of the sensor substrate.

Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

Abstract: An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

Abstract: A sensor for detecting a temperature distribution imparted on a substrate in an environment is disclosed. The sensor includes a sensor substrate with one or more temperature sensing elements formed on the sensor substrate. In embodiments, a temperature sensing element includes at least one cavity with a thermally expandable material disposed within the cavity and a channel extending from the cavity with a slug disposed within the channel. In embodiments, the cavity has a fixed volume and is enclosed by a cover layer disposed or formed over the cavity. The thermally expandable material is configured to extend from the cavity into the channel to actuate the slug from a first position within the channel to at least a second position within the channel, where the position of the slug is indicative of a temperature of a respective portion of the sensor substrate.

Abstract: An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly.

Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly.

Abstract: An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

Abstract: A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

Abstract: Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the substrate device on the substrate support surface. The substrate device and the substrate support surface may have counterpart coarse position units and fine position units. The system may measure coarse positional offsets between the first and second coarse position units, re-position the substrate device on the substrate support surface based on the coarse positional offsets, and subsequently measure fine positional offsets between the first and second fine position units. In some implementations, the substrate device is integrally coupled to the substrate handler via a wireless communication link in order to communicate position information as feedback for further placement.

Abstract: A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Aspects of the present disclosure describe a smart docking station. The smart docking station may contain a data transfer and an electrical connection which allow a sensor wafer to be charged and to upload and download data. The smart docking station may be located at an off-track storage position above a tool. This location enables an automated materials handling system (AMHS) to retrieve the sensor wafer and deliver it to a tool requiring analysis. The sensor wafer may be stored in a smart front opening unified pod (FOUP). It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.