Patents by Inventor Edoardo Zanetti

Edoardo Zanetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE STRUCTURE
    Publication number: 20190172715
    Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.
    Type: Application
    Filed: December 4, 2018
    Publication date: June 6, 2019
    Inventors: Edoardo ZANETTI, Simone RASCUNÁ, Mario Giuseppe SAGGIO, Alfio GUARNERA, Leonardo FRAGAPANE, Cristina TRINGALI
  • Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
    Patent number: 8580640
    Abstract: An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: November 12, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Mario Giuseppe Saggio, Edoardo Zanetti, Ferruccio Frisina
  • Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
    Patent number: 8344449
    Abstract: An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: January 1, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Mario Giuseppe Saggio, Edoardo Zanetti, Ferruccio Frisina
  • MANUFACTURING PROCESS OF A POWER ELECTRONIC DEVICE INTEGRATED IN A SEMICONDUCTOR SUBSTRATE WITH WIDE BAND GAP AND ELECTRONIC DEVICE THUS OBTAINED
    Publication number: 20100163888
    Abstract: An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type.
    Type: Application
    Filed: December 17, 2009
    Publication date: July 1, 2010
    Applicant: STMICROELECTRONICS S.R.L
    Inventors: Mario Giuseppe SAGGIO, Edoardo ZANETTI, Ferruccio FRISINA