Abstract: Methods and apparatuses for forming a device structure including a high-thermal-conductivity substrate are disclosed herein. A method forming such a device structure may comprise forming an active layer over a first substrate in a manner such that a frontside of the active layer faces the first substrate and a backside of the active layer faces away from the first substrate, forming a second substrate over the backside of the active layer, and removing the first substrate to expose the frontside of the active layer. Other embodiments are described and claimed.

Abstract: A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.