Abstract: Systems and methods for presenting CRM data. Users may configure what to display on a custom report and how to arrange and display the content (e.g., size, color, theme), so that they can visualize the CRM data the way they want. A data visualization interface may be used to generate the custom report, and may use HTML to specify the CRM data to be displayed and their location on the custom report according to user configuration. The data visualization interface may use JavaScript for specifying the objects and fields users want to query to obtain the CRM data to fill up the custom report. An API may communicate with the JavaScript in the data visualization interface and then query data and objects in the CRM to get a result set. The API may be a unified API which may work across multiple platforms and query various types of database, e.g., iOS, Windows, and the browser for Salesforce online.

Abstract: Systems and methods for processing user requests for updating data in a CRM system. When a user requests to update data in the CRM system, it is determined if the requested data change involves a DCR-controlled field. If yes, the requested data change may be routed to the MDM system for validation first and the data change may not be used to update the CRM until the validation is successful. If the requested data change does not involve any DCR-controlled field, it may update the CRM immediately.

Abstract: Systems and methods for generating call reports which may allow access to the child call for each selected attendee via the group call, and enable users to capture data and make edits to detailing and sampling information unique to each attendee directly in the child call. Access to controls within the attendees section may enable mass entry of supported activities for a subset of attendees.

Abstract: Systems and methods for processing user requests for updating data in a CRM system. When a user requests to update data in the CRM system, it is determined if the requested data change involves a DCR-controlled field. If yes, the requested data change may be routed to the MDM system for validation first and the data change may not be used to update the CRM until the validation is successful. If the requested data change does not involve any DCR-controlled field, it may update the CRM immediately.

Abstract: Systems and methods for generating call reports which may allow access to the child call for each selected attendee via the group call, and enable users to capture data and make edits to detailing and sampling information unique to each attendee directly in the child call. Access to controls within the attendees section may enable mass entry of supported activities for a subset of attendees.

Abstract: A local power converter may include a controller to manipulate the operating point of a local power converter to cause the power point tracking feature of a central power converter to operate at a point determined by the controller. In some embodiments, the controller can manipulate the operating point of the local power converter by alternating between at least two modes. In some other embodiments, the controller can manipulate the operating point of the local power converter to provide a substantially constant slope. In some other embodiments, the controller can maintain a substantially constant impedance ratio. In some other embodiments, the controller enables perturbations from the power point tracking feature of the central power converter to reach the power source.

Abstract: A local power converter may include a controller to manipulate the operating point of a local power converter to cause the power point tracking feature of a central power converter to operate at a point determined by the controller. In some embodiments, the controller can manipulate the operating point of the local power converter by alternating between at least two modes. In some other embodiments, the controller can manipulate the operating point of the local power converter to provide a substantially constant slope. In some other embodiments, the controller can maintain a substantially constant impedance ratio. In some other embodiments, the controller enables perturbations from the power point tracking feature of the central power converter to reach the power source.

Abstract: Aspects of the disclosure pertain to methods of depositing conformal silicon oxide multi-layers on patterned substrates. The conformal silicon oxide multi-layers are each formed by depositing multiple sub-layers. Sub-layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS) and an oxygen-containing precursor into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. A plasma treatment may follow formation of sub-layers to further improve conformality and to decrease the wet etch rate of the conformal silicon oxide multi-layer film. The deposition of conformal silicon oxide multi-layers grown according to embodiments have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

Abstract: Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

Abstract: Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

Abstract: Aspects of the disclosure pertain to methods of depositing conformal silicon oxide multi-layers on patterned substrates. The conformal silicon oxide multi-layers are each formed by depositing multiple sub-layers. Sub-layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS) and an oxygen-containing precursor into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. A plasma treatment may follow formation of sub-layers to further improve conformality and to decrease the wet etch rate of the conformal silicon oxide multi-layer film. The deposition of conformal silicon oxide multi-layers grown according to embodiments have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

Abstract: Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

Abstract: Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

Abstract: Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

Abstract: Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

Abstract: Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

Abstract: Aspects of the disclosure pertain to methods of depositing conformal silicon oxide layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface having heterogeneous materials and/or a heterogeneous pattern density distribution. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on underlying material and pattern density while still being suitable for non-sacrificial applications. Reduction in dependence on pattern density is achieved by terminating deposition near the end of an incubation period. Multiple deposition cycles may be conducted in series since the beneficial nature of the incubation period may repeat after a pause in deposition.

Abstract: A local power converter may include a controller to manipulate the operating point of a local power converter to cause the power point tracking feature of a central power converter to operate at a point determined by the controller. In some embodiments, the controller can manipulate the operating point of the local power converter by alternating between at least two modes. In some other embodiments, the controller can manipulate the operating point of the local power converter to provide a substantially constant slope. In some other embodiments, the controller can maintain a substantially constant impedance ratio. In some other embodiments, the controller enables perturbations from the power point tracking feature of the central power converter to reach the power source.

Abstract: A signal processing system may include a multiply-accumulate (MAC) unit to generate output data by performing multiply-accumulate operations on first and second input data in response to a stream of MAC instruction words, where the MAC unit is pipelined to enable it to perform a multiply-accumulate operation in response to each MAC instruction word. The system may also include an instruction generator to generate the stream of MAC instruction words by performing loop expansion on a stream of intermediate instruction words, where one intermediate instruction word may comprise a group of fields to set up the MAC unit to execute in response to the one intermediate instruction word.

Abstract: Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.