Abstract: A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

Abstract: Disclosed is a method and structure for forming a split-gate fin-type field effect transistor (FinFET). The invention produces a split-gate fin-type field effect transistor (FinFET) that has parallel fin structures. Each of the fin structures has a source region at one end, a drain region at the other end, and a channel region in the middle portion. Back gate conductors are positioned between channel regions of alternating pairs of the fin structures and front gate conductors are positioned between channel regions of opposite alternating pairs of the fin structures. Thus, the back gate conductors and the front gate conductors are alternatively inter-digitated between channel regions of the fin structures.

Abstract: A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base structure. A conformal polycrystalline semiconductor layer is then formed on the mandrel and on the base structure, wherein the polycrystalline layer contacts the base structure. The polycrystalline semiconductor layer is then recrystallized so that it has a crystallinity substantially similar to that of the base structure. Thus, a freestanding semiconductor layer is formed with a high degree of control of the thickness and height thereof and maintaining a uniformity of thickness.

Abstract: A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.

Abstract: A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.

Abstract: A drainage bag for receiving bodily waste, such as an ostomy bag, comprises an outer bag of material soluble in cold water,e.g. polyvinyl alcohol, and an inner bag of material insoluble in water at ambient temperature and body temperature but soluble in organic solvent,e.g. 2-oxepanone polymer (polycaprolactone). When the bag (and contents) are to be disposed of, appropriate organic solvent (e.g. benzyl alcohol) is applied to the inner bag. The bag can then be placed in a WC bowl and is flushable after about 1-2 minutes.

Abstract: A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which includes a first fin, and a second-type of FinFET which includes a second fin running parallel to the first fin. The invention also has an insulator fin positioned between the source/drain regions of the first first-type of FinFET and the second-type of FinFET. The insulator fin has approximately the same width dimensions as the first fin and the second fin, such that the spacing between the first-type of FinFET and the second-type of FinFET is approximately equal to the width of one fin. The invention also has a common gate formed over channel regions of the first-type of FinFET and the second-type of FinFET. The gate includes a first impurity doping region adjacent the first-type of FinFET and a second impurity doping region adjacent the second-type of FinFET.

Abstract: Protection circuits and methods of protecting a semiconductor device are provided. According to one aspect, the present invention provides a protection circuit adapted to be coupled to a ground connection, pad and power bus of a semiconductor device, the protection circuit includes electrically coupled first and second transistors adapted to be coupled between a pad and a ground connection, the first and second transistors having a common diffusion region coupling the first transistor with the second transistor in a cascode configuration, the first transistor having a gate adapted to be coupled to a power bus to receive a bias voltage, the power bus being substantially electrically isolated from the pad.

Abstract: Sealed insulating glass units with multiple-pane construction containing an intermediate taut, flexible heat shrunk plastic sheet are made using silicone edge sealant which exhibits a sheet creep of less than 0.018 cm after 500 hours at 71.degree. C. The plastic sheet remains substantially wrinkle free by the use of such silicone edge sealants.

Abstract: The present invention provides a pesticide composition comprising an effective pesticidal amount of 2-cyclopropylamino-4,6,-diamino-s-triazine in the form of a salt, or a mixture of salts formed from lactic acid, acetic acid and sulphuric acid, in a water-based carrier.

Abstract: New microbicidal compositions having improved microbicidal activity comprise a compound of formula I: ##STR1## or an acid addition salt thereof; in which Z is --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, --CH(CH.sub.3)--CH(CH.sub.3)-- or --CH.sub.2 --CH(C.sub.1 -C.sub.10 alkyl)--; and Ar is a phenyl, thienyl, halothienyl or naphthyl group, or phenyl substituted with 1 to 3 halogen, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 alkoxy, cyano or nitro substituents; and a compound having the formula II: ##STR2## in which R is C.sub.1 -C.sub.4 alkyl, R.sup.1 is hydrogen or C.sub.1 -C.sub.4 alkyl, m is 0, 1, 2, 3 or 4 and n is 0, 1, 2, 3 or 4; new salts of (restricted) formula II, a process for their preparation and a method for combatting microbicidal plant diseases using the above mentioned compositions.

Abstract: Aqueous herbicidal concentrates of the normally water insoluble alkanoic acid esters of ioxynil and bromoxynil are prepared by dissolving the esters in an aqueous solution of at least a threefold excess of a salt of herbicidal chlorobenzoic or chlorophenoxyalkanoic acids.