Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Described are systems and techniques directed to optical inspection of moving products (wafers, substrates, films, patterns) that are being transported to or from processing chambers in device manufacturing systems. Implementations include a system that has a first source of light to direct a first light to a first location on a surface of a product. The first light generates, at the first location, a first reflected light. The system further includes a first optical sensor to generate a first data representative of a first reflected light, and a processing device, in communication with the first optical sensor to determine, using the first data, a property of the product.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

Abstract: Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

Abstract: Implementations disclosed describe a system comprising a first optical device to receive an input beam of light, the input beam having a plurality of spectral components of light, and cause the input beam to disperse into a plurality of spectral beams, wherein each of the plurality of spectral beams corresponds to one of the plurality of spectral components and propagates along a spatial path that is different from spatial paths of other spectral beams, and a second optical device to collect a portion of each of the spectral beams, wherein the collected portion depends on the spatial path of the respective spectral beam, and form an output beam of light from the collected portion of each of the spectral beams, wherein a spectral profile of the output beam is different from a spectral profile of the input beam of light.

Abstract: Implementations disclosed describe a system comprising a first optical device to receive an input beam of light, the input beam having a plurality of spectral components of light, and cause the input beam to disperse into a plurality of spectral beams, wherein each of the plurality of spectral beams corresponds to one of the plurality of spectral components and propagates along a spatial path that is different from spatial paths of other spectral beams, and a second optical device to collect a portion of each of the spectral beams, wherein the collected portion depends on the spatial path of the respective spectral beam, and form an output beam of light from the collected portion of each of the spectral beams, wherein a spectral profile of the output beam is different from a spectral profile of the input beam of light.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Abstract: A measurement tool includes a rotation stage supporting an workpiece support, a thickness sensor overlying a workpiece support surface; a translation actuator coupled to the thickness sensor for translation of the thickness sensor relative to the workpiece support surface; and a computer coupled to control the rotation actuator and the translation actuator, and coupled to receive an output of the thickness sensor.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: In one embodiment, a sample is tested by an eddy current sensor at two distances separated by a known incremental distance. In one aspect, at least one of an unknown distance of the sensor from the test sample and the film thickness of the test sample may be determined as a function of a comparison of sensor output levels of a single parameter and the known incremental distance to calibration data. In yet another aspect, the distance between the sensor and the test sample may oscillated to produce an oscillating sensor output signal having an amplitude and mean which may be measured and compared to calibration data to identify at least one of the unknown film thickness of a conductive film on a test sample, and the unknown distance of the test sample from the sensor. Other aspects and features are also described.

Abstract: An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Abstract: In one embodiment, a sample is tested by an eddy current sensor at two distances separated by a known incremental distance. In one aspect, at least one of an unknown distance of the sensor from the test sample and the film thickness of the test sample may be determined as a function of a comparison of sensor output levels of a single parameter and the known incremental distance to calibration data. In yet another aspect, the distance between the sensor and the test sample may oscillated to produce an oscillating sensor output signal having an amplitude and mean which may be measured and compared to calibration data to identify at least one of the unknown film thickness of a conductive film on a test sample, and the unknown distance of the test sample from the sensor. Other aspects and features are also described.

Abstract: An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.

Abstract: An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.

Abstract: In a spectrographic workpiece metrology system having an optical viewing window, the viewing window is calibrated against a reference sample of a known absolute reflectance spectrum to produce a normalized reflectance spectrum of the reference sample, which is combined with the absolute reflectance spectrum to produce a correction factor. Successive production workpieces are measured through the window and calibrated against the viewing window reflectance, and transformed to absolute reflectance spectra using the same correction factor without having to re-load the reference sample.

Abstract: An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.