Abstract: An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.

Abstract: In a spectrographic workpiece metrology system having an optical viewing window, the viewing window is calibrated against a reference sample of a known absolute reflectance spectrum to produce a normalized reflectance spectrum of the reference sample, which is combined with the absolute reflectance spectrum to produce a correction factor. Successive production workpieces are measured through the window and calibrated against the viewing window reflectance, and transformed to absolute reflectance spectra using the same correction factor without having to re-load the reference sample.

Abstract: In a spectrographic workpiece metrology system having an optical viewing window, the viewing window is calibrated against a reference sample of a known absolute reflectance spectrum to produce a normalized reflectance spectrum of the reference sample, which is combined with the absolute reflectance spectrum to produce a correction factor. Successive production workpieces are measured through the window and calibrated against the viewing window reflectance, and transformed to absolute reflectance spectra using the same correction factor without having to re-load the reference sample.

Abstract: Embodiments of the present invention generally relate to systems, apparatuses, and methods used to form solar cell devices using processing modules adapted to perform one or more processes in the formation of the solar cell devices. In one embodiment, the system provides an inline inspection system of solar cell devices within a solar cell production line while collecting and using metrology data to diagnose, tune, or improve production line processes during manufacture of solar cell devices. In one embodiment, the inspection system provides an on-the-fly characterization module positioned downstream from one or more processing tools wherein the characterization module is configured to measure on-the-fly one or more properties of one or more photovoltaic layers formed on a substrate surface and a system controller in communication with the characterization module and the one or more processing tools, where the system controller is configured to analyze information received from the characterization module.

Abstract: In a spectrographic workpiece metrology system having an optical viewing window, the viewing window is calibrated against a reference sample of a known absolute reflectance spectrum to produce a normalized reflectance spectrum of the reference sample, which is combined with the absolute reflectance spectrum to produce a correction factor. Successive production workpieces are measured through the window and calibrated against the viewing window reflectance, and transformed to absolute reflectance spectra using the same correction factor without having to re-load the reference sample.

Abstract: An addressable micromirror array is employed in conjunction with circuit topology navigation software to rapidly wavelength sample selected measurement points in an integrated circuit region.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by oscillating a spot of a beam of electromagnetic radiation.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by use of only one beam of electromagnetic radiation.