Abstract: The present disclosure provides collaborative radiofrequency identification (RFID) readers that employ code division multiple access (CDMA) encoding to simultaneously broadcast to and read responses from tags in an overlapping reading zone with improved data synchronization and read yield rates. In some embodiments, a harmonic backscattering scheme is used to enable the system to have a much higher signal-to-noise ratio (SNR) and sensitivity, while the reader CDMA protocol can be integrated with an initial TDMA polling process or alternative tag CDMA scheme.

Abstract: Near-field coherent sensing (NCS) methods and systems are described herein. The techniques may be used to monitor vital signs is introduced herein. Multiple-input, multiple output near-field techniques may be used to characterize motion. In some embodiments, the methods and systems are used to measure cardiac motion. In some embodiments, the disclosed system is integrated into a seat, such as, for example, a car seat. The system be configured to monitor the vital signs of a seat occupant with multiple sensing points. The sensor can be integrated into the cushion and hence “invisible” to the user.

Abstract: A radio-frequency method for range finding includes modulating a reference signal having an intermediate frequency to a downlink signal having a carrier frequency using a clock signal. The downlink signal is transmitted to a tag using a transceiver. An uplink signal backscattered from the tag is received and demodulated using the clock signal. The uplink signal has a frequency that is a harmonic of the carrier frequency. A distance between the tag and the transceiver is calculated based on a phase of the demodulated uplink signal. A system for range finding includes a transceiver and a processor. The transceiver modulates a reference signal to a downlink signal and transmits the downlink signal. The transceiver receives and demodulates an uplink signal. The processor is configured to receive the demodulated uplink signal and calculate a distance between the tag and the transceiver using a phase of the demodulated uplink signal.

Abstract: The present disclosure provides collaborative radiofrequency identification (RFID) readers that employ code division multiple access (CDMA) encoding to simultaneously broadcast to and read responses from tags in an overlapping reading zone with improved data synchronization and read yield rates. In some embodiments, a harmonic backscattering scheme is used to enable the system to have a much higher signal-to-noise ratio (SNR) and sensitivity, while the reader CDMA protocol can be integrated with an initial TDMA polling process or alternative tag CDMA scheme.

Abstract: A floating gate based sensor apparatus includes at least two separate electrical bias components with respect to a floating gate based sensor surface within the floating gate based sensor apparatus. By including the at least two electrical bias components, the floating gate based sensor apparatus provides enhanced capabilities for biomaterial and non-biomaterial detection and manipulation while using the floating gate based sensor apparatus.

Abstract: The present disclosure may be embodied as methods and/or systems for non-contact measuring of an on-body and/or inside-body motion of an individual. A sensing signal is provided within a near-field coupling range of a motion to be measured. In this way, a measurement signal may be generated as the sensing signal modulated by the motion. The sensing signal may be an ID-modulated signal. In some embodiments, the sensing signal is a backscattered RFID link provided a wireless tag. A downlink signal may be provided to power the wireless tag. The sensing signal may be a harmonic of the downlink signal. The measurement signal is detected. The motion is measured based on the measurement signal. The measurement signal may be detected as far-field radiation after transmission through a source of the motion. The measurement signal may be detected as reflected from a source of the motion as antenna reflection.

Abstract: A floasting gate based sensor apparatus includes at least two separate electrical bias components with respect to a floating gate based sensor surface within the floating gate based sensor apparatus. By including the at least two electrical bias components, the floating gate based sensor apparatus provides enhanced capabilities for biomaterial and non-biomaterial detection and manipulation while using the floating gate based sensor apparatus.

Abstract: A floating gate based sensor apparatus includes at least two separate electrical bias components with respect to a floating gate based sensor surface within the floating gate based sensor apparatus. By including the at least two electrical bias components, the floating gate based sensor apparatus provides enhanced capabilities for biomaterial and non-biomaterial detection and manipulation while using the floating gate based sensor apparatus.

Abstract: Methods and system for providing a security function, such as random number generation, fingerprinting and data hiding, using a Flash memory. The methods and systems do not require carefully design specific circuits, can be implemented in all flash memory device. The fingerprinting methods and systems do not require a long time to generate a read and the data hiding is decoupled from Flash memory content.

Abstract: A floating gate based sensor apparatus includes at least two a separate electrical bias components with respect to a floating gate based sensor surface within the floating gate based sensor apparatus. By including the at least two electrical bias components, the floating gate based sensor apparatus provides enhanced capabilities for biomaterial and non-biomaterial detection and manipulation while using the floating gate based sensor apparatus.

Abstract: Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.

Abstract: Methods and system for providing a security function, such as random number generation, fingerprinting and data hiding, using a Flash memory. The methods and systems do not require carefully design specific circuits, can be implemented in all flash memory device. The fingerprinting methods and systems do not require a long time to generate a read and the data hiding is decoupled from Flash memory content.

Abstract: Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.

Abstract: Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application.

Abstract: Embodiments of tunneling barriers and methods for same can embed molecules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.

Abstract: A method for transmitting signals along an interconnect in a VLSI system comprising receivers is disclosed. The VLSI based systems operate in the high Giga hertz range. The signals are transmitted along the interconnect as a localized wave packet i.e. as a pulse. The interconnect may be either electrically linear or nonlinear in nature.

Abstract: Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application.

Abstract: A method for transmitting signals along an interconnect in a VLSI system comprising receivers is disclosed. The VLSI based systems operate in the high Giga hertz range. The signals are transmitted along the interconnect as a localized wave packet i.e. as a pulse. The interconnect may be either electrically linear or nonlinear in nature.

Abstract: To facilitate high frequency operation, transmission lines for high-speed interconnect applications in CMOS technologies are loaded with patterned permalloy or other ferromagnetic material films. Patterning the permalloy films as a plurality of segments results in control of the domain structures in the permalloy segments such that ferromagnetic resonance (FMR) effects are eliminated and eddy-current effects are reduced, thereby allowing operation of the transmission lines at frequencies of 20 GHz or higher. In addition, the patterned permalloy reduces the magnetic field coupling between two adjacent transmission lines. A novel ferromagnetic thin film characterization method is also employed to measure the microwave permeability of the patterned permalloy films and verify their high frequency operational characteristics.

Abstract: Metal nanocrystal memories are fabricated to include higher density states, stronger coupling with the channel, and better size scalability, than has been available with semiconductor nanocrystal devices. A self-assembled nanocrystal formation process by rapid thermal annealing of ultra thin metal film deposited on top of gate oxide is integrated with NMOSFET to fabricate such devices. Devices with Au, Ag, and Pt nanocrystals working in the F-N tunneling regime, with hot-carrier injection as the programming mechanism, demonstrate retention times up to 106s, and provide 2-bit-per-cell storage capability.