Abstract: An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Abstract: An epoxy resin composition comprising (A) at least one epoxy resin comprising (a) a naphthalene ring-containing epoxy resin having at least one substituted or unsubstituted naphthalene ring in a molecule and having an epoxy equivalent of 175 to 210, (B) a phenolic resin having at least one substituted or unsubstituted naphthalene ring in a molecule, and (C) an inorganic filler, the substituted or unsubstituted naphthalene ring of the epoxy resin (a) being contained in an amount of 45 to 60% by weight in the total amount of the epoxy resin (A) is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Abstract: In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically Zn2SiO4, ZnCrO4, ZnFeO4 or ZnMoO4. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.

Abstract: An epoxy resin composition comprising (A) a mixture of a naphthalene type epoxy resin and an anthracene type epoxy resin, (B) a curing agent in the form of a naphthalene type phenolic resin, and (C) an inorganic filler is best suited for semiconductor encapsulation.

Abstract: An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a phenolic resin curing agent, (C) a copolymer obtained through addition reaction of alkenyl groups on an alkenyl-containing epoxy compound and SiH groups on an organohydrogenpolysiloxane of 20 to 50 silicon atoms, and (D) an inorganic filler is best suited for semiconductor encapsulation because the cured composition has good thermal cycling, anti-warping, reflow resistance, and moisture-proof reliability.

Abstract: An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a rare earth oxide or hydrotalcite compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Abstract: An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Abstract: An epoxy resin composition comprising (A) at least one epoxy resin comprising (a) a naphthalene ring-containing epoxy resin having at least one substituted or unsubstituted naphthalene ring in a molecule and having an epoxy equivalent of 175 to 210, (B) a phenolic resin having at least one substituted or unsubstituted naphthalene ring in a molecule, and (C) an inorganic filler, the substituted or unsubstituted naphthalene ring of the epoxy resin (a) being contained in an amount of 45 to 60% by weight in the total amount of the epoxy resin (A) is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Abstract: A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, (D-i) an organopolysiloxane, (D-ii) an organopolysiloxane cured product, or (D-iii) a block copolymer obtained by reacting an epoxy resin or alkenyl group-bearing epoxy resin with an organohydrogenpolysiloxane, and (E) an inorganic filler. The composition has improved moldability and solder crack resistance while exhibiting high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.

Abstract: In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically Zn2SiO4, ZnCrO4, ZnFeO4 or ZnMoO4. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.

Abstract: A semiconductor encapsulating epoxy resin composition comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, and (D) 300-900 parts by weight per 100 parts by weight of components (A) and (B) combined of an inorganic filler contains nitrogen atoms in an amount of 1.5-20% by weight based on the weight of components (A) and (B) combined. Cured parts of the composition exhibit high-temperature capabilities and flame retardance despite the absence of halogenated epoxy resins and antimony trioxide.

Abstract: A flip-chip type semiconductor device sealed with a light transmissive epoxy resin composition comprising (A) an epoxy resin having the following general formula (i):  wherein n is 0 or a positive number, (B) a curing accelerator, and (C) an amorphous silica-titania co-melt as at least one of inorganic fillers, said composition satisfying the relationship of the following formula (1): [ { 2 ⁢ ( n A 2 + n C 2

Abstract: Epoxy resin compositions comprising (A) an epoxy resin having an epoxy equivalent of at least 185 and possessing a structure in which two benzene rings can be directly conjugated, carbon atoms having an sp2 type atomic orbital accounting for at least 50% of all the carbon atoms, (B) a &bgr;-naphthol type phenolic resin curing agent, (C) a curing accelerator, and (D) an inorganic filler cure into products having satisfactory solder crack resistance on use of lead-free solder and improved flame retardance despite the absence of halogenated epoxy resins and antimony compounds and are thus suited for semiconductor encapsulation.

Abstract: A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, (D-i) an organopolysiloxane, (D-ii) an organopolysiloxane cured product, or (D-iii) a block copolymer obtained by reacting an epoxy resin or alkenyl group-bearing epoxy resin with an organohydrogenpolysiloxane, and (E) an inorganic filler. The composition has improved moldability and solder crack resistance while exhibiting high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.

Abstract: A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, (D-i) an organopolysiloxane, (D-ii) an organopolysiloxane cured product, or (D-iii) a block copolymer obtained by reacting an epoxy resin or alkenyl group-bearing epoxy resin with an organohydrogenpolysiloxane, and (E) an inorganic filler. The composition has improved moldability and solder crack resistance while exhibiting high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.

Abstract: An epoxy resin composition comprising (A) an epoxy resin, (B) a curing accelerator, and (C) an inorganic filler is light transmissive when it satisfies formulae (1) and (2): [{2(nA2+nC2)−(nA+nC)2}/2]½<3.0×10−3  (1) [{2(fA2+fC2)−(fA+fC)2}/2]½<1.0×10−5  (2) wherein nA is the refractive index at T1° C. of the cured unfilled composition, nC is the refractive index at T1° C. of the inorganic filler, fA is a temperature coefficient of the refractive index of the cured unfilled composition, and fC is a temperature coefficient of the refractive index of the inorganic filler. The cured composition has improved heat resistance, humidity resistance and low stress as well as high transparency over a wide temperature range. The composition is suited for the sealing of optical semiconductor devices.

Abstract: A flip-chip type semiconductor device sealed with a light transmissive epoxy resin composition comprising

Abstract: Epoxy resin compositions comprising (A) an epoxy resin having an epoxy equivalent of at least 185 and possessing a structure in which two benzene rings can be directly conjugated, carbon atoms having an sp2 type atomic orbital accounting for at least 50% of all the carbon atoms, (B) a &bgr;-naphthol type phenolic resin curing agent, (C) a curing accelerator, and (D) an inorganic filler cure into products having satisfactory solder crack resistance on use of lead-free solder and improved flame retardance despite the absence of halogenated epoxy resins and antimony compounds and are thus suited for semiconductor encapsulation.

Abstract: Semiconductor encapsulating epoxy resin compositions comprising an epoxy resin, a phenolic resin curing agent, a fire retardant comprising zinc molybdate carried on spherical silica having a mean particle diameter of 0.2-20 &mgr;m and a specific surface of 1-20 m2/g, and an inorganic filler are able to provide cured products having excellent fire retardance. The compositions have good flow and curing properties and excellent reliability and do not pose a hazard to human health or the environment.

Abstract: Semiconductor encapsulating epoxy resin compositions comprising an epoxy resin, a phenolic resin curing agent, a fire retardant comprising zinc molybdate carried on spherical silica having a mean particle diameter of 0.2-20 &mgr;m and a specific surface of 1-20 m2/g, and an inorganic filler are able to provide cured products having excellent fire retardance. The compositions have good flow and curing properties and excellent reliability and do not pose a hazard to human health or the environment.