Abstract: A light-transmissive epoxy resin composition comprising (A) an epoxy resin, (B) a curing accelerator, and (C) an inorganic filler satisfies formula (1):

Abstract: An epoxy resin composition comprising (A) an epoxy resin, (B) a curing accelerator, and (C) an inorganic filler is light transmissive when it satisfies formulae (1) and (2):

Abstract: A semiconductor encapsulating epoxy resin composition comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a molybdenum compound, and (D) 300-900 parts by weight per 100 parts by weight of components (A) and (B) combined of an inorganic filler contains nitrogen atoms in an amount of 1.5-20% by weight based on the weight of components (A) and (B) combined. Cured parts of the composition exhibit high-temperature capabilities and flame retardance despite the absence of halogenated epoxy resins and antimony trioxide.

Abstract: An epoxy resin composition comprising (A) a biphenyl skeleton epoxy resin, (B) a biphenyl skeleton phenolic resin as a curing agent, (C) molybdenum compound, and (D) an inorganic filler is suited for semiconductor encapsulation since it is effectively moldable and cures into a part having improved reflow crack resistance, moisture resistance, and flame retardance. It does not pose a hazard to human health or the environment.

Abstract: A semiconductor encapsulating epoxy resin composition is provided comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a microencapsulated flame retardant comprising a red phosphorus-base core coated with a thermoplastic resin and/or thermosetting resin, (D) a molybdenum compound, and (E) an inorganic filler. The composition and its cured product have moisture-proof reliability and high flame retardance despite the absence of halogenated epoxy resins and antimony oxide.

Abstract: An epoxy resin composition contains (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a curing catalyst, and (D) an inorganic filler. The catalyst is a quaternary phosphorus compound or a quaternary phosphorus compound which has been mixed and reacted with a phenolic resin having at least two hydroxyl groups. The composition is effectively flowable, moldable and curable and thus suitable for semiconductor encapsulation.

Abstract: By removing a fraction of fine particles having a particle size of less than 2 &mgr;m from starting inorganic filler particles having a mean particle size of 10-50 mm and adding thereto particles having a mean particle size of 0.1-2 &mgr;m and a specific surface area of 3-10 m2/g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 &mgr;m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.

Abstract: A flame retardant epoxy resin composition suitable for semiconductor encapsulation contains (A) a crystalline epoxy resin whose 30 wt % m-cresol solution has a viscosity of lower than 80 centipoise at 25° C., (B) a curing agent having at least two phenolic hydroxyl groups, and (C) silica. The composition optionally contains (D) an organopolysiloxane, (E) an organic phosphine oxide, (F) an amide group-containing release agent, and/or (G) a silane coupling agent. The cured composition achieves flame retardance rating UL-94 V-0 without a need for flame retardants and remains stable at high temperature.

Abstract: An epoxy resin composition comprising an epoxy resin, a curing agent, an inorganic filler, and a curing accelerator is suited for semiconductor encapsulation. A specific organic phosphorus compound is used as the curing accelerator. The composition is smoothly flowing, stable during storage, effectively curable and mold releasable and can be molded and cured into products free from wire flow and voids.

Abstract: An epoxy resin composition comprising (A) a biphenyl skeleton-bearing epoxy resin, (B) a biphenyl skeleton-bearing phenolic resin as a curing agent, (C) an organosiloxane containing phenyl and organooxy groups, and (D) an inorganic filler is suited for semiconductor encapsulation since it is effectively moldable and cures into a part having improved reflow crack resistance, moisture resistance, and flame retardance. It does not pose a hazard to human health or the environment.

Abstract: An epoxy resin composition comprising a crystalline epoxy resin, a phenolic resin, and an inorganic filler is improved in moldability by previously reacting phenolic hydroxyl groups on the phenolic resin with epoxy groups on the crystalline epoxy resin to form a reaction product and blending the reaction product in the composition. The composition is moldable over semiconductor devices without voids and wire flow. The encapsulated semiconductor devices thus remain reliable.

Abstract: An epoxy resin composition comprising an epoxy resin, a curing agent, and an inorganic filler has a melt viscosity of at most 150 poise at 175.degree. C. The inorganic filler has a BET specific surface area of 1.5-6 m.sup.2 /g and is such that when a 75/25 mixture of the inorganic filler and a bisphenol F type liquid epoxy resin is measured for viscosity at shear rates of 0.6/sec. and 10/sec. at a temperature of 25.+-.0.05.degree. C. by an E type viscometer, the ratio of the viscosity at 0.6/sec. to the viscosity at 10/sec. is at least 3.5/1. The amount of the inorganic filler loaded is 80-90% by weight of the composition. The composition is suitable for the encapsulation of matrix frames.

Abstract: The evaluating method includes: dipping a mirror-polished silicon wafer in a dilute hydrofluoric acid; washing the surface of the silicon wafer; subjecting the surface-washed silicon wafer to a heat treatment in an oxygen atmosphere to form a thermal oxidation film; forming a predetermined number of polycrystalline silicon electrodes having a predetermined area on the thermal oxidation film; applying a voltage to each electrode between the predetermined number of polycrystalline silicon electrodes and the silicon wafer; and judging the quality of the mirror-polishing process of the silicon wafers in accordance with the breakdown electric field intensity of the leakage current obtained by measuring the oxide film insulation.

Abstract: In an epoxy resin composition comprising an epoxy resin, a curing agent, and 80-90 wt % of a particulate inorganic filler, fine particles having a particle size of less than 3 .mu.m account for 10-40 wt % of the inorganic filler, and the inorganic filler has a specific surface area of less than 2.5 m.sup.2 /g as measured by a nitrogen adsorption BET method. The inorganic filler satisfies that when a blend of a bisphenol F type liquid epoxy resin having a viscosity of 30-45 poises at 25.degree. C. as measured by Gardner-Holdt method with 75 wt % of the inorganic filler is measured for viscosity at 25.degree. C. by means of an E type viscometer, the viscosity at a shear rate of 0.6 s.sub.-1 is less than 50,000 poises and the ratio of the viscosity at a shear rate of 0.6 s.sup.-1 to the viscosity at a share rate of 10 s.sup.-1 is less than 2.5/1. The epoxy resin composition has a low melt viscosity enough to mold on semiconductor devices without die pad and wire deformation.

Abstract: By removing a fraction of fine particles having a particle size of less than 2 .mu.m from starting inorganic filler particles having a mean particle size of 10-50 .mu.m and adding thereto particles having a mean particle size of 0.1-2 .mu.m and a specific surface area of 3-10 m.sup.2 /g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 .mu.m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.

Abstract: A process for precisely and efficiently manufacturing a semiconductor wafer is provided, which can prevent contamination by metals inside silicon crystals and remove the factors that degrade the GOI produced during the wafer manufacturing steps. A sliced and chamfered semiconductor wafer is subjected to lapping. The lapped semiconductor wafer is then etched, and thus the working strains produced by lapping is removed. The two sides of the etched semiconductor wafer are then primary polished with a dual-surface polishing machine. The primary polished semiconductor wafer is etched with an aqueous solution of 1% NaOH solution. The weak alkali etched semiconductor wafer is then mirror processed by a finish polishing. The finish polished semiconductor wafer is washed with an SC-1 solution.

Abstract: A MOS capacitor in which an insulating layer of thermal oxide film is disposed between the electrode 2 and the silicon wafer 1 is formed. While a light beam of an energy larger than 1.1 eV is irradiated on the electrode 2 and its periphery, electrons inject from the electrode 2 side (voltage is applied from the silicon wafer 1 side). The injected electrons are activated by the light irradiation. For both p-type or n-type semiconductor, the dielectric breakdown electric field strength can be precisely measured according to the degree of processing defects. The evaluation method is particularly effective for the n-type semiconductor wafer, which was difficult to evaluate by the prior art.

Abstract: An epoxy resin composition comprising (A) 20-80 parts by weight of an epoxy resin, (B) 20-80 parts by weight of a curing agent, (C) 0.1-50 parts by weight of a phosphorus-containing flame retardant, and (D) 200-1,200 parts by weight of an inorganic filler cures into products having improved high-temperature exposure resistance, flame retardancy, and reflow cracking resistance. The composition eliminates blending of antimony trioxide and brominated compounds and is useful in encapsulating semiconductor devices for imparting high-temperature reliability.

Abstract: High transparency silica-titania glass beads are characterized by a linear transmittance of at least 70% as measured at a wavelength of 900 nm to 600 nm by a specific measurement method. Such beads are prepared by hydrolyzing and polycondensing a silicon alkoxide and a titanium alkoxide to form a silica-titania sol, converting the sol into a dry gel, and then grinding the gel followed by heating or heating the gel followed by grinding. A light transmisson epoxy resin composition comprising a curable epoxy resin, a curing agent, and the high tranparency silica-titania glass beads has crack resistance and high transparency in cured state. It is useful in encapsulating optical semiconductor devices.