Abstract: A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Abstract: A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Abstract: Provided is a power semiconductor device including: a circuit body in which a conductor plate and a semiconductor element mounted on the conductor plate are sealed with a sealing resin; a cooler disposed opposite to at least one surface of the circuit body; and an insulating member disposed between the circuit body and the cooler, the insulating member including: an insulating sheet bonded to the cooler; a conductor layer bonded to a surface of the insulating sheet, the surface facing the circuit body; and electrically insulating heat dissipation grease filled between the circuit body and the cooler, and formed covering the insulating sheet and the conductor layer.

Abstract: A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.

Abstract: An electric circuit body including a power semiconductor element joined to one surface of a conductor plate; a sheet member including an insulating layer joined to the other surface of the conductor plate; a sealing member that integrally seals the sheet member, the conductor plate, and the power semiconductor element in a state where a surface of the sheet member opposite to a surface joined to the conductor plate is exposed; a cooling member that cools heat of the power semiconductor element; and a heat conduction member provided between the opposite surface of the sheet member and the cooling member, where the heat conduction member is provided over a first projection region facing the conductor plate and a second projection region facing the sealing member, and a thickness of the heat conduction member is thicker in the second projection region than in the first projection region.

Abstract: An electrical circuit body includes a power semiconductor element joined to one face of a conductor plate, a sheet member including an insulating layer joined to the other face of the conductor plate, a sealing member integrally sealing the sheet member, the conductor plate, and the power semiconductor element in a state where a face, of the sheet member, opposite to a face joined to the conductor plate is exposed, and a cooling member bonded to the opposite face of the sheet member via a heat conduction member, wherein the sealing member has a recess along an outer edge of the sheet member on a surface where the sheet member is exposed, the recess being located outside the sheet member.

Abstract: Provided is a compact and highly reliable power semiconductor device that prevents partial discharge originating from voids generated by the entering of water vapor from the exterior of the semiconductor device through a sealing resin or voids generated between a main terminal and the sealing resin when the main terminal is heated. The power semiconductor device comprises an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulation material for sealing the semiconductor element. The power semiconductor device further includes a plate-shaped terminal for electrically connecting the semiconductor element and an external equipment, and an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a hardness greater than that of the first insulating material.

Abstract: Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100.

Abstract: An object of the present invention is to provide a power conversion device configured to attain suppression of heat concentration and miniaturization of the device. The power conversion device 40 includes a power module 17 for converting dc power into ac power, a first circuit substrate (power circuit substrate) 16 including a capacitor 31 for smoothing the dc power, and a casing 20 for storing the power module 17 and the first circuit substrate 16. Either the first circuit substrate 16 or the power module 17 is disposed on an inner surface 20bb of a side wall 20b having an outer wall surface 20ba of the casing 20, and the other is disposed on a predetermined inner wall surface 20a of the casing 20 to form an angle with the inner surface 20bb.

Abstract: The present invention provides an in-vehicle electronic control device which further improves heat dissipation by forming a protrusion extending toward an electronic component on an inner surface of a cover portion formed of a highly thermally conductive resin in consideration of orientation of a filling material contained in the highly thermally conductive resin. An in-vehicle electronic control device of the present invention includes: a circuit board on which an electronic component is mounted; a base portion in which the circuit board is installed; and a cover portion with which the circuit board is covered together with the base portion, which is formed of a resin containing a filling material, and which has a protrusion protruding toward the electronic component, in which the protrusion is formed of a resin containing a filling material and a width of the protrusion is smaller than a width of the electronic component.

Abstract: A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layer 5 abuts on a heat dissipation surface 4a of a circuit body 100, and a heat dissipation member 7 abuts on the outside of the thermally conductive layer 5, which is a side of the heat dissipation surface 4a of the circuit body 100. A fixing member 8 abuts on a side of the circuit body 100 opposite to the heat dissipation surface 4a. A connection member 9 is penetrated at the respective end portions of the heat dissipation member 7 and the fixing member 8. FIG. 3 illustrates a state before a bolt and a nut of the connection member 9 are tightened. The heat dissipation member 7 holds a curved shape such that the central portion of the heat dissipation member 7 protrudes toward the circuit body 100.

Abstract: A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Abstract: A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 ?m capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 ?m interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

Abstract: A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Abstract: A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.

Abstract: An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.

Abstract: An object of the invention is to provide a power converter that can be reduced in size. To achieve this, a power converter according to the invention includes: water passages arranged radially from an assumed central axis, each being trapezoid-shaped in cross section; and power modules placed between the water passages such that each of the power modules is sandwiched from both surfaces thereof by the water passages. Each of the power modules has an output terminal and positive and negative terminals on an end face located in a centrifugal direction side with respect to the assumed central axis. Any of the power modules and an adjacent one of the power modules are set in a front-back inverted manner.

Abstract: An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor module 300 and a flow channel formation body 1000 on which the power semiconductor module 300 is disposed. The power semiconductor module 300 has a high thermal conductor 920 which is disposed at a position between a semiconductor chip and the flow channel formation body 1000 and a sealing material that seals a power semiconductor element and the high thermal conductor 920. The high thermal conductor 920 has a fin protruding to the flow channel formation body 1000 at the side of the flow channel formation body 1000 and a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

Abstract: An object of the invention is to manufacture a semiconductor module small. A metal wire (212) connecting a control electrode (101) and a control terminal (21) rises to form a first angle (?1) from the control electrode (101) toward a first conductive portion (202), gradually goes in substantially parallel to the first conductive portion (202) as the metal wire approaches the first conductive portion (202), and is connected to the control terminal (21) to form a second angle (?2) smaller than the first angle (?1).

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.