Abstract: An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layer 700 is provided between a power semiconductor module 302 and a heat dissipation portion 307B. The power semiconductor module 302 includes a resin sealer 348, which covers a circumferential side surface of a conductor plate 315, and a plurality of recesses 348D are provided in the resin sealer 348. The insulation layer 700 is formed of a spray coated film 710, an insulation film 720, and a resin layer 730, and the spray coated film 710 is formed on the surface of the resin sealer 348 including recesses 348D to form a seamless flat surface. The planar size of each of the recesses 348D is greater than the planar size of each flat portion 711, which forms the spray coated film 710.

Abstract: A semiconductor device includes an IGBT as a vertical semiconductor element provided between first, and second lead frames, in pairs, the first, and second lead frames being opposed to each other, first and second sintered-metal bonding layers provided on first and second bonding surfaces of the IGBT, in pairs, respectively, a through-hole opened in the second lead frame, and a heat-release member having a surface on one side thereof, bonded to a second sintered-metal bonding layer of the second bonding surface while a side (lateral face) of a surface of the heat-release member, on the other side thereof, being fitted into the through-hole. A solder layer is formed in a gap between an outer-side wall of the side of the surface of the heat-release member, on the other side thereof, and an inner-side wall of the through-hole.

Abstract: A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes.

Abstract: The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles, (B) silver oxide, and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

Abstract: It is an object of this invention to provide a bonding material capable of realizing bonding by metallic bonding at a bonding interface at a lower temperature compared to a bonding material using a metal particle having an average particle diameter of not more than 100 nm and a bonding method. There is provided a bonding material including a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of 1 nm to 50 ?m and a reducing agent composed of an organic substance, wherein the content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A semiconductor module includes a case including a receiving space that is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween. The wall portion includes a heat-dissipation portions and a support wall that supports the heat-dissipation portions at the frame portion, and the wall portion includes a heat-dissipation portion and a support wall that supports the heat-dissipation portion at the frame portion. The heat-dissipation portions provided at the wall portion are separately provided by being disposed to face a plurality of semiconductor device blocks respectively. A plurality of separate heat-dissipation portions is surrounded by the support wall, the support wall is deformed to recessed from the frame portion through the separate heat-dissipation portions inside the case such that a plurality of insulating sheets is closely joined to a plurality of lead frames and the plurality of heat-dissipation portions.

Abstract: A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

Abstract: A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element.

Abstract: A semiconductor device includes an IGBT as a vertical semiconductor element provided between first, and second lead frames, in pairs, the first, and second lead frames being opposed to each other, first and second sintered-metal bonding layers provided on first and second bonding surfaces of the IGBT, in pairs, respectively, a through-hole opened in the second lead frame, and a heat-release member having a surface on one side thereof, bonded to a second sintered-metal bonding layer of the second bonding surface while a side (lateral face) of a surface of the heat-release member, on the other side thereof, being fitted into the through-hole. A solder layer is formed in a gap between an outer-side wall of the side of the surface of the heat-release member, on the other side thereof, and an inner-side wall of the through-hole.

Abstract: The present invention aims at providing a power module and a lead frame for the power module which can enhance adhesion between a heat sink and an insulating resin sheet while maintaining heat radiation properties. The power module includes: the lead frame including a conductor plate formed from Cu or a Cu alloy, and an Al film formed at least on the other side, opposite to one side on which to mount a semiconductor device, of the conductor plate; the semiconductor device mounted on the one side of the conductor plate; a sealing resin which seals at least the semiconductor device and the conductor plate; and an insulating resin sheet adhered to the conductor plate through the Al film therebetween.

Abstract: The present invention is directed to enhancing the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. In the semiconductor device, a semiconductor element and an Al electrode are connected to each other with a bonding layer made of Ag or Cu interposed therebetween, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including a metal oxide particle with an average diameter of 1 nm to 50 ?m, an acetic acid- or formic acid-based compound, and a reducing agent made of an organic material.

Abstract: A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes.

Abstract: There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 ?m as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 ?m and the silver oxide particles.

Abstract: When silver oxide is reduced to silver, a large number of cores of metallic silver are formed inside the silver oxide. Then, the silver oxide is reduced in a manner of being hollowed out while its original outer configuration is being maintained. As a result, the curvature of the silver generated becomes larger. The utilization of this microscopic-particle implementation mechanism allows accomplishment of the bonding even if the silver oxide is supplied not in a particle-like configuration, but in a closely-packed layer-like configuration. In the present invention, there is provided an electronic member including an electrode for inputting/outputting an electrical signal, or a connection terminal for establishing a connection with the electrical signal, wherein the uppermost surface of the electrode or the connection terminal is a silver-oxide layer.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 ?m and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element.