Abstract: A solar cell comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode layer, an n-side electrode; and a ZnO transparent electrode layer. The n-side electrode layer consists of AgxAu1-x, and x represents a value of not less than 0.1 and not more than 0.5. The ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles and each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer. The cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.

Abstract: An active grille shutter controls opening and closing of a variable duct device which uses movable louvers to open and close an opening provided at the front end of a vehicle to introduce moving air. The active grille shutter includes: thermal load state detection units each configured to detect a thermal load state of the vehicle; and an opening and closing control unit configured to set the variable duct device in a closed state in a normal condition, and to set the variable duct device in an open state when it is determined that the thermal load state of the vehicle is a predetermined high thermal load state.

Abstract: A base panel member 22 is provided with openings 24. A back panel member 26 having projections 28 that can be inserted into the openings 24. Springs 38 bias the projections 28 against the openings 24. Shape-memory members 40 are disposed in the vicinity of the springs 38. The projections 28 are inserted into the openings 24 by a biasing force of the springs 38, so that airflow through the openings 24 is prohibited. The shape-memory members 40 change shape according to temperature changes, and produce a force against the biasing force. This allows the projections 28 to be separated from the openings 24, creating an airflow state in which the air can pass through the openings 24. A design is formed by combining the base panel member 22 and the projections 28, while the projections 28 are inserted into the openings 24.

Abstract: The purpose of the present invention is to provide an ink jet head capable of ejecting an exact amount of ink, an angular velocity sensor capable of measuring an exact angular velocity, and a piezoelectric generating element capable of generating an electric power due to positive piezoelectric effect, even when the applied electric field of 40 kV/cm or more is applied. The piezoelectric film used for the present invention comprises a piezoelectric layer and first and second electrodes which sandwich the piezoelectric layer therebetween, the first electrode comprises a (001) orientation, the piezoelectric layer is composed of (1-z)(NaxBiy)TiO0.5x+1.5y+2-zBaTiO3 having a (001) orientation, x is not less than 0.30 and not more than 0.46, y is not less than 0.51 and not more than 0.62, and z is not less than 0.07 and not more than 0.09.

Abstract: A shock absorber assembly includes a shock absorber, a utility part, and a flexible member. The shock absorber is provided to a vehicular interior part that is mounted on a compartment inner side of a body panel, and the shock absorber includes a mounting portion that is mounted to a compartment outer side surface of the vehicular interior part. The utility part is provided to the vehicular interior part. The flexible member covers a peripheral surface of the shock absorber, and a part of the flexible member is held by the vehicular interior part and the utility part to support and mount the shock absorber to the vehicular interior part.

Abstract: A solar cell element comprising a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a VxZn1-x layer. The p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer. The p-type group III-group V compound semiconductor layer, the n-type group III-group V compound semiconductor layer, the n-side group III-group V compound electrode layer, and the VxZn1-x layer are stacked in this order. The VxZn1-x layer is in contact with the n-side group III-group V compound electrode layer; x represents a value of not less than 0.3 and not more than 0.99; and the VxZn1-x layer has a thickness of not less than 1 nanometer and not more than 5 nanometers.

Abstract: A solar cell comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode layer, an n-side electrode; and a ZnO transparent electrode layer. The n-side electrode layer consists of AgxAu1-x, and x represents a value of not less than 0.1 and not more than 0.5. The ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles and each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer. The cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.

Abstract: In order to provide a non-lead piezoelectric film having high crystalline orientation, low dielectric loss, high polarization-disappear temperature, and high piezoelectric constant, the present invention is a piezoelectric film comprising: a NaxM1-x layer 13 having a (001) orientation only; and a (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer 15 having a (001) orientation only. The (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer 15 is formed on the NaxM1-x layer 13. M represents Pt, Ir, or PtIr. Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5. x represents a value of not less than 0.002 and not more than 0.02. ? represents a value of not less than 0.20 and not more than 0.50.

Abstract: Provided is an NBT-BT lead-free piezoelectric film having a high crystalline orientation and a high piezoelectric constant. The present invention is a piezoelectric film comprising a NaxM1-x layer and a (Bi, Na)TiO3—BaTiO3 layer. The (Bi, Na) TiO3—BaTiO3 layer is formed on the NaxM1-x layer, where M represents Pt, Ir, or PtIr and x represents a value of not less than 0.002 and not more than 0.02. Both of the NaxM1-x layer and the (Bi, Na) TiO3—BaTiO3 layer have a (001) orientation only, a (110) orientation only, or a (111) orientation only.

Abstract: The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a NaxLa1-x+yNi1-yO3-x layer having only an (001) orientation and a (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer having only an (001) orientation. The (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer is formed on the NaxLa1-x+yNi1-yO3-x layer. The character of Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5 The character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of ? represents a value of not less than 0.20 and not more than 0.50.

Abstract: Provided is a novel actuator and a method for driving the same. The present invention is an actuator comprising a first laminate comprising a first (Bi, Na, Ba) TiO3 layer between first and second electrode layers, a second laminate comprising a second (Bi, Na, Ba) TiO3 layer between third and fourth electrode layers, and a tilt part provided between the first and second laminates. Both of the first and second (Bi, Na, Ba) TiO3 layers are preferentially oriented in a [011] crystalline axis direction. Voltages V5a, V9a, V5b, and V9b which satisfy Requirement A: V5a>V9a and V5b<V9b or Requirement B: V5a<V9a and V5b>V9b are applied to the first-fourth electrode layers so as to tilt the tilt part. One of the first edge and the second edge is moved in the [011] crystalline axis direction and the other is moved in the reverse direction thereof.

Abstract: The purpose of the present invention is to provide a BNT-BT piezoelectric film having a higher crystalline orientation, a higher piezoelectric constant, and a higher ferroelectric property. The present invention is directed to a piezoelectric film comprising a first electrode having only a (110) orientation; a (NaxBi0.5)TiO0.5x+2.75—BaTiO layer having only a (110) orientation, a (Bi,Na)TiO3—BaTiO3 layer having only a (110) orientation, and a second electrode, wherein a value of x is not less than 0.29 and not more than 0.40, and the first electrode, the (NaxBi0.5)TiO0.5x+2.75—BaTiO3 layer, the (Bi,Na)TiO3—BaTiO3 layer, and the second electrode are laminated in this order.

Abstract: The purpose of the present invention is to provide an angular velocity sensor capable of measuring an exact angular velocity, an ink jet head capable of producing an exact amount of ink, and a piezoelectric generating element capable of generating electric power due to positive piezoelectric effect. In the present invention, a piezoelectric film comprising a first electrode, a piezoelectric layer, and a second electrode is used. The first electrode comprises an electrode layer having a (001) orientation. The piezoelectric layer comprises a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer (0.30?x?0.46 and 0.51?y?0.62) having a (001) orientation.

Abstract: The present invention provides a piezoelectric thin film comprising an electrode film with a (001) orientation, a (NaxBi0.5)TiO0.5x+2.75—BaTiO3 film with a (001) orientation (x represents not less than 0.29 and not more than 0.4) and a (Na,Bi)TiO3—BaTiO3 piezoelectric layer, the electrode film, the (NaxBi0.5)TiO0.5x+2.75—BaTiO3 film, and the (Na,Bi)TiO3—BaTiO3 piezoelectric layer being laminated in this order. The lead-free piezoelectric thin film of the present invention has low dielectric loss and high piezoelectric performance.

Abstract: A fixing structure for a vehicle interior material in accordance with the present invention includes: a first interior base material including a first end portion; a second interior base material including a second end portion disposed adjacent to the first end portion; an ornamental member disposed along an axis defined by the first end portion and the second end portion; and a plurality of joints that indirectly fix the first end portion and the second end portion via the ornamental member.

Abstract: The purpose of the present invention is to provide an angular velocity sensor capable of measuring an exact angular velocity, an ink jet head capable of producing an exact amount of ink, and a piezoelectric generating element capable of generating electric power due to positive piezoelectric effect. In the present invention, a piezoelectric film comprising a first electrode, a piezoelectric layer, and a second electrode is used. The first electrode comprises an electrode layer having a (001) orientation. The piezoelectric layer comprises a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer (0.30?x?0.46 and 0.51?y?0.62) having a (001) orientation.

Abstract: It is an object of the present invention to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film. The present invention is directed to a piezoelectric film comprising a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer with a (110) orientation, where 0.30?x?0. 46 and 0.51?y?0.62.

Abstract: A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

Abstract: The purpose of the present invention is to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film. The present invention is directed to a piezoelectric film comprising a NaxLa1-xNiO3-x layer with a (001) orientation and a (Na,Bi)TiO3—BaTiO3 layer with a (001) orientation, wherein x is not less than 0.01 and not more than 0.1, and the NaxLa1-xNiO3-x layer (0.01?x?0.1) and the (Na,Bi)TiO3—BaTiO3 layer are laminated.

Abstract: It is an object of the present invention to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film. The present invention is directed to a piezoelectric film comprising a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer with a (111) orientation, where 0.30?x?0.46 and 0.51?y?0.62.