Abstract: An antenna device includes a first antenna element made of a conductive metallic plate and formed in a shape of a meander; a second antenna element made of another conductive metallic plate and formed in another shape of a meander; and a sealing material which is made of a high-dielectric material and is configured to seal the first and second antenna elements by the sealing material, wherein the first antenna element is arranged in parallel with the second antenna element, and wherein the first and second antenna elements are embedded inside the sealing material by insert molding.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: A tire condition monitoring system, having antennas attached onto each of both right and left side ends of a vehicle windshield, the antennas being connected to a monitoring unit installed near a driver's seat, by which installation on the monitoring unit side can be easily achieved. This enables positive reception of electric waves transmitted from the sensor device by either of the antennas of the right and left side portions of the windshield, thus permitting the monitoring unit to achieve a desired high receiving probability. Accordingly, the tire condition monitoring system provides easy installation without need of attaching any receiving antenna of the monitoring unit at a position adaptable to the sensor device of each tire, as well as attainment of a desired receiving probability at the monitoring unit.

Abstract: According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power having a frequency not lower than 50 MHz to the upper electrode, a second high frequency power source for applying a high frequency power having a frequency not lower than 2 MHz and lower than the frequency of the first high frequency power to the upper and lower electrodes. The frequency of the high frequency power applied by the second high frequency source to the upper electrode is equal to that of the high frequency power applied by the second high frequency source to the lower electrode, and the high frequency power applied by the second high frequency source to the upper electrode has a reverse phase relative to the high frequency power applied by the second high frequency source to the lower electrode.

Abstract: According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power to the upper electrode, a second high frequency power source for applying a second high frequency power having a frequency lower than the frequency of the first high frequency power to the lower electrode. A third high frequency power source for superposing a third high frequency power having a frequency lower than that of the first high frequency power and higher than that of the second high frequency power on the first high frequency power. A phase controller for adjusting the phase difference between the second high frequency power and the third high frequency power.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Abstract: A vacuum treatment device, comprising a vacuum treatment chamber (1) etching a semiconductor wafer (W) as a body to be treated and a preliminary vacuum chamber (2) communicating with the vacuum treatment chamber (1), wherein a transfer arm (5) and first and second buffers (6, 7) for temporarily supporting the wafer (W) are installed in the preliminary vacuum chamber (2), the transfer arm (5) is provided with a flexible arm part (5a) and a support part (16) supporting the wafer (W), the arm part (5a) is extended and retracted by the rotations of a drive side swing arm (14) and a driven side swing arm (15) forming the arm (5a) so as to move the support part (16) straight forward and backward while maintaining it in its attitude, and the first and second buffers (6, 7) are disposed on the motion route of the support part (16) of the transfer arm (5).

Abstract: According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power having a frequency not lower than 50 MHz to the upper electrode, a second high frequency power source for applying a high frequency power having a frequency not lower than 2 MHz and lower than the frequency of the first high frequency power to the upper and lower electrodes. The frequency of the high frequency power applied by the second high frequency source to the upper electrode is equal to that of the high frequency power applied by the second high frequency source to the lower electrode, and the high frequency power applied by the second high frequency source to the upper electrode has a reverse phase relative to the high frequency power applied by the second high frequency source to the lower electrode.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.