Abstract: A manufacturing method of a group III-V compound semiconductor device, the method includes: a first process in which a group V material gas and an impurity material gas are supplied to a reacting furnace which is set at a first temperature of a range from 400° C. to 500° C. and a first pressure of a range from 100 hPa to 700 hPa, and impurities are doped in an undoped group III-V compound semiconductor layer, and a second process in which the supply of the impurity material gas is stopped, a temperature of the reacting furnace is raised to a second temperature which is higher than the first temperature, a pressure of the reacting furnace is set lower than a pressure of the first pressure, a supply of an etching gas is initiated and the supply of the group V material gas is continued.

Abstract: In an engine having fuel supply means for supplying fuel containing gasoline to a combustion chamber and ignition means for igniting an air-fuel mixture, if knocking occurs when ignition is performed at a reference ignition timing set on a retarded side of MBT that is an ignition timing at which the engine torque is maximized in a high-load region in which the engine load is larger than a predetermined load, ignition advance control that causes the ignition means to perform ignition at a timing on an advanced side of the reference ignition timing is performed.

Abstract: An engine control method includes: a first fuel supply step of supplying fuel into the combustion chamber using an injector when a spark plug makes flame in the combustion chamber so that an air-fuel mixture is generated at least around the spark plug, the air-fuel mixture having an air-fuel mass ratio A/F or a gas-fuel mass ratio G/F, in which gas includes air, higher than a stoichiometric air-fuel ratio; after the first fuel supply step, an ignition step of making the flame in the combustion chamber in the compression stroke using the spark plug; and after the ignition step, a second fuel supply step of supplying the fuel into the combustion chamber in the compression stroke using the injector to increase a fuel concentration of the air-fuel mixture in the combustion chamber.

Abstract: An optical semiconductor device is provided with: a mesa in which a first conductivity type cladding layer, an active layer, and a second conductivity type first cladding layer having a second conductivity type are sequentially laminated on a surface of a first conductivity type substrate; a buried layer that buries both sides of the mesa with a top of the mesa being exposed; and a second conductivity type second cladding layer that buries the buried layer and the top of the mesa exposed from the buried layer, wherein the buried layer includes a layer doped with a semi-insulating material, and a boundary between the second conductivity type first cladding layer and the buried layer is inclined so that a width of the second conductivity-type first cladding layer becomes narrower toward the top of the mesa.

Abstract: In an engine having fuel supply means for supplying fuel containing gasoline to a combustion chamber and ignition means for igniting an air-fuel mixture, if knocking occurs when ignition is performed at a reference ignition timing set on a retarded side of MBT that is an ignition timing at which the engine torque is maximized in a high-load region in which the engine load is larger than a predetermined load, ignition advance control that causes the ignition means to perform ignition at a timing on an advanced side of the reference ignition timing is performed.

Abstract: A reproduced data output apparatus includes: a reproduced data receiver section to receive a reproduced data of a content from an external instrument having a reproduction function of the content; a report determiner section to determine whether an operation status report signal indicating that a status of a present operation of the external instrument is a status of a different operation is reported from the external instrument, in response to that an occurrence of an event is identified during a status of a first operation being identified as a status of a present operation of the external instrument; and a command transmission controller section to transmit a command that requires a re-start of the first operation to the external instrument, in response to that the operation status report signal is determined to be reported from the external instrument.

Abstract: A reproduced data output apparatus includes: a reproduced data receiver section to receive a reproduced data of a content from an external instrument having a reproduction function of the content; a report determiner section to determine whether an operation status report signal indicating that a status of a present operation of the external instrument is a status of a different operation is reported from the external instrument, in response to that an occurrence of an event is identified during a status of a first operation being identified as a status of a present operation of the external instrument; and a command transmission controller section to transmit a command that requires a re-start of the first operation to the external instrument, in response to that the operation status report signal is determined to be reported from the external instrument.

Abstract: The engine control method includes a fuel supply step and an ignition step. In the fuel supply step, the injector supplies fuel into a combustion chamber. In the ignition step, an spark plug arranged in the combustion chamber makes a flame after the supply of the fuel into the combustion chamber and at a timing when a flow strength in the combustion chamber is greater than a predetermined value in a compression stroke during or before a post-mid stage where the compression stroke is divided into four stages of a pre-stage, a pre-mid stage, a post-mid stage, and a post-stage.

Abstract: The engine control method includes a fuel supply step and an ignition step. In the fuel supply step, the injector supplies fuel into a combustion chamber. In the ignition step, an spark plug arranged in the combustion chamber makes a flame after the supply of the fuel into the combustion chamber and at a timing when a flow strength in the combustion chamber is greater than a predetermined value in a compression stroke during or before a post-mid stage where the compression stroke is divided into four stages of a pre-stage, a pre-mid stage, a post-mid stage, and a post-stage.

Abstract: An engine control method includes: a first fuel supply step of supplying fuel into the combustion chamber using an injector when a spark plug makes flame in the combustion chamber so that an air-fuel mixture is generated at least around the spark plug, the air-fuel mixture having an air-fuel mass ratio A/F or a gas-fuel mass ratio G/F, in which gas includes air, higher than a stoichiometric air-fuel ratio; after the first fuel supply step, an ignition step of making the flame in the combustion chamber in the compression stroke using the spark plug; and after the ignition step, a second fuel supply step of supplying the fuel into the combustion chamber in the compression stroke using the injector to increase a fuel concentration of the air-fuel mixture in the combustion chamber.

Abstract: An upper layer (4,5) made of non-doped III-V compound semiconductor is formed on a lower layer (3) made of non-doped III-V compound semiconductor. Impurity source gas is fed through vapor phase diffusion using an organometallic vapor-phase epitaxy device to add an impurity to the upper layer (4,5). The vapor phase diffusion is continued with the feed of the impurity source gas stopped or with a feed amount of the impurity source gas lowered.

Abstract: A manufacturing method of a group III-V compound semiconductor device, the method includes: a first process in which a group V material gas and an impurity material gas are supplied to a reacting furnace which is set at a first temperature of a range from 400° C. to 500° C. and a first pressure of a range from 100 hPa to 700 hPa, and impurities are doped in an undoped group III-V compound semiconductor layer, and a second process in which the supply of the impurity material gas is stopped, a temperature of the reacting furnace is raised to a second temperature which is higher than the first temperature, a pressure of the reacting furnace is set lower than a pressure of the first pressure, a supply of an etching gas is initiated and the supply of the group V material gas is continued.

Abstract: An upper layer (4,5) made of non-doped III-V compound semiconductor is formed on a lower layer (3) made of non-doped III-V compound semiconductor. Impurity source gas is fed through vapor phase diffusion using an organometallic vapor-phase epitaxy device to add an impurity to the upper layer (4,5). The vapor phase diffusion is continued with the feed of the impurity source gas stopped or with a feed amount of the impurity source gas lowered.

Abstract: An optical semiconductor device includes: an n-type semiconductor substrate; an n-type cladding layer provided on the n-type semiconductor substrate; an active layer of a semiconductor laser provided on the n-type cladding layer; a waveguide layer of a waveguide provided on the n-type cladding layer and having a side facing a side of the active layer; a p-type cladding layer provided on the active layer and the waveguide layer; and a middle layer provided between the side of the active layer and the side of the waveguide layer, provided between the n-type cladding layer and the waveguide layer, not provided on the active layer, and having a band gap greater than a band gap of the waveguide layer.

Abstract: A method of manufacturing a semiconductor device includes a step of forming a mesa portion including an active layer above a substrate, and an n-type layer above the active layer, a step of forming a current confinement portion on left and right of the mesa portion, the current confinement portion including a p-type current blocking layer, an n-type current blocking layer above the p-type current blocking layer, and an i-type or p-type current blocking layer above the n-type current blocking layer, and a p-type doping step of diffusing p-type impurities into the i-type or p-type current blocking layer, an upper portion of the n-type current blocking layer, and left and right portions of the n-type layer to change the upper portion of the n-type current blocking layer and the left and right portions of the n-type layer to p-type semiconductors.

Abstract: An optical semiconductor device includes: an n-type semiconductor substrate; an n-type cladding layer provided on the n-type semiconductor substrate; an active layer of a semiconductor laser provided on the n-type cladding layer; a waveguide layer of a waveguide provided on the n-type cladding layer and having a side facing a side of the active layer; a p-type cladding layer provided on the active layer and the waveguide layer; and a middle layer provided between the side of the active layer and the side of the waveguide layer, provided between the n-type cladding layer and the waveguide layer, not provided on the active layer, and having a band gap greater than a band gap of the waveguide layer.

Abstract: A method of manufacturing a semiconductor device includes a step of forming a mesa portion including an active layer above a substrate, and an n-type layer above the active layer, a step of forming a current confinement portion on left and right of the mesa portion, the current confinement portion including a p-type current blocking layer, an n-type current blocking layer above the p-type current blocking layer, and an i-type or p-type current blocking layer above the n-type current blocking layer, and a p-type doping step of diffusing p-type impurities into the i-type or p-type current blocking layer, an upper portion of the n-type current blocking layer, and left and right portions of the n-type layer to change the upper portion of the n-type current blocking layer and the left and right portions of the n-type layer to p-type semiconductors.

Abstract: An exhaust gas recirculation control device of an engine is provided. The device includes: an exhaust turbocharger having a turbine disposed in an exhaust passage and a compressor disposed in an intake passage; a low-pressure EGR passage connecting a part of the exhaust passage downstream of the turbine to a part of the intake passage upstream of the compressor; a low-pressure EGR valve disposed in the low-pressure EGR passage and for changing a cross-sectional area of the low-pressure EGR passage; an exhaust shutter valve disposed downstream of the connected part of the exhaust passage to the low-pressure EGR passage, and for changing a cross-sectional area of the exhaust passage; a valve control device for controlling openings of the low-pressure EGR valve and the exhaust shutter valve; and a gear range detector for detecting a gear range of a transmission of a vehicle in which the engine is installed.

Abstract: An exhaust gas recirculation control device of an engine is provided. The device includes: an exhaust turbocharger having a turbine disposed in an exhaust passage and a compressor disposed in an intake passage; an intercooler disposed in the intake passage downstream of the compressor; a low-pressure EGR passage connecting the exhaust passage downstream of the turbine to the intake passage upstream of the compressor; a low-pressure EGR valve disposed in the low-pressure EGR passage and for changing a cross-sectional area thereof; a high-pressure EGR passage connecting the exhaust passage upstream of the turbine to the intake passage downstream of the intercooler; a high-pressure EGR valve disposed in the high-pressure EGR passage and for changing a cross-sectional area thereof; a valve control device for controlling openings of the low-pressure and high-pressure EGR valves; and a gear range detector for detecting a gear range of a transmission.

Abstract: An image forming apparatus includes a toner image forming unit that forms and continuously transfers a toner image based on image data onto a transported sheet from the front to the rear in a sheet transport direction as the sheet is transported, a fixing unit positioned downstream of the toner image forming unit in the transport direction and that fixes the transferred toner image onto the sheet, an image determining unit that determines whether the formed toner image is a scattering toner image that causes toner scattering during the transfer, and a speed controlling unit that controls, when it is determined that the toner image is a scattering toner image, a transport speed of the sheet and a transfer speed of the toner image to the sheet such that the speeds are slower than those when it is determined that the toner image is not a scattering toner image.